Optical characterization of multilayer stacks used as phase-change media of optical disk data storage

Rongguang Liang; Chubing Peng; Kenichi Nagata; Kelly Daly-Flynn; Masud Mansuripur

doi:10.1364/AO.41.000370

Applied Optics
Vol. 41,
Issue 2,
pp. 370-378
(2002)
•https://doi.org/10.1364/AO.41.000370

Optical characterization of multilayer stacks used as phase-change media of optical disk data storage

Rongguang Liang, Chubing Peng, Kenichi Nagata, Kelly Daly-Flynn, and Masud Mansuripur

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Rongguang Liang, Chubing Peng, Kenichi Nagata, Kelly Daly-Flynn, and Masud Mansuripur, "Optical characterization of multilayer stacks used as phase-change media of optical disk data storage," Appl. Opt. 41, 370-378 (2002)

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Abstract

We report results of measurements of the optical constants of the dielectric layer (ZnS-SiO₂), reflecting layer (aluminum–chromium alloy), and phase-change layer (GeSbTe, AgInSbTe) used as the media of phase-change optical recording. The refractive index n and the absorption coefficient k of these materials vary to some extent with the film thickness and with the film deposition environment. We report the observed variations of optical constants among samples of differing structure and among samples fabricated in different laboratories.

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Sample	Structure	Surface Incident	Substrate Incident
GS2160	ZnS-SiO₂ Substrate	n = 2.093, t = 60 nm (60.6)a	n = 2.09, t = 61.24 nm
GS2161	GST Substrate	n+ ik = 3.811+ i 1.629, t = 13.47 nm (13.6)	n+ ik = 3.798+ i 1.510, t = 14.25 nm
GS2162	Aluminum Substrate	n+ ik = 1.778+ i 6.348, t = 34.77 nm (38.4)	n+ ik = 1.982+ i 6.829, t = 38.76 nm
GS2163	ZnS-SiO₂	n ₁ = 2.1,b t ₁ = 59.44 nm (60.6)	n ₁ = 2.101, t ₁ = 57.23 nm
	GST (amorphous)	n ₂+ ik ₂ = 4.382+ i 2.107, t ₂ = 11.56 nm (13.6)	n ₂+ ik ₂ = 4.091+ i 1.820, t ₂ = 14.39 nm
	ZnS-SiO₂ Substrate	n ₃ = 2.09, t ₃ = 29.92 nm (30.3)	n ₃ = 2.108, t ₃ = 29.72 nm
	ZnS-SiO₂	n ₁ = 2.090, t ₁ = 57.53 nm (60.6)	n ₁ = 2.103, t ₁ = 59.02 nm
	GST (crystalline)	n ₂+ ik ₂ = 4.05+ i 3.851, t ₂ = 14.22 nm (13.6)	n ₂+ ik ₂ = 4.109+ i 3.772, t ₂ = 14.53 nm
	ZnS-SiO₂ Substrate	n ₃ = 2.101, t ₃ = 28.56 nm (30.3)	n ₃ = 2.10, t ₃ = 29.11 nm
GS2164	Aluminum		n ₁ = 2.111, t ₁ = 60.63 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.534+ i 1.936, t ₂ = 11.68 nm (13.6)
	GST (amorphous)		n ₃ = 2.09, t ₃ = 30.2 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 2.257+ i 6.907, t ₄ = 33.74 nm (38.4)
	Aluminum		n ₁ = 2.10, t ₁ = 60.51 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.320+ i 3.946, t ₂ = 11.94 nm (13.6)
	GST (crystalline)		n ₃ = 2.093, t ₃ = 30.41 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.952+ i 6.926, t ₄ = 35.44 nm (38.4)
GS2165	ZnS-SiO₂	n ₁+ ik ₁ = 1.989+ i 6.820, t ₁ = 38.76 nm (38.4)
	GST (amorphous)	n ₂ = 2.092, t ₂ = 34.69 nm (30.3)
	ZnS-SiO₂	n ₃+ ik ₃ = 4.175+ i 1.901, t ₃ = 13.42 nm (13.6)
	Aluminum Substrate	n ₄ = 2.099, t ₄ = 59.43 nm (60.6)
	ZnS-SiO₂	n ₁+ ik ₁ = 1.957+ i 6.792, t ₁ = 36.42 nm (38.4)
	GST (crystalline)	n ₂ = 2.099, t ₂ = 28.5 nm (30.3)
	ZnS-SiO₂	n ₃+ ik ₃ = 3.891+ i 3.504, t ₃ = 16.49 nm (13.6)
	Aluminum Substrate	n ₄ = 2.099, t ₄ = 58.71 nm (60.6)
GS2168	Aluminum		n ₁ = 2.111, t ₁ = 59.16 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.337+ i 1.871, t ₂ = 12.82 nm (13.6)
	GST (amorphous)		n ₃ = 2.111, t ₃ = 29.95 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.977+ i 6.815, t ₄ = 37.91 nm (38.4)
	Aluminum		n ₁ = 2.108, t ₁ = 57.6 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 3.651+ i 3.320, t ₂ = 17.26 nm (13.6)
	GST (crystalline)		n ₃ = 2.089, t ₃ = 29.11 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.807+ i 6.843, t ₄ = 28.33 nm (38.4)
GS2169	Aluminum Substrate	n+ ik = 1.896+ i 6.264, t = 18.98 nm (18.4)	n+ ik = 1.949 + i 6.711, t = 17.32 nm (18.4)

Sample	Structure	Surface Incident	Substrate Incident
O2395	Dielectric Substrate	n = 2.127, t = 38.52 nm (40)a	n = 2.120, t = 39.46 nm (40)
O2396	GST (amorphous) Substrate	n+ ik = 4.087+ i 1.928, t = 36.56 nm (40)	n+ ik = 4.181+ i 1.842, t = 37.9 nm (40)
O2397	Aluminum Substrate	n+ ik = 1.471+ i 6.54, t = 38.01 nm (40)	n+ ik = 1.571+ i 7.022, t = 38.55 nm (40)
O2400	GST (amorphous)	n ₁ = 2.174,b t ₁ = 140.5 nm (150)	n ₁ = 2.112, t ₁ = 148.3 nm (150)
	Dielectric Substrate	n ₂+ ik ₂ = 4.16+ i 1.783, t ₂ = 24.79 nm (25)	n ₂+ ik ₂ = 4.135+ i 1.774, t ₂ = 24.85 nm (25)
O2401	Dielectric	n ₁ = 2.157, t ₁ = 149.6 nm (150)	n ₁ = 2.149, t ₁ = 151.6 nm (150)
	GST (amorphous)	n ₂+ ik ₂ = 4.177+ i 1.819, t ₂ = 25.85 nm (25)	n ₂+ ik ₂ = 4.333+ i 2.052, t ₂ = 22.14 nm (25)
	Dielectric Substrate	n ₃ = 2.144, t ₃ = 37.49 nm (36)	n ₃ = 2.140, t ₃ = 40.33 nm (36)
O2402	Aluminum		n ₁ = 2.151, t ₁ = 146.87 nm (150)
	Dielectric		n ₂+ ik ₂ = 4.314+ i 1.951, t ₂ = 24.93 nm (25)
	GST (amorphous)		n ₃ = 2.149, t ₃ = 33.59 nm (36)
	Dielectric Substrate		n ₄+ ik ₄ = 1.531+ i 6.864, t ₄ = 57.88 nm (60)
O2404	AIST	n ₁ = 2.127, t ₁ = 59.77 nm (60)	n ₁ = 2.123, t ₁ = 59.45 nm (60)
	Dielectric Substrate	n ₂+ ik ₂ = 4.246+ i 2.567, t ₂ = 19.75 nm (21)	n ₂+ ik ₂ = 4.271+ i 2.444, t ₂ = 20.65 nm (21)
O2405	Dielectric	n ₁ = 2.122, t ₁ = 59.74 nm (60)	n ₁ = 2.135, t ₁ = 59.01 nm (60)
	AIST	n ₂+ ik ₂ = 4.331+ i 2.543, t ₂ = 20.24 nm (21)	n ₂+ ik ₂ = 4.354+ i 2.556, t ₂ = 20.1 nm (21)
	Dielectric Substrate	n ₃ = 2.123, t ₃ = 29.46 nm (28)	n ₃ = 2.150, t ₃ = 29.40 nm (28)
O2406	Aluminum		n ₁ = 2.170, t ₁ = 60.02 nm (60)
	Dielectric		n ₂+ ik ₂ = 4.170+ i 2.302, t ₂ = 23.97 nm (21)
	AIST		n ₃ = 2.137, t ₃ = 30.64 nm (28)
	Dielectric Substrate		n ₄+ ik ₄ = 1.560+ i 6.868, t ₄ = 137.36 nm (150)
O2412	Substrate AIST	n+ ik = 4.224+ i 2.527, t = 39.07 nm (40)	n+ ik = 4.507+ i 2.505, t = 38.71 nm (40)

Sample Set	Material	Refractive Index n	σ_n	Absorption Coefficient k	σ_k
1	Dielectric layer (nominal t = 30.3 nm)	2.097	0.008	—	—
	Dielectric layer (nominal t = 60.6 nm)	2.100	0.007	—	—
	GST (amorphous)	4.161	0.282	1.825	0.199
	GST (crystalline)	4.004	0.250	3.679	0.259
	Aluminum	1.954	0.129	6.752	0.197
2	Dielectric layer	2.139	0.018	—	—
	GST (amorphous)	4.198	0.091	1.878	0.102
	AIST	4.300	0.110	2.492	0.093
	Aluminum	1.533	0.045	6.824	0.203

Sample	Structure	Surface Incident	Substrate Incident
GS2160	ZnS-SiO₂ Substrate	n = 2.093, t = 60 nm (60.6)a	n = 2.09, t = 61.24 nm
GS2161	GST Substrate	n+ ik = 3.811+ i 1.629, t = 13.47 nm (13.6)	n+ ik = 3.798+ i 1.510, t = 14.25 nm
GS2162	Aluminum Substrate	n+ ik = 1.778+ i 6.348, t = 34.77 nm (38.4)	n+ ik = 1.982+ i 6.829, t = 38.76 nm
GS2163	ZnS-SiO₂	n ₁ = 2.1,b t ₁ = 59.44 nm (60.6)	n ₁ = 2.101, t ₁ = 57.23 nm
	GST (amorphous)	n ₂+ ik ₂ = 4.382+ i 2.107, t ₂ = 11.56 nm (13.6)	n ₂+ ik ₂ = 4.091+ i 1.820, t ₂ = 14.39 nm
	ZnS-SiO₂ Substrate	n ₃ = 2.09, t ₃ = 29.92 nm (30.3)	n ₃ = 2.108, t ₃ = 29.72 nm
	ZnS-SiO₂	n ₁ = 2.090, t ₁ = 57.53 nm (60.6)	n ₁ = 2.103, t ₁ = 59.02 nm
	GST (crystalline)	n ₂+ ik ₂ = 4.05+ i 3.851, t ₂ = 14.22 nm (13.6)	n ₂+ ik ₂ = 4.109+ i 3.772, t ₂ = 14.53 nm
	ZnS-SiO₂ Substrate	n ₃ = 2.101, t ₃ = 28.56 nm (30.3)	n ₃ = 2.10, t ₃ = 29.11 nm
GS2164	Aluminum		n ₁ = 2.111, t ₁ = 60.63 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.534+ i 1.936, t ₂ = 11.68 nm (13.6)
	GST (amorphous)		n ₃ = 2.09, t ₃ = 30.2 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 2.257+ i 6.907, t ₄ = 33.74 nm (38.4)
	Aluminum		n ₁ = 2.10, t ₁ = 60.51 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.320+ i 3.946, t ₂ = 11.94 nm (13.6)
	GST (crystalline)		n ₃ = 2.093, t ₃ = 30.41 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.952+ i 6.926, t ₄ = 35.44 nm (38.4)
GS2165	ZnS-SiO₂	n ₁+ ik ₁ = 1.989+ i 6.820, t ₁ = 38.76 nm (38.4)
	GST (amorphous)	n ₂ = 2.092, t ₂ = 34.69 nm (30.3)
	ZnS-SiO₂	n ₃+ ik ₃ = 4.175+ i 1.901, t ₃ = 13.42 nm (13.6)
	Aluminum Substrate	n ₄ = 2.099, t ₄ = 59.43 nm (60.6)
	ZnS-SiO₂	n ₁+ ik ₁ = 1.957+ i 6.792, t ₁ = 36.42 nm (38.4)
	GST (crystalline)	n ₂ = 2.099, t ₂ = 28.5 nm (30.3)
	ZnS-SiO₂	n ₃+ ik ₃ = 3.891+ i 3.504, t ₃ = 16.49 nm (13.6)
	Aluminum Substrate	n ₄ = 2.099, t ₄ = 58.71 nm (60.6)
GS2168	Aluminum		n ₁ = 2.111, t ₁ = 59.16 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 4.337+ i 1.871, t ₂ = 12.82 nm (13.6)
	GST (amorphous)		n ₃ = 2.111, t ₃ = 29.95 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.977+ i 6.815, t ₄ = 37.91 nm (38.4)
	Aluminum		n ₁ = 2.108, t ₁ = 57.6 nm (60.6)
	ZnS-SiO₂		n ₂+ ik ₂ = 3.651+ i 3.320, t ₂ = 17.26 nm (13.6)
	GST (crystalline)		n ₃ = 2.089, t ₃ = 29.11 nm (30.3)
	ZnS-SiO₂ Substrate		n ₄ + ik ₄ = 1.807+ i 6.843, t ₄ = 28.33 nm (38.4)
GS2169	Aluminum Substrate	n+ ik = 1.896+ i 6.264, t = 18.98 nm (18.4)	n+ ik = 1.949 + i 6.711, t = 17.32 nm (18.4)

Sample	Structure	Surface Incident	Substrate Incident
O2395	Dielectric Substrate	n = 2.127, t = 38.52 nm (40)a	n = 2.120, t = 39.46 nm (40)
O2396	GST (amorphous) Substrate	n+ ik = 4.087+ i 1.928, t = 36.56 nm (40)	n+ ik = 4.181+ i 1.842, t = 37.9 nm (40)
O2397	Aluminum Substrate	n+ ik = 1.471+ i 6.54, t = 38.01 nm (40)	n+ ik = 1.571+ i 7.022, t = 38.55 nm (40)
O2400	GST (amorphous)	n ₁ = 2.174,b t ₁ = 140.5 nm (150)	n ₁ = 2.112, t ₁ = 148.3 nm (150)
	Dielectric Substrate	n ₂+ ik ₂ = 4.16+ i 1.783, t ₂ = 24.79 nm (25)	n ₂+ ik ₂ = 4.135+ i 1.774, t ₂ = 24.85 nm (25)
O2401	Dielectric	n ₁ = 2.157, t ₁ = 149.6 nm (150)	n ₁ = 2.149, t ₁ = 151.6 nm (150)
	GST (amorphous)	n ₂+ ik ₂ = 4.177+ i 1.819, t ₂ = 25.85 nm (25)	n ₂+ ik ₂ = 4.333+ i 2.052, t ₂ = 22.14 nm (25)
	Dielectric Substrate	n ₃ = 2.144, t ₃ = 37.49 nm (36)	n ₃ = 2.140, t ₃ = 40.33 nm (36)
O2402	Aluminum		n ₁ = 2.151, t ₁ = 146.87 nm (150)
	Dielectric		n ₂+ ik ₂ = 4.314+ i 1.951, t ₂ = 24.93 nm (25)
	GST (amorphous)		n ₃ = 2.149, t ₃ = 33.59 nm (36)
	Dielectric Substrate		n ₄+ ik ₄ = 1.531+ i 6.864, t ₄ = 57.88 nm (60)
O2404	AIST	n ₁ = 2.127, t ₁ = 59.77 nm (60)	n ₁ = 2.123, t ₁ = 59.45 nm (60)
	Dielectric Substrate	n ₂+ ik ₂ = 4.246+ i 2.567, t ₂ = 19.75 nm (21)	n ₂+ ik ₂ = 4.271+ i 2.444, t ₂ = 20.65 nm (21)
O2405	Dielectric	n ₁ = 2.122, t ₁ = 59.74 nm (60)	n ₁ = 2.135, t ₁ = 59.01 nm (60)
	AIST	n ₂+ ik ₂ = 4.331+ i 2.543, t ₂ = 20.24 nm (21)	n ₂+ ik ₂ = 4.354+ i 2.556, t ₂ = 20.1 nm (21)
	Dielectric Substrate	n ₃ = 2.123, t ₃ = 29.46 nm (28)	n ₃ = 2.150, t ₃ = 29.40 nm (28)
O2406	Aluminum		n ₁ = 2.170, t ₁ = 60.02 nm (60)
	Dielectric		n ₂+ ik ₂ = 4.170+ i 2.302, t ₂ = 23.97 nm (21)
	AIST		n ₃ = 2.137, t ₃ = 30.64 nm (28)
	Dielectric Substrate		n ₄+ ik ₄ = 1.560+ i 6.868, t ₄ = 137.36 nm (150)
O2412	Substrate AIST	n+ ik = 4.224+ i 2.527, t = 39.07 nm (40)	n+ ik = 4.507+ i 2.505, t = 38.71 nm (40)

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Applied Optics