Abstract

The optical response of coherent thin-film multilayers is often represented with Fresnel coefficients in a 2 × 2 matrix configuration. Here the usual transfer matrix was modified to a generic form, with the ability to use the absolute squares of the Fresnel coefficients, so as to include incoherent (thick layers) and partially coherent (rough surface or interfaces) reflection and transmission. The method is integrated by use of models for refractive-index depth profiling. The utility of the method is illustrated with various multilayer structures formed by ion implantation into Si, including buried insulating and conducting layers, and multilayers with a thick incoherent layer in an arbitrary position.

© 2002 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  32. D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
    [CrossRef]
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2001 (2)

R. Z. Vitlina, G. I. Surdutovich, “A ‘blurred film’ model in polarized light reflectometry for characterization of thick films and surface layers,” J. Phys. D. Appl. Phys. 34, 2593–2598 (2001).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

2000 (1)

N. Hatzopoulos, W. Skorupa, D. Siapkas, “Double Simox structures formed by sequential high energy oxygen implantation into silicon,” J. Electrochem. Soc. 147, 354–362 (2000).
[CrossRef]

1997 (1)

1996 (3)

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Optical investigation of structures formed by 2MeV oxygen implantation into silicon,” Thin Solid Films 289, 90–94 (1996).
[CrossRef]

1995 (4)

C. L. Mitsas, D. I. Siapkas, “Generalized matrix method for analysis of coherent and incoherent reflectance and transmittance of multiplayer structures with rough surfaces, interfaces, and finite substrates,” Appl. Opt. 34, 1678–1683 (1995).
[CrossRef] [PubMed]

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon,” J. Appl. Phys. 77, 577–586 (1995).
[CrossRef]

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

1993 (1)

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

1991 (1)

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

1990 (1)

A. K. Robinson, K. J. Reeson, P. L. F. Hemment, “Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation,” J. Appl. Phys. 68, 4340–4342 (1990).
[CrossRef]

1989 (1)

1988 (1)

1985 (1)

J. Pawlikovski, “Comments on the determination of the absorption coefficient of thin semiconductor films,” Thin Solid Films 127, 29–38 (1985).
[CrossRef]

1983 (1)

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

1981 (1)

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

1977 (1)

J. Szczyrbowski, A. Czapla, “Optical absorption in d.c. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

1976 (1)

W. Tennant, J. Cape, “Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity,” Phys. Rev. B 13, 2540–2547 (1976).
[CrossRef]

1972 (1)

I. Fillinski, “The effects of sample imperfections on optical spectra,” Phys. Status Solidi 49, 577–588 (1972).
[CrossRef]

1971 (1)

C. J. Gabriel, A. Nedoluha, “Transmittance and reflectance of systems of thin and thick layers,” Opt. Acta 18, 415–423 (1971).
[CrossRef]

1968 (1)

A. M. Dioffo, “Étude théorique des caractéristiques optiques d’un système de lames diélectriques,” Rev. Opt. 47, 49–68 (1968).

1961 (1)

Aspar, B.

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

Bennett, H. E.

Bergquist, M.

Born, M.

M. Born, E. Wolf, Principles of Optics (MacMillan, New York, 1964), p. 254.

Burkey, B. C.

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

Cape, J.

W. Tennant, J. Cape, “Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity,” Phys. Rev. B 13, 2540–2547 (1976).
[CrossRef]

Carcia, A.

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

Chenglu, L.

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Czapla, A.

J. Szczyrbowski, A. Czapla, “Optical absorption in d.c. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

Dioffo, A. M.

A. M. Dioffo, “Étude théorique des caractéristiques optiques d’un système de lames diélectriques,” Rev. Opt. 47, 49–68 (1968).

Dobrowolski, J.

Fillinski, I.

I. Fillinski, “The effects of sample imperfections on optical spectra,” Phys. Status Solidi 49, 577–588 (1972).
[CrossRef]

Fredrickson, J. E.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

Gabriel, C. J.

C. J. Gabriel, A. Nedoluha, “Transmittance and reflectance of systems of thin and thick layers,” Opt. Acta 18, 415–423 (1971).
[CrossRef]

Hatzopoulos, N.

N. Hatzopoulos, W. Skorupa, D. Siapkas, “Double Simox structures formed by sequential high energy oxygen implantation into silicon,” J. Electrochem. Soc. 147, 354–362 (2000).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Optical investigation of structures formed by 2MeV oxygen implantation into silicon,” Thin Solid Films 289, 90–94 (1996).
[CrossRef]

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon,” J. Appl. Phys. 77, 577–586 (1995).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

Heavens, O. S.

O. S. Heavens, Optical Properties of Thin Films (Dover, New York, 1965), p. 69.

Hemment, P. L. F.

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Optical investigation of structures formed by 2MeV oxygen implantation into silicon,” Thin Solid Films 289, 90–94 (1996).
[CrossRef]

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon,” J. Appl. Phys. 77, 577–586 (1995).
[CrossRef]

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

A. K. Robinson, K. J. Reeson, P. L. F. Hemment, “Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation,” J. Appl. Phys. 68, 4340–4342 (1990).
[CrossRef]

Hubler, G. K.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

Katsidis, C. C.

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, in Proceedings of NATO ASI on Application of Particle and Laser Beams in Materials Technology, P. Misaelides, ed. (Kluwer Academic, Dordrecht, 1995), p. 603–612.

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

Knittl, Z.

Z. Knittl, Optics of Thin Films (Wiley, London, 1976), p. 41.

Krishnan, K.

K. Krishnan, P. J. Stout, M. Watanabe, Practical Fourier Transform Infrared Spectroscopy (Academic, New York, 1990), p. 294.

Kushev, D. B.

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

Lelidis, I.

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

Lubberts, G.

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

Malmberg, P. R.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

Margail, J.

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

Mitsas, C. L.

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

C. L. Mitsas, D. I. Siapkas, “Generalized matrix method for analysis of coherent and incoherent reflectance and transmittance of multiplayer structures with rough surfaces, interfaces, and finite substrates,” Appl. Opt. 34, 1678–1683 (1995).
[CrossRef] [PubMed]

Moser, F.

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

Nedoluha, A.

C. J. Gabriel, A. Nedoluha, “Transmittance and reflectance of systems of thin and thick layers,” Opt. Acta 18, 415–423 (1971).
[CrossRef]

Nejim, A.

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Panknin, D.

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

Pawlikovski, J.

J. Pawlikovski, “Comments on the determination of the absorption coefficient of thin semiconductor films,” Thin Solid Films 127, 29–38 (1985).
[CrossRef]

Porteus, J. O.

Reeson, K. J.

A. K. Robinson, K. J. Reeson, P. L. F. Hemment, “Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation,” J. Appl. Phys. 68, 4340–4342 (1990).
[CrossRef]

Ribbing, C.

Robinson, A. K.

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

A. K. Robinson, K. J. Reeson, P. L. F. Hemment, “Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation,” J. Appl. Phys. 68, 4340–4342 (1990).
[CrossRef]

Roos, A.

Shichang, Z.

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Siapkas, D.

N. Hatzopoulos, W. Skorupa, D. Siapkas, “Double Simox structures formed by sequential high energy oxygen implantation into silicon,” J. Electrochem. Soc. 147, 354–362 (2000).
[CrossRef]

Siapkas, D. I.

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Optical investigation of structures formed by 2MeV oxygen implantation into silicon,” Thin Solid Films 289, 90–94 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon,” J. Appl. Phys. 77, 577–586 (1995).
[CrossRef]

C. L. Mitsas, D. I. Siapkas, “Generalized matrix method for analysis of coherent and incoherent reflectance and transmittance of multiplayer structures with rough surfaces, interfaces, and finite substrates,” Appl. Opt. 34, 1678–1683 (1995).
[CrossRef] [PubMed]

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, in Proceedings of NATO ASI on Application of Particle and Laser Beams in Materials Technology, P. Misaelides, ed. (Kluwer Academic, Dordrecht, 1995), p. 603–612.

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

Siapkas, J.

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

Skorupa, W.

N. Hatzopoulos, W. Skorupa, D. Siapkas, “Double Simox structures formed by sequential high energy oxygen implantation into silicon,” J. Electrochem. Soc. 147, 354–362 (2000).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

Spitzer, W. G.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

Stoemenos, J.

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

Stout, P. J.

K. Krishnan, P. J. Stout, M. Watanabe, Practical Fourier Transform Infrared Spectroscopy (Academic, New York, 1990), p. 294.

Sullivan, B.

Surdutovich, G. I.

R. Z. Vitlina, G. I. Surdutovich, “A ‘blurred film’ model in polarized light reflectometry for characterization of thick films and surface layers,” J. Phys. D. Appl. Phys. 34, 2593–2598 (2001).
[CrossRef]

Swanepoel, R.

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

Szczyrbowski, J.

J. Szczyrbowski, A. Czapla, “Optical absorption in d.c. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

Tennant, W.

W. Tennant, J. Cape, “Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity,” Phys. Rev. B 13, 2540–2547 (1976).
[CrossRef]

Tikhonravov, A.

Trabka, E. A.

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

Trubetskov, M.

Vitlina, R. Z.

R. Z. Vitlina, G. I. Surdutovich, “A ‘blurred film’ model in polarized light reflectometry for characterization of thick films and surface layers,” J. Phys. D. Appl. Phys. 34, 2593–2598 (2001).
[CrossRef]

Waddell, C. N.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

Watanabe, M.

K. Krishnan, P. J. Stout, M. Watanabe, Practical Fourier Transform Infrared Spectroscopy (Academic, New York, 1990), p. 294.

Wenhua, Z.

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Wolf, E.

M. Born, E. Wolf, Principles of Optics (MacMillan, New York, 1964), p. 254.

Yeh, P.

P. Yeh, Optical Waves in Layered Media (Wiley, New York, 1988), p. 102.

Zheleva, N. N.

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

Zorba, T.

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

Zuoyu, S.

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Appl. Opt. (4)

Infrared Phys. (1)

D. I. Siapkas, D. B. Kushev, N. N. Zheleva, J. Siapkas, I. Lelidis, “Optical constants of tin-telluride determined from infrared interference spectra,” Infrared Phys. 31, 425–433 (1991).
[CrossRef]

J. Appl. Phys. (4)

A. K. Robinson, K. J. Reeson, P. L. F. Hemment, “Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation,” J. Appl. Phys. 68, 4340–4342 (1990).
[CrossRef]

G. Lubberts, B. C. Burkey, F. Moser, E. A. Trabka, “Optical properties of phosphorous-doped polycrystalline silicon layers,” J. Appl. Phys. 52, 6870–6878 (1981).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, W. Skorupa, “Formation and characterization of novel Si/SiO2 multilayer structures by oxygen ion implantation into silicon,” J. Appl. Phys. 80, 4960–4970 (1996).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon,” J. Appl. Phys. 77, 577–586 (1995).
[CrossRef]

J. Electrochem. Soc. (4)

D. I. Siapkas, N. Hatzopoulos, C. C. Katsidis, T. Zorba, C. L. Mitsas, P. L. F. Hemment, “Structural and compositional characterization of high energy separation by implantation of oxygen structures using infrared spectroscopy,” J. Electrochem. Soc. 143, 3019–3032 (1996).
[CrossRef]

J. Stoemenos, A. Carcia, B. Aspar, J. Margail, “Silicon on insulator obtained by high dose oxygen implantation, microstructure, and formation mechanism,” J. Electrochem. Soc. 142, 1248–1259 (1995).
[CrossRef]

N. Hatzopoulos, W. Skorupa, D. Siapkas, “Double Simox structures formed by sequential high energy oxygen implantation into silicon,” J. Electrochem. Soc. 147, 354–362 (2000).
[CrossRef]

C. C. Katsidis, D. I. Siapkas, A. K. Robinson, P. L. F. Hemment, “Formation of conducting and insulating layered structures in Si by ion implantation: process control using FTIR spectroscopy,” J. Electrochem. Soc. 148, G704–G716 (2001).
[CrossRef]

J. Opt. Soc. Am. (1)

J. Phys. D. Appl. Phys. (1)

R. Z. Vitlina, G. I. Surdutovich, “A ‘blurred film’ model in polarized light reflectometry for characterization of thick films and surface layers,” J. Phys. D. Appl. Phys. 34, 2593–2598 (2001).
[CrossRef]

J. Phys. E (1)

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

Microelectron. Eng. (1)

C. C. Katsidis, D. I. Siapkas, D. Panknin, N. Hatzopoulos, W. Skorupa, “Optical characterization of doped Simox structures using FTIR spectroscopy,” Microelectron. Eng. 28, 439–442 (1995).
[CrossRef]

Nucl. Instrum. Meth. B (1)

Z. Wenhua, L. Chenglu, S. Zuoyu, Z. Shichang, P. L. F. Hemment, A. Nejim, “Electrical characterization of thin film Simox structures,” Nucl. Instrum. Meth. B 74, 218–221 (1993).
[CrossRef]

Opt. Acta (1)

C. J. Gabriel, A. Nedoluha, “Transmittance and reflectance of systems of thin and thick layers,” Opt. Acta 18, 415–423 (1971).
[CrossRef]

Phys. Rev. B (1)

W. Tennant, J. Cape, “Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity,” Phys. Rev. B 13, 2540–2547 (1976).
[CrossRef]

Phys. Status Solidi (1)

I. Fillinski, “The effects of sample imperfections on optical spectra,” Phys. Status Solidi 49, 577–588 (1972).
[CrossRef]

Rev. Opt. (1)

A. M. Dioffo, “Étude théorique des caractéristiques optiques d’un système de lames diélectriques,” Rev. Opt. 47, 49–68 (1968).

Thin Solid Films (3)

J. Szczyrbowski, A. Czapla, “Optical absorption in d.c. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

J. Pawlikovski, “Comments on the determination of the absorption coefficient of thin semiconductor films,” Thin Solid Films 127, 29–38 (1985).
[CrossRef]

N. Hatzopoulos, D. I. Siapkas, P. L. F. Hemment, “Optical investigation of structures formed by 2MeV oxygen implantation into silicon,” Thin Solid Films 289, 90–94 (1996).
[CrossRef]

Other (8)

C. C. Katsidis, D. I. Siapkas, W. Skorupa, N. Hatzopoulos, D. Panknin, Proceedings of the 10th International Conference on Ion Implantation Technology (Elsevier, Amsterdam, 1995), p. 959–962.

C. C. Katsidis, D. I. Siapkas, in Proceedings of NATO ASI on Application of Particle and Laser Beams in Materials Technology, P. Misaelides, ed. (Kluwer Academic, Dordrecht, 1995), p. 603–612.

M. Born, E. Wolf, Principles of Optics (MacMillan, New York, 1964), p. 254.

O. S. Heavens, Optical Properties of Thin Films (Dover, New York, 1965), p. 69.

P. Yeh, Optical Waves in Layered Media (Wiley, New York, 1988), p. 102.

Z. Knittl, Optics of Thin Films (Wiley, London, 1976), p. 41.

G. K. Hubler, P. R. Malmberg, C. N. Waddell, W. G. Spitzer, J. E. Fredrickson, in Ion Implantation for Materials Processing, F. A. Smidt, ed. (Noyes Data, Park Ridge, N.J., 1983), p. 195–218.

K. Krishnan, P. J. Stout, M. Watanabe, Practical Fourier Transform Infrared Spectroscopy (Academic, New York, 1990), p. 294.

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