Abstract

Recent progress in ellipsometry instrumentation permits precise measurement and characterization of optical coating materials in the deep-UV wavelength range. Dielectric coating materials exhibit their first electronic interband transition in this spectral range. The Tauc-Lorentz model is a powerful tool with which to parameterize interband absorption above the band edge. The application of this model for the parameterization of the optical absorption of TiO2, Ta2O5, HfO2, Al2O3, and LaF3 thin-film materials is described.

© 2002 Optical Society of America

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  1. J. A. Dobrowolski, F. C. Ho, A. Waldorf, “Determination of optical constants of thin film coating materials based on inverse syntesis,” Appl. Opt. 22, 3191–3200 (1983).
    [CrossRef]
  2. F. Urbach, “The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Phys. Rev. 92, 1324 (1953).
    [CrossRef]
  3. T. Koslowski, “The electronic structure of molten salts: a numerical approach,” Ber. Bunsenges. Phys. Chem. 100, 95–100 (1996).
    [CrossRef]
  4. See, e.g., N. F. Mott, E. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon, Oxford, 1979).
  5. J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
    [CrossRef]
  6. A. R. Forouhi, I. Bloomer, “Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
    [CrossRef]
  7. G. E. Jellison, F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371–373 (1996).
    [CrossRef]
  8. G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
    [CrossRef]
  9. G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
    [CrossRef]
  10. J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
    [CrossRef]
  11. K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
    [CrossRef]
  12. S. Lee, J. Hong, “Comparison of various parameterization models for optical functions of amorphous materials: application for sputtered titanium dioxide thin films,” Jpn. J. Appl. Phys. 39, 241–244 (2000).
    [CrossRef]
  13. N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
    [CrossRef]
  14. Sopra S. A., Bois Colombes, France.
  15. J. A. Woollam, Inc., Lincoln, Nebraska.
  16. A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
    [CrossRef]
  17. H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
    [CrossRef]
  18. S. Y. Kim, “Simultaneous determination of refractive index, extinction coefficient, and void distribution of titanium dioxide thin films by optical methods,” Appl. Opt. 35, 6703–6707 (1996).
    [CrossRef] [PubMed]
  19. D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
    [CrossRef]
  20. D. Mardare, P. Hones, “Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements,” Mater. Sci. Eng. B 68, 42–47 (1999).
    [CrossRef]
  21. I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).
  22. F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
    [CrossRef]
  23. J.-Y. Zhang, I. W. Boyd, “Ultrathin high-quality tantalum pentoxide films grown by photoinduced chemical vapor deposition,” Appl. Phys. Lett. 77, 3574–3576 (2000).
    [CrossRef]
  24. T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
    [CrossRef]
  25. R. W. Collins, K. Vedam, “Ellipsometers,” in Encyclopedia of Applied Physics (VCH Publishers, Deerfield, Fla., 1993), Vol. 6.

2001 (1)

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

2000 (6)

S. Lee, J. Hong, “Comparison of various parameterization models for optical functions of amorphous materials: application for sputtered titanium dioxide thin films,” Jpn. J. Appl. Phys. 39, 241–244 (2000).
[CrossRef]

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
[CrossRef]

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

J.-Y. Zhang, I. W. Boyd, “Ultrathin high-quality tantalum pentoxide films grown by photoinduced chemical vapor deposition,” Appl. Phys. Lett. 77, 3574–3576 (2000).
[CrossRef]

T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
[CrossRef]

1999 (4)

D. Mardare, P. Hones, “Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements,” Mater. Sci. Eng. B 68, 42–47 (1999).
[CrossRef]

I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
[CrossRef]

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

1998 (2)

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

1997 (1)

F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
[CrossRef]

1996 (3)

S. Y. Kim, “Simultaneous determination of refractive index, extinction coefficient, and void distribution of titanium dioxide thin films by optical methods,” Appl. Opt. 35, 6703–6707 (1996).
[CrossRef] [PubMed]

G. E. Jellison, F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371–373 (1996).
[CrossRef]

T. Koslowski, “The electronic structure of molten salts: a numerical approach,” Ber. Bunsenges. Phys. Chem. 100, 95–100 (1996).
[CrossRef]

1986 (1)

A. R. Forouhi, I. Bloomer, “Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

1983 (1)

1966 (1)

J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
[CrossRef]

1953 (1)

F. Urbach, “The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Phys. Rev. 92, 1324 (1953).
[CrossRef]

Alers, G. B.

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Aoyama, M.

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

Aspnes, D. E.

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

Bendavid, A.

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
[CrossRef]

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

Bertran, E.

I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).

Bhattacharyya, D.

D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
[CrossRef]

Bloomer, I.

A. R. Forouhi, I. Bloomer, “Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Boyd, I. W.

J.-Y. Zhang, I. W. Boyd, “Ultrathin high-quality tantalum pentoxide films grown by photoinduced chemical vapor deposition,” Appl. Phys. Lett. 77, 3574–3576 (2000).
[CrossRef]

Caughman, J. B.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Cho, Y. J.

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Chu, H.

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

Collins, R. W.

R. W. Collins, K. Vedam, “Ellipsometers,” in Encyclopedia of Applied Physics (VCH Publishers, Deerfield, Fla., 1993), Vol. 6.

Das, N. C.

D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
[CrossRef]

Davis, E. A.

See, e.g., N. F. Mott, E. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon, Oxford, 1979).

Dobrowolski, J. A.

Doshi, P.

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

Eres, G.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Forouhi, A. R.

A. R. Forouhi, I. Bloomer, “Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Geohegan, D. B.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Ghodsi, F. E.

F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
[CrossRef]

Grigorovici, R.

J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
[CrossRef]

Ho, F. C.

Honda, S.

T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
[CrossRef]

Hones, P.

D. Mardare, P. Hones, “Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements,” Mater. Sci. Eng. B 68, 42–47 (1999).
[CrossRef]

Hong, J.

S. Lee, J. Hong, “Comparison of various parameterization models for optical functions of amorphous materials: application for sputtered titanium dioxide thin films,” Jpn. J. Appl. Phys. 39, 241–244 (2000).
[CrossRef]

Ide, M.

T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
[CrossRef]

Jamting, A.

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
[CrossRef]

Jellison, G. E.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

G. E. Jellison, F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371–373 (1996).
[CrossRef]

Kim, S. Y.

Koslowski, T.

T. Koslowski, “The electronic structure of molten salts: a numerical approach,” Ber. Bunsenges. Phys. Chem. 100, 95–100 (1996).
[CrossRef]

Lee, S.

S. Lee, J. Hong, “Comparison of various parameterization models for optical functions of amorphous materials: application for sputtered titanium dioxide thin films,” Jpn. J. Appl. Phys. 39, 241–244 (2000).
[CrossRef]

Leng, J.

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

Lowndes, D. H.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Mardare, D.

D. Mardare, P. Hones, “Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements,” Mater. Sci. Eng. B 68, 42–47 (1999).
[CrossRef]

Marti, J.

I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).

Martin, P. J.

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
[CrossRef]

Matsui, T.

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

Matsuura, M.

T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
[CrossRef]

Merculov, V. I.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Modine, F. A.

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

G. E. Jellison, F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371–373 (1996).
[CrossRef]

Mott, N. F.

See, e.g., N. F. Mott, E. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon, Oxford, 1979).

Nguyen, N. V.

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Nishide, T.

T. Nishide, S. Honda, M. Matsuura, M. Ide, “Surface, structural and optical properties of sol-gel derived HfO2 films,” Thin Solid Films 371, 61–65 (2000).
[CrossRef]

Oda, H.

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

Opsal, J.

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

Porqueras, I.

I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).

Postava, K.

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

Puretzky, A. A.

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

Richter, C. A.

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Rohatgi, A.

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

Sahoo, N. K.

D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
[CrossRef]

Sakakibara, T.

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

Senko, M.

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
[CrossRef]

Stirling, L. A.

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Takikawa, H.

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
[CrossRef]

H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

Tauc, J.

J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
[CrossRef]

Tepehan, F. Z.

F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
[CrossRef]

Tepehan, G. G.

F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
[CrossRef]

Thakur, S.

D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
[CrossRef]

Urbach, F.

F. Urbach, “The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Phys. Rev. 92, 1324 (1953).
[CrossRef]

Vancu, A.

J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
[CrossRef]

Vedam, K.

R. W. Collins, K. Vedam, “Ellipsometers,” in Encyclopedia of Applied Physics (VCH Publishers, Deerfield, Fla., 1993), Vol. 6.

Waldorf, A.

Yamaguchi, T.

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

Zhang, J.-Y.

J.-Y. Zhang, I. W. Boyd, “Ultrathin high-quality tantalum pentoxide films grown by photoinduced chemical vapor deposition,” Appl. Phys. Lett. 77, 3574–3576 (2000).
[CrossRef]

Appl. Opt. (2)

Appl. Phys. Lett. (3)

J.-Y. Zhang, I. W. Boyd, “Ultrathin high-quality tantalum pentoxide films grown by photoinduced chemical vapor deposition,” Appl. Phys. Lett. 77, 3574–3576 (2000).
[CrossRef]

G. E. Jellison, F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371–373 (1996).
[CrossRef]

N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, L. A. Stirling, “Effect of high-temperature annealing on dielectric function of Ta2O5 films observed by spectroscopic ellipsometry,” Appl. Phys. Lett. 77, 3012–3014 (2000).
[CrossRef]

Appl. Surface Sci. (1)

K. Postava, M. Aoyama, T. Yamaguchi, H. Oda, “Spectroellipsometric characterisation of materials for multilayer coatings,” Appl. Surface Sci. 175–176, 276–280 (2001).
[CrossRef]

Ber. Bunsenges. Phys. Chem. (1)

T. Koslowski, “The electronic structure of molten salts: a numerical approach,” Ber. Bunsenges. Phys. Chem. 100, 95–100 (1996).
[CrossRef]

Jpn. J. Appl. Phys. (1)

S. Lee, J. Hong, “Comparison of various parameterization models for optical functions of amorphous materials: application for sputtered titanium dioxide thin films,” Jpn. J. Appl. Phys. 39, 241–244 (2000).
[CrossRef]

Mater. Sci. Eng. B (1)

D. Mardare, P. Hones, “Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements,” Mater. Sci. Eng. B 68, 42–47 (1999).
[CrossRef]

Phys. Rev. (1)

F. Urbach, “The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Phys. Rev. 92, 1324 (1953).
[CrossRef]

Phys. Rev. B (1)

A. R. Forouhi, I. Bloomer, “Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Phys. Status Solid (1)

J. Tauc, R. Grigorovici, A. Vancu, “Optical properties and electronic structure of amorphous germanium,” Phys. Status Solid 15, 627–637 (1966).
[CrossRef]

Thin Solid Films (9)

A. Bendavid, P. J. Martin, A. Jamting, H. Takikawa, “Structural and optical properties of titanium oxide thin films deposited by filtered arc deposition,” Thin Solid Films 355–356, 6–11 (1999).
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H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, P. J. Martin, “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition,” Thin Solid Films 348, 145–151 (1999).
[CrossRef]

G. E. Jellison, V. I. Merculov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, J. B. Caughman, “Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry,” Thin Solid Films 377–378, 68–73 (2000).
[CrossRef]

G. E. Jellison, F. A. Modine, P. Doshi, A. Rohatgi, “Spectroscopic ellipsometry characterization of thin-film silicon nitride,” Thin Solid Films 313–314, 193–197 (1998).
[CrossRef]

J. Leng, J. Opsal, H. Chu, M. Senko, D. E. Aspnes, “Analytic representation of dielectric functions of materials for device and structural modeling,” Thin Solid Films 313–314, 132–136 (1998).
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I. Porqueras, J. Marti, E. Bertran, “Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications,” Thin Solid Films 449–452, 42–47 (1999).

F. E. Ghodsi, F. Z. Tepehan, G. G. Tepehan, “Optical properties of Ta2O5 thin films deposited using the spin coating process,” Thin Solid Films 295, 11–15 (1997).
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D. Bhattacharyya, N. K. Sahoo, S. Thakur, N. C. Das, “Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation,” Thin Solid Films 360, 96–102 (2000).
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Other (4)

R. W. Collins, K. Vedam, “Ellipsometers,” in Encyclopedia of Applied Physics (VCH Publishers, Deerfield, Fla., 1993), Vol. 6.

See, e.g., N. F. Mott, E. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon, Oxford, 1979).

Sopra S. A., Bois Colombes, France.

J. A. Woollam, Inc., Lincoln, Nebraska.

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Figures (3)

Fig. 1
Fig. 1

(a) Experimental ellipsometric data (open symbols, Ψ; filled symbols, Δ) measured at angles of incidence 57° (circles), 58° (squares), and 59° (triangles) and best-fit curves (solid curves) for the Al2O3 layer. A range for Δ of 90° to 270° was chosen. (b) Experimental transmission data (symbols) measured at normal incidence and best-fit curve (solid curve) for the Al2O3 layer.

Fig. 2
Fig. 2

Refractive index (solid curve) and extinction coefficient (dashed curve) of Al2O3 obtained by Tauc-Lorentz parameterization.

Fig. 3
Fig. 3

Extinction coefficients of various materials obtained from Tauc-Lorentz parameterization. The k values for LaF3 are 2 orders of magnitude smaller than for the other materials and refer to the right-hand y axis. The results for Ta2O5 in the spectral range below 300 nm are discussed in the text.

Tables (4)

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Table 1 Samples under Investigationa

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Table 2 Results of the Data Analysisa

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Table 3 Bandgap of TiO2 Reported in Several Publications

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Table 4 Bandgap of Ta2O5 Reported in Various Publications

Equations (2)

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ε2=AE0ΓE-Eg2E2-E022+Γ2E21E, E>Eg, ε2=0, EEg.
ε1=ε+2π P Egξε2ξξ2-E2dξ,

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