Abstract

We report single-wavelength ellipsometric measurements of the complex index of refraction of rough Zn3As2 films on InP substrates. What we believe to be a novel technique, based on surface roughness measurements by atomic-force microscopy, is discussed to extract useful information from the ellipsometry results. The anticipated presence of a thin oxide layer is confirmed by Auger electron spectroscopy.

© 2002 Optical Society of America

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