Abstract

A simplified theoretical model has been proposed to predict optical parameters such as thickness, thickness irregularity, refractive index, and extinction coefficient from transmission spectra. The proposed formula has been solved for thickness and thickness irregularity in the transparent region, and then the refractive index is calculated for the entire spectral region by use of the interference fringes order. The extinction coefficient is then calculated with the exact formula in the transparent region, and an appropriate model for the refractive index is used to solve for the extinction coefficient in the absorption region (where the interference fringes disappear). The proposed model is tested with the theoretical predicted data as well as experimental data. The calculation shows that the approximations used for solving a multiparameter nonlinear equation result in no significant errors.

© 2002 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
    [CrossRef]
  2. R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984).
    [CrossRef]
  3. J. I. Cisneros, “Optical characterization of dielectric and semiconductor thin films by use of transmission data,” Appl. Opt. 37, 5262–5270 (1998).
    [CrossRef]
  4. J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
    [CrossRef]
  5. J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
    [CrossRef]
  6. M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
    [CrossRef]
  7. K. F. Palmer, M. Z. Williams, “Determination of the optical constants of a thin film from transmittance measurement of a single film thickness,” Appl. Opt. 24, 1788–1798 (1985).
    [CrossRef]
  8. A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
    [CrossRef]
  9. I. Chambouleyron, J. M. Martinez, A. C. Moretti, M. Mulato, “Retrieval of optical constants and thickness of thin films from transmission spectra,” Appl. Opt. 36, 8238–8247 (1997).
    [CrossRef]
  10. R. Weil, M. Joucla, J. Loison, M. Mazilu, D. Ohlmann, M. Robino, G. Schwalbach, “Preparation of optical quality ZnCdTe thin films by vacuum evaporation,” Appl. Opt. 37, 2681–2686 (1998).
    [CrossRef]
  11. Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
    [CrossRef]
  12. M. Nowak, “Determination of optical constants and average thickness of inhomogeneous-rough thin films using spectral dependence of optical transmittance,” Thin Solid Films 254, 200–210 (1995).
    [CrossRef]
  13. O. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965).
  14. J. Szczyrowski, A. Czapla, “Optical absorption in D.C. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
    [CrossRef]
  15. A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
    [CrossRef]
  16. E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
    [CrossRef]
  17. A. H. Moharram, “Optical characterization of vapour-deposited amorphous As25S65Ag10 films,” Appl. Surf. Sci. 143, 39–44 (1999).
    [CrossRef]
  18. S. H. Wemple, M. DiDomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971).
    [CrossRef]
  19. E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
    [CrossRef]
  20. H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
    [CrossRef]
  21. A. R. Forouchi, I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
    [CrossRef]
  22. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975).
  23. J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
    [CrossRef]
  24. U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
    [CrossRef]
  25. A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
    [CrossRef]

2000 (1)

A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
[CrossRef]

1999 (3)

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

A. H. Moharram, “Optical characterization of vapour-deposited amorphous As25S65Ag10 films,” Appl. Surf. Sci. 143, 39–44 (1999).
[CrossRef]

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

1998 (2)

1997 (3)

I. Chambouleyron, J. M. Martinez, A. C. Moretti, M. Mulato, “Retrieval of optical constants and thickness of thin films from transmission spectra,” Appl. Opt. 36, 8238–8247 (1997).
[CrossRef]

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

1996 (2)

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

1995 (1)

M. Nowak, “Determination of optical constants and average thickness of inhomogeneous-rough thin films using spectral dependence of optical transmittance,” Thin Solid Films 254, 200–210 (1995).
[CrossRef]

1992 (1)

A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
[CrossRef]

1989 (1)

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

1987 (1)

A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
[CrossRef]

1986 (1)

A. R. Forouchi, I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

1985 (1)

1984 (1)

R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984).
[CrossRef]

1983 (1)

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

1977 (2)

J. Szczyrowski, A. Czapla, “Optical absorption in D.C. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
[CrossRef]

1976 (1)

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
[CrossRef]

1971 (1)

S. H. Wemple, M. DiDomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971).
[CrossRef]

Ali, Z.

A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
[CrossRef]

Alvarez, F.

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

Ameziane, E. L.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Aqili, A. K. S.

A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
[CrossRef]

Banerjee, H. D.

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

BellaKhder, H.

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Benko, N.

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

Bennouna, A.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
[CrossRef]

Bernal-Oliva, A. M.

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Bloomer, I.

A. R. Forouchi, I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Brunel, M.

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Callaerts, R.

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

Chahboum, N.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

Chambouleyron, I.

Chaudhuri, A. K.

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

Chaudhuri, S.

A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
[CrossRef]

Cisneros, J. I.

J. I. Cisneros, “Optical characterization of dielectric and semiconductor thin films by use of transmission data,” Appl. Opt. 37, 5262–5270 (1998).
[CrossRef]

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

Czapla, A.

J. Szczyrowski, A. Czapla, “Optical absorption in D.C. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

De Murcia, M.

J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
[CrossRef]

Debbagh, F.

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

DiDomenico, M.

S. H. Wemple, M. DiDomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971).
[CrossRef]

Elazhari, M. Y.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

Fillard, J. P.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
[CrossRef]

Fillard, P.

J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
[CrossRef]

Forouchi, A. R.

A. R. Forouchi, I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Gasiot, J.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
[CrossRef]

Gonzalez-Leal, J. M.

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Gordillo, G.

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

Grofcsik, A.

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

Heavens, O. S.

O. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965).

Idrissi, M. A.

A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
[CrossRef]

Jones, W. J.

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

Joucla, M.

Kubinyi, M.

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

Laaziz, Y.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
[CrossRef]

Loison, J.

Manifacier, J. C.

J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
[CrossRef]

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
[CrossRef]

Maqsood, A.

A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
[CrossRef]

Marquez, E.

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

Martinez, J. M.

Mazilu, M.

Moharram, A. H.

A. H. Moharram, “Optical characterization of vapour-deposited amorphous As25S65Ag10 films,” Appl. Surf. Sci. 143, 39–44 (1999).
[CrossRef]

Mondal, A.

A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
[CrossRef]

Moretti, A. C.

Mulato, M.

Nagels, P.

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

Navarro-Delgado, J. C.

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Nowak, M.

M. Nowak, “Determination of optical constants and average thickness of inhomogeneous-rough thin films using spectral dependence of optical transmittance,” Thin Solid Films 254, 200–210 (1995).
[CrossRef]

Ohlmann, D.

Outourhit, A.

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Outzourhit, A.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

Pal, A. K.

A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
[CrossRef]

Pal, U.

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

Palmer, K. F.

Pankove, J. I.

J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975).

Prieto-Alcon, R.

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Ramiro-Bargueno, J.

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

Rao, V. V.

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

Robino, M.

Saha, S.

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

Schwalbach, G.

Sleeckx, E.

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

Swanepoel, R.

R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984).
[CrossRef]

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

Szczyrowski, J.

J. Szczyrowski, A. Czapla, “Optical absorption in D.C. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

Torres, J.

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

Vlcek, M.

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Weil, R.

Wemple, S. H.

S. H. Wemple, M. DiDomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971).
[CrossRef]

Williams, M. Z.

Appl. Opt. (4)

Appl. Phys. A (1)

A. Mondal, S. Chaudhuri, A. K. Pal, “Optical properties of ZnTe films,” Appl. Phys. A 43, 81–84 (1987).
[CrossRef]

Appl. Surf. Sci. (2)

A. K. S. Aqili, Z. Ali, A. Maqsood, “Optical and structural properties of two-sourced evaporated ZnTe thin films,” Appl. Surf. Sci. 167, 1–11 (2000).
[CrossRef]

A. H. Moharram, “Optical characterization of vapour-deposited amorphous As25S65Ag10 films,” Appl. Surf. Sci. 143, 39–44 (1999).
[CrossRef]

J. Phys. D (1)

U. Pal, S. Saha, A. K. Chaudhuri, V. V. Rao, H. D. Banerjee, “Some optical properties of evaporated zinc telluride films,” J. Phys. D 22, 965–970 (1989).
[CrossRef]

J. Phys. E (3)

R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983).
[CrossRef]

R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984).
[CrossRef]

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for determination of the optical constants n, k and thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976).
[CrossRef]

Phys. Rev. B (2)

S. H. Wemple, M. DiDomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971).
[CrossRef]

A. R. Forouchi, I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018–7026 (1986).
[CrossRef]

Sol. Energy Mater. Sol. Cells (1)

H. BellaKhder, F. Debbagh, A. Outourhit, A. Bennouna, M. Brunel, E. L. Ameziane, “Characterization of Te/Zn/Te multilayers deposited by Rf-sputtering,” Sol. Energy Mater. Sol. Cells 45, 361–368 (1997).
[CrossRef]

Surf. Coat. Technol. (1)

E. Marquez, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, R. Prieto-Alcon, J. C. Navarro-Delgado, M. Vlcek, “Calculation and analysis of the complex refractive index of uniform film of As-S-Se glassy alloy deposited by thermal evaporation,” Surf. Coat. Technol. 122, 60–66 (1999).
[CrossRef]

Thin Solid Films (7)

J. C. Manifacier, M. De Murcia, P. Fillard, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films 41, 127–135 (1977).
[CrossRef]

M. Kubinyi, N. Benko, A. Grofcsik, W. J. Jones, “Determination of the thickness and optical constants of thin films from transmission spectra,” Thin Solid Films 286, 164–169 (1996).
[CrossRef]

J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thickness of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996).
[CrossRef]

J. Szczyrowski, A. Czapla, “Optical absorption in D.C. sputtered InAs films,” Thin Solid Films 46, 127–137 (1977).
[CrossRef]

A. Bennouna, Y. Laaziz, M. A. Idrissi, “The influence of thickness inhomogeneties on the transmission of semiconductor thin films,” Thin Solid Films 213, 55–63 (1992).
[CrossRef]

Y. Laaziz, A. Bennouna, M. Y. Elazhari, J. Ramiro-Bargueno, A. Outzourhit, N. Chahboum, E. L. Ameziane, “A method for monitoring the thickness of semiconductor and dielectric thin films: application to determination of large-area thickness profiles,” Thin Solid Films 303, 255–263 (1997).
[CrossRef]

M. Nowak, “Determination of optical constants and average thickness of inhomogeneous-rough thin films using spectral dependence of optical transmittance,” Thin Solid Films 254, 200–210 (1995).
[CrossRef]

Vacuum (1)

E. Marquez, P. Nagels, J. M. Gonzalez-Leal, A. M. Bernal-Oliva, E. Sleeckx, R. Callaerts, “On optical constants of amorphous GexSe1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition,” Vacuum 52, 55–60 (1999).
[CrossRef]

Other (2)

J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975).

O. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (10)

Fig. 1
Fig. 1

Optical parameters and directions of the transmittance and reflectance, adopted in Eqs. (1–(6).

Fig. 2
Fig. 2

Calculated transmittance curve of α-Si:H versus wavelength (λ), along with interference fringes order (m).

Fig. 3
Fig. 3

Solution of Eq. (18) for d and σ, (a) large range and (b) small range.

Fig. 4
Fig. 4

Linear fitting of the refractive index (n) versus 1/λ2 for α-Si:H.

Fig. 5
Fig. 5

Fitting of calculated absorption coefficient (α) values for α-Si:H.

Fig. 6
Fig. 6

Experimental transmission spectra of ZnTe film with interference fringes order (m).

Fig. 7
Fig. 7

Calculated values of the refractive index of ZnTe film, with fitting to Eq. (20).

Fig. 8
Fig. 8

Calculated values of the absorption coefficient, with fitting to Urbach relation.

Fig. 9
Fig. 9

Plot of α2 versus photon energy (h ν) for ZnTe film.

Fig. 10
Fig. 10

Calculated transmittance curve, with experimental transmission data, versus wavelength for ZnTe film.

Tables (2)

Tables Icon

Table 1 Calculated Values of Thickness (d) and Thickness Irregularity (σ) Obtained by Solution of Eq. (18) for Different Values of Interference Fringes Orders, for α-Si:H

Tables Icon

Table 2 Comparison between Calculated and Exact Values of the Absorption Coefficient in Different Regions, for α-Si:H

Equations (25)

Equations on this page are rendered with MathJax. Learn more.

T=1-ρT123U1-ρR321U2,
R321=r321r321*,
T123=n3/n1t123t123*,
t123=t12t23 expiψ/21+r12r23 expiψ,
r321=r32+r21 expiψ1+r32r21 expiψ.
rij=Ni-NjNi+Nj,  tij=2NiNi+Nj.
Ni=ni+iki,
ψ=4πN2d/λ=4πn2d/λ+4πk2di/λ=ϕ+iαd,
r12=r12 exp-22πσ/λ2n12=ηr12,
r21=r21 exp-22πσ/λ2n22=βr21,
t12=t12 exp-½2πσ/λ2n1-n22=γt12.
T=A1 expαdB1 exp2αd+C1 expαd+D1×B2 exp2αd+C2 expαd+D2B2 exp2αd+C3 expαd+D3,
4πnd/λm=mπ.
n2m, λ=mλ/4d.
m-1λm-1mλmm+1λm+1mλm-1λm-1-λmλm+1λm-λm+1.
n=n0+g/λ2,
4dnm=mλm,  4dnm+1=m+1λm+1,4dnm-1=m-1λm-1.
mλm-13λm+12+λm-12λm+13-λm-13λm2-λm+13λm2λm+1-λmλm-13λm+1-λm-12λm+12+λm-13λm-λm-12λm+1λm-λm-12λm2+λm+12λm2.
n2m, λ=mλm/4d.
Δ=Tm-Tme2+TM-TMe2.
Δ1=Tk-Te2.
n2=1+EmEdEm2-hν2=1+n02-1Em2Em2-hν2,
α=α0 exphν/Ee=expa+b/λ,
Texp-αd.
A1=γ216n1n31-ρn22+k22U,B1=st-ρsνU2,  B2=st,C1=β24n3k22-ZYcos ϕ+4k2n3Y+Zsin ϕ-ρU24k2Z-n3Ysin ϕ-2ZY+4n3k22cos ϕ,C2=β24n3k22-ZYcos ϕ+4k2n3Y+Zsin ϕ,C3=η24n3k22-ZYcos ϕ+4k2n3Y+Zsin ϕ,D1=β2uν-ρtuU2,  D2=β2uν,D3=η2uν,  u=n1-n22+k22,ν=n2-n32+k22,  s=n1+n22+k22,t=n2+n32+k22,Y=n22-n12+k22,  Z=n22-n32+k22,ρ=n1-n32+k32/n1+n32+k32,n3=n11/Ts+1/Ts2-11/2,U-1=1-ρ22Ts+1-ρ44Ts2+ρ21/2,

Metrics