Abstract

The electrical and photoconductive properties of chemically deposited PbS detectors are presented for a wide range of frequency, detector temperature, and background conditions. Emphasis is placed on those parameters (and interrelations among parameters) which may affect the system engineer’s decisions in writing a detector specification. Interactions which frequently give rise to misunderstanding as to the best utilization of detectors are discussed. Physical configurations, sizes, and mechanical tolerances achievable are presented.

© 1965 Optical Society of America

Lead Selenide Detectors for Ambient Temperature Operation

T. H. Johnson, H. T. Cozine, and B. N. McLean
Appl. Opt. 4(6) 693-696 (1965)

Lead Selenide Detectors for Intermediate Temperature Operation

D. E. Bode, T. H. Johnson, and B. N. McLean
Appl. Opt. 4(3) 327-331 (1965)

Detectors for Ultraviolet, Visible, and Infrared Radiation

R. A. Smith
Appl. Opt. 4(6) 631-638 (1965)

Photoconductive Indium Antimonide Detectors

F. D. Morten and R. E. J. King
Appl. Opt. 4(6) 659-663 (1965)

Indium Antimonide Submillimeter Photoconductive Detectors

E. H. Putley
Appl. Opt. 4(6) 649-657 (1965)