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Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 µm

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Abstract

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 µm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

© 2000 Optical Society of America

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