Abstract

A scanning critical illumination system is designed to couple a synchrotron radiation source to a three-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H × V = 8 mm × 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H × V = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (σ) of this illumination system is ∼0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at σ = 0.6 to confirm that the illumination optics can meet the requirements for three-aspherical-mirror imaging optics with a feature size of 0.06 µm.

© 2000 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  4. H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
    [CrossRef]
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    [CrossRef]

1999 (1)

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

1995 (1)

T. Haga, H. Kinoshita, “Illumination system for extreme ultraviolet lithography,” J. Vac. Sci. Technol. B 13, 2914–2918 (1995).
[CrossRef]

1993 (6)

1989 (1)

O. R. Wood, W. T. Silfvast, T. E. Jewell, “Short-wavelength annular-field optical system for imaging tenth-micron features,” J. Vac. Sci. Technol. B 7, 1613–1615 (1989).
[CrossRef]

Barr, P. K.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Berger, K. W.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Bernardez, L. J.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Cardinsle, G. F.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Ceglio, N. M.

Chapman, H. N.

D. W. Sweeney, R. M. Hudyma, H. N. Chapman, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Cingolani, R.

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

Cohen, S. J.

S. J. Cohen, L. G. Seppala, “Critical illumination condenser for EUV projection lithography,” in Extreme Ultraviolet Lithography, D. Attwood, F. Zernike, eds., Vol. 23 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1994), pp. 109–115.

Darnold, J. R.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Di Fabrizio, E.

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

Folk, D. R.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Gentili, M.

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

Goldsmith, J. E. M.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Goto, S.

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Grupido, N.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Haga, T.

T. Haga, H. Kinoshita, “Illumination system for extreme ultraviolet lithography,” J. Vac. Sci. Technol. B 13, 2914–2918 (1995).
[CrossRef]

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

Haney, S. J.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Hawryluk, A. M.

Henderson, C. C.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Hisatsugu, T.

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Hudyma, R. M.

D. W. Sweeney, R. M. Hudyma, H. N. Chapman, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Jefferson, K. L.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Jewell, T. E.

O. R. Wood, W. T. Silfvast, T. E. Jewell, “Short-wavelength annular-field optical system for imaging tenth-micron features,” J. Vac. Sci. Technol. B 7, 1613–1615 (1989).
[CrossRef]

Jin, P. S.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Keifer, P. N.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Kinoshita, H.

T. Haga, H. Kinoshita, “Illumination system for extreme ultraviolet lithography,” J. Vac. Sci. Technol. B 13, 2914–2918 (1995).
[CrossRef]

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Krenz, K. D.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Kubiak, G. D.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Kurihara, K.

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

Lawrence, G. N.

MacDwell, A. A.

Mizota, T.

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

Murakami, K.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Murphy, J. B.

Nguyen, K. B.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Niibe, M.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Nissen, R. P.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

Nucara, A.

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

O’Connell, D. J.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Oizumi, H.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Okamura, S.

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Osada, T.

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Oshino, T.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Perras, Y. E.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Platonv, Y. Y.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Ray-Chaudhuri, A. K.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Seppala, L. G.

G. E. Sommargren, L. G. Seppala, “Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography,” Appl. Opt. 32, 6938–6944 (1993).
[CrossRef] [PubMed]

S. J. Cohen, L. G. Seppala, “Critical illumination condenser for EUV projection lithography,” in Extreme Ultraviolet Lithography, D. Attwood, F. Zernike, eds., Vol. 23 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1994), pp. 109–115.

Silfvast, W. T.

O. R. Wood, W. T. Silfvast, T. E. Jewell, “Short-wavelength annular-field optical system for imaging tenth-micron features,” J. Vac. Sci. Technol. B 7, 1613–1615 (1989).
[CrossRef]

Smith, T. G.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Sommargren, G. E.

Stulen, R. H.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Sweatt, W. C.

Sweeney, D. W.

D. W. Sweeney, R. M. Hudyma, H. N. Chapman, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Taguchi, T.

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Takenaka, H.

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

Tichenor, D. A.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Torii, Y.

H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, Y. Torii, “Large-area, height-resolution pattern replication by the use of a two-aspherical-mirror system,” Appl. Opt. 34, 7079–7083 (1993).
[CrossRef]

Ver Berkmoes, A. A.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Watanabe, T.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Weingarten, L. I.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

White, D. L.

White, H. E.

H. E. White, Fundamentals of Optics, 4th ed. (McGraw-Hill, New York, 1981), p. 530.

Wood, O. R.

J. B. Murphy, D. L. White, A. A. MacDwell, O. R. Wood, “Synchrotron radiation source and condenser for projection x-ray lithography,” Appl. Opt. 32, 6920–6929 (1993).
[CrossRef] [PubMed]

O. R. Wood, W. T. Silfvast, T. E. Jewell, “Short-wavelength annular-field optical system for imaging tenth-micron features,” J. Vac. Sci. Technol. B 7, 1613–1615 (1989).
[CrossRef]

Wronosky, J. B.

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

Yamanashi, H.

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

Appl. Opt. (5)

J. Vac. Sci. Technol. B (2)

T. Haga, H. Kinoshita, “Illumination system for extreme ultraviolet lithography,” J. Vac. Sci. Technol. B 13, 2914–2918 (1995).
[CrossRef]

O. R. Wood, W. T. Silfvast, T. E. Jewell, “Short-wavelength annular-field optical system for imaging tenth-micron features,” J. Vac. Sci. Technol. B 7, 1613–1615 (1989).
[CrossRef]

J. Vac. Sci. Technol. B. (1)

S. Goto, T. Taguchi, T. Osada, S. Okamura, T. Hisatsugu, “Synchrontron radiation beamline for x-ray lithography,” J. Vac. Sci. Technol. B. 11, 286–295 (1993).
[CrossRef]

Rev. Sci. Instrum. (1)

E. Di Fabrizio, A. Nucara, M. Gentili, R. Cingolani, “Design of a beamline for soft and deep lithography on third generation synchrotron radiation source,” Rev. Sci. Instrum. 70, 1605–1613 (1999).
[CrossRef]

Other (6)

H. E. White, Fundamentals of Optics, 4th ed. (McGraw-Hill, New York, 1981), p. 530.

D. A. Tichenor, A. K. Ray-Chaudhuri, G. D. Kubiak, K. B. Nguyen, S. J. Haney, K. W. Berger, R. P. Nissen, Y. E. Perras, P. S. Jin, L. I. Weingarten, P. N. Keifer, R. H. Stulen, “Progress in the development of EUV image systems,” in Extreme Ultraviolet Lithography, G. D. Kubiak, D. R. Kania, eds., Vol. 4 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., 1996), pp. 2–8.

S. J. Cohen, L. G. Seppala, “Critical illumination condenser for EUV projection lithography,” in Extreme Ultraviolet Lithography, D. Attwood, F. Zernike, eds., Vol. 23 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1994), pp. 109–115.

D. W. Sweeney, R. M. Hudyma, H. N. Chapman, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

J. E. M. Goldsmith, P. K. Barr, K. W. Berger, L. J. Bernardez, G. F. Cardinsle, J. R. Darnold, D. R. Folk, S. J. Haney, C. C. Henderson, K. L. Jefferson, K. D. Krenz, G. D. Kubiak, R. P. Nissen, D. J. O’Connell, Y. E. Perras, A. K. Ray-Chaudhuri, T. G. Smith, R. H. Stulen, D. A. Tichenor, A. A. Ver Berkmoes, J. B. Wronosky, “Recent advances in the Sendia EUV 10× microstepper,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 11–19 (1998).
[CrossRef]

H. Kinoshita, T. Watanabe, M. Niibe, H. Oizumi, H. Yamanashi, K. Murakami, T. Oshino, Y. Y. Platonv, N. Grupido, “Three-aspherical-mirror system for EUV lithography,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 20–31 (1998).
[CrossRef]

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Figures (9)

Fig. 1
Fig. 1

(a) Simulation image of the source in real space, (b) simulation beam divergence of the source in angle space.

Fig. 2
Fig. 2

Configuration of the illumination system.

Fig. 3
Fig. 3

Beam size and divergence at the entrance of mirror C1.

Fig. 4
Fig. 4

Beam size and density distribution at the mask.

Fig. 5
Fig. 5

Schematic view of the illumination spot and formation of a ring field at the mask by scanning of mirror C1.

Fig. 6
Fig. 6

(a) Illumination beam divergence at the mask. (b) Illumination beam size at the entrance pupil.

Fig. 7
Fig. 7

Variation of the designed diffraction square-wave response with spatial frequency at a wavelength of 13 nm and NAmask = 0.02.

Fig. 8
Fig. 8

Geometrical shadows of five 0.06-µm-wide bars spaced 0.06 µm apart (solid curves) together with the theoretical diffraction intensity profiles of the bars at three positions (dashed curves): (a) partial coherence factor of σ = 1, (b) partial coherence factor of σ = 0.6.

Fig. 9
Fig. 9

Geometrical shadows of five 0.1-µm-wide bars spaced 0.1 µm apart (solid curves) together with the theoretical diffraction intensity profiles of the bars at three positions (dashed curves): (a) partial coherence factor of σ = 1, (b) partial coherence factor of σ = 0.6.

Tables (3)

Tables Icon

Table 1 Specifications of the SR Source

Tables Icon

Table 2 Specifications of Three-Aspherical-Image Optics

Tables Icon

Table 3 Specifications of Illumination Optics

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

1/p+1/q=2/Rt sin θ,
1/p+1/q=2 sin θ/Rs,

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