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Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers

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Abstract

A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 µm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.

© 2000 Optical Society of America

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