Abstract
Hafnium dioxide thin films were deposited by reactive electron-beam evaporation at six different substrate temperatures on fused-silica substrates. During the depositions, the scattering of light caused by the growth of defects in the films was recorded with in situ total internal reflection microscopy. After deposition the films were analyzed by angle-resolved scatterometery, spectrophotometric measurement of film reflectance and transmittance, atomic force microscopy, and x-ray diffraction. We explore the effects of film defect formation on film optical properties and film surface topography using these data.
© 2000 Optical Society of America
Full Article | PDF ArticleMore Like This
David Reicher and Kenneth Jungling
Appl. Opt. 36(7) 1626-1637 (1997)
Hongfei Jiao, Xinbin Cheng, Jiangtao Lu, Ganghua Bao, Yongli Liu, Bin Ma, Pengfei He, and Zhanshan Wang
Appl. Opt. 50(9) C309-C315 (2011)
Robert Chow and Nick Tsujimoto
Appl. Opt. 35(25) 5095-5101 (1996)