Abstract

We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.

© 1999 Optical Society of America

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  1. M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
    [CrossRef]
  2. J. V. Sandusky, S. R. J. Brueck, “A CW external-cavity surface emitting laser,” IEEE Photonics Technol. Lett. 8, 313–315 (1996).
    [CrossRef]
  3. M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
    [CrossRef]
  4. R. A. Stradling, P. C. Klipstein, eds., Growth and Characterisation of Semiconductors: Papers Contributing to a Short Course (Institute of Physics, London, 1989).
  5. S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
    [CrossRef]
  6. M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
    [CrossRef]

1997

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

1996

J. V. Sandusky, S. R. J. Brueck, “A CW external-cavity surface emitting laser,” IEEE Photonics Technol. Lett. 8, 313–315 (1996).
[CrossRef]

1993

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

1989

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Brennan, T. M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Brueck, S. R. J.

J. V. Sandusky, S. R. J. Brueck, “A CW external-cavity surface emitting laser,” IEEE Photonics Technol. Lett. 8, 313–315 (1996).
[CrossRef]

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Coldren, L. A.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

Corzine, S. W.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

Geels, R. S.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

Hadley, M. A.

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Hammons, E. M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Lau, K. Y.

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

McInnery, J. G.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Osinski, M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Raja, M. Y. A.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Sandusky, J. V.

J. V. Sandusky, S. R. J. Brueck, “A CW external-cavity surface emitting laser,” IEEE Photonics Technol. Lett. 8, 313–315 (1996).
[CrossRef]

Schaus, C. F.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

Scott, J. W.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

Smith, J. S.

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

Spaque, R.

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Wilson, G. C.

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

Yan, R-H.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

Appl. Phys. Lett.

M. A. Hadley, G. C. Wilson, K. Y. Lau, J. S. Smith, “High single-transverse-mode output from external-cavity surface-emitting laser diodes,” Appl. Phys. Lett. 63, 1607–1609 (1993).
[CrossRef]

IEEE J. Quantum Electron.

S. W. Corzine, R. S. Geels, J. W. Scott, R-H. Yan, L. A. Coldren, “Design of Fabry–Perot surface emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron. 25, 1513–1524 (1989).
[CrossRef]

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInnery, T. M. Brennan, E. M. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron. 25, 1500–1512 (1989).
[CrossRef]

IEEE Photonics Technol. Lett.

J. V. Sandusky, S. R. J. Brueck, “A CW external-cavity surface emitting laser,” IEEE Photonics Technol. Lett. 8, 313–315 (1996).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Spaque, A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Other

R. A. Stradling, P. C. Klipstein, eds., Growth and Characterisation of Semiconductors: Papers Contributing to a Short Course (Institute of Physics, London, 1989).

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Figures (5)

Fig. 1
Fig. 1

(a) Calculated device reflectivity (solid curve) and group delay of the DPSEL structure. Insets indicate the optical field overlap with the QW’s at spectral positions X and Y. Note that at X the condition for resonant periodic gain is satisfied. (b) Measured reflectivity of the DPSEL structure.

Fig. 2
Fig. 2

DPSEL cavity with two 670-nm pump lasers coupled geometrically by use of a 45° highly reflective mirror. ROC, radius of curvature.

Fig. 3
Fig. 3

Single transverse mode power transfer characteristic of the DPSEL system, and laser slope efficiency at different pump powers.

Fig. 4
Fig. 4

Beam profile of the DPSEL system output beam showing the measured (a) x-axis profile and (b) y-axis profile. Gaussian fits to both profiles are also shown.

Fig. 5
Fig. 5

Spectral characteristics of the laser system showing (a) the wavelength tuning that can be accessed if one varies the position of the internal resonances by moving the sample position, (b) the tuning range for one sample position that was obtained with an intracavity prisim, (c) a typical oscillating laser spectrum (spectrometer resolution limited).

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