Electric-field multiplexing (EFM) results from the tuning of the effective wavelength of the light beam inside a photorefractive crystal. This tuning results from the application of an external electric field to the crystal during holographic recording. We demonstrate the high Bragg selectivity of this multiplexing technique in paraelectric crystals and compare it with the selectivity obtained in the ferroelectric phase. The effects of the two major physical parameters of working in the paraelectric phase, the temperature and the external electric field applied during the writing stage, are investigated. Experimental results of the EFM of three image-bearing holograms recorded in reflection geometry are presented along with a qualitative analysis of the Bragg selectivity in paraelectric crystals.
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