Abstract

A procedure to make optical quality thin films of ZnxCd1-xTe by use of vacuum evaporation of the ternary compound has been developed. The starting point was the preparation of the compound that was then used as the source in a simple vacuum evaporation system. The characteristics of a film containing 85% ZnTe (x = 0.85) are presented. Electron microscope, atomic force microscope, x-ray and optical spectral measurements were made. The index of refraction was determined at room temperature from transmittance measurements in the range of from 580 to 800 nm and was found to agree within 1% with values found by others for single crystals. We did this by assuming a Sellmeier equation and a known index of refraction at infinite wavelength. The calculation also yielded the roughness of the film.

© 1998 Optical Society of America

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  1. D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
    [CrossRef]
  2. V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
    [CrossRef]
  3. A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
    [CrossRef]
  4. J. H. Dinan, S. B. Qadri, “Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy,” J. Vac. Sci. Technol. A 3, 851–854 (1985).
    [CrossRef]
  5. D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
    [CrossRef]
  6. C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
    [CrossRef]
  7. J. L. Reno, E. D. Jones, “Determination of the band gap energy on composition for Cd1-xZnxTe,” Phys. Rev. 45, 1440–1442 (1992).
    [CrossRef]
  8. B. Pellicary, J. P. Chamonal, G. L. Destefanis, L. Di Cioccio, “Growth and characterization of LPE CdHgTe/dZnTe/CeZnTe structure,” in Focal Plane Arrays: Technology and Applications, J. P. Chatard, ed., Proc. SPIE865, 22–29 (1988).
    [CrossRef]
  9. M. B. Basol, V. K. Kapur, M. L. Ferris, “Low-cost technique for preparing Cd1-xZnxTe films and solar cells,” J. Appl. Phys. 66, 1816–1821 (1989).
    [CrossRef]
  10. T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
    [CrossRef]
  11. M. G. Peters, A. L. Fahrenbruch, R. H. Bube, “Deposition and properties of zinc cadmium telluride films,” J. Vac. Sci. Technol. A 6, 3098–3102 (1988).
    [CrossRef]
  12. J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
    [CrossRef]
  13. B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).
  14. J. C. Woolley, B. Ray, “Solid solution in AIIBVI tellurides,” J. Phys. Chem. Solids 13, 151–153 (1960).
    [CrossRef]
  15. S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
    [CrossRef]
  16. M. Mazilu, “Etude stationnaire et dynamique des systemes a n-niveaux sous eccitation laser,” M.S. thesis (Universite Louis Pasteur, Strasbourg, 1998).
  17. H. R. Philipp, “Silicon dioxide (SiO2) (glass),” in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), p. 760.
  18. S. Adachi, T. Kimura, “Refractive index dispersion in Zn1-xCdxTe ternary alloys,” Jpn. J. Appl. Phys. 32, 3866–3867 (1993).
    [CrossRef]
  19. D. P. Arndt, R. M. A. Azzam, J. M. Bennett, J. P. Borgogno, C. K. Carniglia, W. E. Case, J. A. Dobrowolski, U. J. Gibson, T. Tuttle Hart, F. C. Ho, V. A. Hodgkin, W. P. Klapp, H. A. Macleod, E. Pelletier, M. K. Purvis, D. M. Quinn, D. H. Strome, R. Swenson, P. A. Temple, T. F. Thonn, “Multiple determination of the optical constants of thin-film coating materials,” Appl. Opt. 23, 3571–3596 (1984).
    [CrossRef] [PubMed]

1993

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

S. Adachi, T. Kimura, “Refractive index dispersion in Zn1-xCdxTe ternary alloys,” Jpn. J. Appl. Phys. 32, 3866–3867 (1993).
[CrossRef]

1992

J. L. Reno, E. D. Jones, “Determination of the band gap energy on composition for Cd1-xZnxTe,” Phys. Rev. 45, 1440–1442 (1992).
[CrossRef]

1991

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
[CrossRef]

S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
[CrossRef]

1990

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

1989

M. B. Basol, V. K. Kapur, M. L. Ferris, “Low-cost technique for preparing Cd1-xZnxTe films and solar cells,” J. Appl. Phys. 66, 1816–1821 (1989).
[CrossRef]

1988

M. G. Peters, A. L. Fahrenbruch, R. H. Bube, “Deposition and properties of zinc cadmium telluride films,” J. Vac. Sci. Technol. A 6, 3098–3102 (1988).
[CrossRef]

1986

T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
[CrossRef]

1985

J. H. Dinan, S. B. Qadri, “Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy,” J. Vac. Sci. Technol. A 3, 851–854 (1985).
[CrossRef]

D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
[CrossRef]

1984

1960

J. C. Woolley, B. Ray, “Solid solution in AIIBVI tellurides,” J. Phys. Chem. Solids 13, 151–153 (1960).
[CrossRef]

Adachi, S.

S. Adachi, T. Kimura, “Refractive index dispersion in Zn1-xCdxTe ternary alloys,” Jpn. J. Appl. Phys. 32, 3866–3867 (1993).
[CrossRef]

Allazov, M. R.

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

Allred, D. D.

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

Arndt, D. P.

Aydinli, A.

A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
[CrossRef]

Azzam, R. M. A.

Basol, M. B.

M. B. Basol, V. K. Kapur, M. L. Ferris, “Low-cost technique for preparing Cd1-xZnxTe films and solar cells,” J. Appl. Phys. 66, 1816–1821 (1989).
[CrossRef]

Bennett, J. M.

Benson, J. D.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Borgogno, J. P.

Bube, R. H.

M. G. Peters, A. L. Fahrenbruch, R. H. Bube, “Deposition and properties of zinc cadmium telluride films,” J. Vac. Sci. Technol. A 6, 3098–3102 (1988).
[CrossRef]

Carniglia, C. K.

Case, W. E.

Chamonal, J. P.

B. Pellicary, J. P. Chamonal, G. L. Destefanis, L. Di Cioccio, “Growth and characterization of LPE CdHgTe/dZnTe/CeZnTe structure,” in Focal Plane Arrays: Technology and Applications, J. P. Chatard, ed., Proc. SPIE865, 22–29 (1988).
[CrossRef]

Chu, S. S.

T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
[CrossRef]

Chu, T. L.

T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
[CrossRef]

Compaan, A.

A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
[CrossRef]

Contreras-Puente, G.

A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
[CrossRef]

Crégut, O.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

Destefanis, G. L.

B. Pellicary, J. P. Chamonal, G. L. Destefanis, L. Di Cioccio, “Growth and characterization of LPE CdHgTe/dZnTe/CeZnTe structure,” in Focal Plane Arrays: Technology and Applications, J. P. Chatard, ed., Proc. SPIE865, 22–29 (1988).
[CrossRef]

Di Cioccio, L.

B. Pellicary, J. P. Chamonal, G. L. Destefanis, L. Di Cioccio, “Growth and characterization of LPE CdHgTe/dZnTe/CeZnTe structure,” in Focal Plane Arrays: Technology and Applications, J. P. Chatard, ed., Proc. SPIE865, 22–29 (1988).
[CrossRef]

Dinan, J. H.

J. H. Dinan, S. B. Qadri, “Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy,” J. Vac. Sci. Technol. A 3, 851–854 (1985).
[CrossRef]

Dobrowolski, J. A.

Fahrenbruch, A. L.

M. G. Peters, A. L. Fahrenbruch, R. H. Bube, “Deposition and properties of zinc cadmium telluride films,” J. Vac. Sci. Technol. A 6, 3098–3102 (1988).
[CrossRef]

Faurie, J. P.

D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
[CrossRef]

Ferris, M. L.

M. B. Basol, V. K. Kapur, M. L. Ferris, “Low-cost technique for preparing Cd1-xZnxTe films and solar cells,” J. Appl. Phys. 66, 1816–1821 (1989).
[CrossRef]

Firszt, F.

T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
[CrossRef]

Gibson, U. J.

Gonzales-Hernandez, J.

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

Granger, R.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

Grun, J. B.

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Herrington, C.

T. L. Chu, S. S. Chu, F. Firszt, C. Herrington, “Deposition and properties of zinc telluride and cadmium telluride films,” J. Appl. Phys. 59, 1259–1263 (1986).
[CrossRef]

Ho, F. C.

Hodgkin, V. A.

Hönerlage, B.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Huang, P. C.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Johnson, S. M.

S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
[CrossRef]

Jones, E. D.

J. L. Reno, E. D. Jones, “Determination of the band gap energy on composition for Cd1-xZnxTe,” Phys. Rev. 45, 1440–1442 (1992).
[CrossRef]

Kalisher, M. H.

S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
[CrossRef]

Kapur, V. K.

M. B. Basol, V. K. Kapur, M. L. Ferris, “Low-cost technique for preparing Cd1-xZnxTe films and solar cells,” J. Appl. Phys. 66, 1816–1821 (1989).
[CrossRef]

Kimura, T.

S. Adachi, T. Kimura, “Refractive index dispersion in Zn1-xCdxTe ternary alloys,” Jpn. J. Appl. Phys. 32, 3866–3867 (1993).
[CrossRef]

Klapp, W. P.

Konkel, W. H.

S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
[CrossRef]

Levy, R.

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Loison, J. L.

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Lopez-Cruz, E.

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

Macleod, H. A.

Maslenko, Yu. S.

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

Mason, A.

A. Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, “Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition,” Solid State Commun. 80, 465–468 (1991).
[CrossRef]

Mazilu, M.

M. Mazilu, “Etude stationnaire et dynamique des systemes a n-niveaux sous eccitation laser,” M.S. thesis (Universite Louis Pasteur, Strasbourg, 1998).

Mendoza-Alvares, J. G.

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

Netiksis, V.

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Ohlmann, D.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

Olego, D. J.

D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
[CrossRef]

Pawlik, D. A.

J. Gonzales-Hernandez, O. Zelaya, J. G. Mendoza-Alvares, E. Lopez-Cruz, D. A. Pawlik, D. D. Allred, “Structure and optical characterization of ZnxCd1-xTe thin films prepared by the close spaced vapor transport method,” J. Vac. Sci. Technol. A 9, 550–553 (1991).
[CrossRef]

Pelant, I.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

Pelletier, E.

Pellicary, B.

B. Pellicary, J. P. Chamonal, G. L. Destefanis, L. Di Cioccio, “Growth and characterization of LPE CdHgTe/dZnTe/CeZnTe structure,” in Focal Plane Arrays: Technology and Applications, J. P. Chatard, ed., Proc. SPIE865, 22–29 (1988).
[CrossRef]

Peters, M. G.

M. G. Peters, A. L. Fahrenbruch, R. H. Bube, “Deposition and properties of zinc cadmium telluride films,” J. Vac. Sci. Technol. A 6, 3098–3102 (1988).
[CrossRef]

Philipp, H. R.

H. R. Philipp, “Silicon dioxide (SiO2) (glass),” in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), p. 760.

Purvis, M. K.

Qadri, S. B.

J. H. Dinan, S. B. Qadri, “Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy,” J. Vac. Sci. Technol. A 3, 851–854 (1985).
[CrossRef]

Quinn, D. M.

Raccah, P. M.

D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
[CrossRef]

Ray, B.

J. C. Woolley, B. Ray, “Solid solution in AIIBVI tellurides,” J. Phys. Chem. Solids 13, 151–153 (1960).
[CrossRef]

Reno, J. L.

J. L. Reno, E. D. Jones, “Determination of the band gap energy on composition for Cd1-xZnxTe,” Phys. Rev. 45, 1440–1442 (1992).
[CrossRef]

Sen, S.

S. M. Johnson, S. Sen, W. H. Konkel, M. H. Kalisher, “Optical techniques for composition measurement of bulk and thin-film Cd1-xZnxTe,” J. Vac. Sci. Technol. B 9, 1897–1901 (1991).
[CrossRef]

Sivananthan, S.

D. J. Olego, J. P. Faurie, S. Sivananthan, P. M. Raccah, “Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrate,” Appl. Phys. Lett. 47, 1172–1174 (1985).
[CrossRef]

Skoropanov, A. S.

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

Skums, V. F.

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

Stock, S. R.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Strome, D. H.

Summers, C. J.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Swenson, R.

Temple, P. A.

Thonn, T. F.

Torabi, A.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Triboulet, R.

D. Ohlmann, O. Crégut, I. Pelant, R. Granger, R. Triboulet, B. Hönerlage, “Linear and nonlinear optical properties of ZnCdTe monocrystals,” J. Luminesc. 54, 357–367 (1993).
[CrossRef]

Tuttle Hart, T.

Valevskii, B. L.

B. L. Valevskii, V. F. Skums, A. S. Skoropanov, M. R. Allazov, Yu. S. Maslenko, “Synthesis of Cd1-xZnxTe and study of its properties at high pressures,” Izv. Akad. Nauk SSSR, Neorgan. Mater. 26, 735–738 (1990).

Wagner, B. K.

C. J. Summers, A. Torabi, B. K. Wagner, J. D. Benson, S. R. Stock, P. C. Huang, “MBE growth of CdTe and ZnCdTe on GaAs substrates,” in Materials Technologies for IR Detectors, J. Besson, ed., Proc. SPIE659, 153–160 (1986).
[CrossRef]

Weil, R.

V. Netiksis, B. Hönerlage, R. Weil, J. L. Loison, J. B. Grun, R. Levy, “Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films,” J. Appl. Phys. 74, 5729–5736 (1993).
[CrossRef]

Woolley, J. C.

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Figures (4)

Fig. 1
Fig. 1

Electron microscope photographs of Zn0.15Cd0.85Te. The optical transmittance at 700 nm of the various films are A, opaque; B, 1.6%; C, 27%; and D, 60%. All the films are single phase and have sharp x-ray diffraction peaks.

Fig. 2
Fig. 2

X-ray diffraction of the film after annealing. All the peaks of ZnCdTe appear; the (111) peak is shown on a scale 10 times smaller than the other peaks. Note the expanded abscissa to emphasize the sharpness of the peaks.

Fig. 3
Fig. 3

Optical transmittance spectra of film D before and after annealing. The dashed curves are the experimental data, whereas the solid curve is the best fit obtained as explained in the text.

Fig. 4
Fig. 4

Refractive index as a function of wavelength of Zn0.85Cd0.15Te polycrystalline thin films as found in this study (solid curve), compared with the curves given by Adachi and Kimura,17 for x = 1.0 and 0.8 (dashed curves). The optical absorption coefficient wavelength dependence of the film derived from the experimental data is also shown.

Equations (7)

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T = ρ T 12 t 12 t 23 t 31 exp i   2 π n 2 d λ - α d 2 1 - ρ R 21 r 21 r 23 exp i   4 π n 2 d λ - α d 2 ,
ρ T 12 = exp - 2 π n 2 λ 2 Δ 2 2 ,
ρ R 21 = exp - 4 π n 2 λ 2 Δ 2 2 ,
t ij = 2 n i n i + n j ,
r ij = n i - n j n i + n j .
n 2 λ = A + B λ 2 λ 2 - C ,
n 2 = A + B = 7.26 - 0.05 x

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