Abstract

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs–based and SI-GaAs–based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

© 1997 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
    [CrossRef]
  2. A. P. DeFonzo, C. R. Lutz, “Optoelectronic transmission and reception of ultrafast electrical pulses,” Appl. Phys. Lett. 51, 212–214 (1987).
    [CrossRef]
  3. P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
    [CrossRef]
  4. M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
    [CrossRef]
  5. D. Grischkowsky, S. Keiding, M. van Exter, Ch. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006–2014 (1990).
    [CrossRef]
  6. D. Grischkowsky, N. Katzenellenbogen, “Femtosecond pulses of terahertz radiation: Physics and applications,” in Picosecond Electronics and Optoelectronics, T. C. L. G. Sollner, J. Shah, eds. Vol. 9 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1991) pp. 9–14.
  7. A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
    [CrossRef]
  8. H. Harde, D. Grischkowsky, “Coherent transients excited by subpicosecond pulses of terahertz radiation,” J. Opt. Soc. Am. 8, 1642–1651 (1991).
    [CrossRef]
  9. N. Katzenellenbogen, D. Grischkowsky, “Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface,” Appl. Phys. Lett. 58, 222–224 (1991).
    [CrossRef]
  10. S. E. Ralph, D. Grischkowsky, “Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection,” Appl. Phys. Lett. 59, 1972–1974 (1992).
    [CrossRef]
  11. M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
    [CrossRef]
  12. S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
    [CrossRef]
  13. D. C. Look, “Molecular beam epitaxial GaAs grown at low temperature,” Thin Solid Films 231, 61–73 (1993).
    [CrossRef]
  14. Y. Yamada, A. Mitsuishi, H. Yoshinaga, “Transmission filters in the far-infrared region,” J. Opt. Soc. Am. 52, 17–19 (1962).
    [CrossRef]
  15. S. Sato, S. Hayakawa, T. Matsumoto, H. Matsuo, H. Murakami, K. Sakai, A. E. Lange, P. L. Richards, “Submillimeter wave low pass filters made of glass beads,” Appl. Opt. 28, 4478–4481 (1989).
    [CrossRef] [PubMed]
  16. J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
    [CrossRef]
  17. P. K. Benicewicz, A. J. Taylor, “Scaling of terahertz radiation from large-aperture biased InP photoconductors,” Opt. Lett. 18, 1332–1334 (1993).
    [CrossRef] [PubMed]
  18. A. J. Taylor, P. K. Benicewicz, S. M. Young, “Modeling of femtosecond electromagnetic pulses from large-aperture photoconductors,” Opt. Lett. 18, 1340–1342 (1993).
    [CrossRef] [PubMed]

1994

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

1993

1992

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

S. E. Ralph, D. Grischkowsky, “Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection,” Appl. Phys. Lett. 59, 1972–1974 (1992).
[CrossRef]

S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
[CrossRef]

1991

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

H. Harde, D. Grischkowsky, “Coherent transients excited by subpicosecond pulses of terahertz radiation,” J. Opt. Soc. Am. 8, 1642–1651 (1991).
[CrossRef]

N. Katzenellenbogen, D. Grischkowsky, “Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface,” Appl. Phys. Lett. 58, 222–224 (1991).
[CrossRef]

1990

1989

S. Sato, S. Hayakawa, T. Matsumoto, H. Matsuo, H. Murakami, K. Sakai, A. E. Lange, P. L. Richards, “Submillimeter wave low pass filters made of glass beads,” Appl. Opt. 28, 4478–4481 (1989).
[CrossRef] [PubMed]

M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
[CrossRef]

1988

P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
[CrossRef]

1987

A. P. DeFonzo, C. R. Lutz, “Optoelectronic transmission and reception of ultrafast electrical pulses,” Appl. Phys. Lett. 51, 212–214 (1987).
[CrossRef]

1984

D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
[CrossRef]

1962

Abe, H.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Abe, Y.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Auston, D. H.

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
[CrossRef]

D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
[CrossRef]

Benicewicz, P. K.

Cheung, K. P.

D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
[CrossRef]

Darrow, J. T.

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

DeFonzo, A. P.

A. P. DeFonzo, C. R. Lutz, “Optoelectronic transmission and reception of ultrafast electrical pulses,” Appl. Phys. Lett. 51, 212–214 (1987).
[CrossRef]

Fattinger, Ch.

D. Grischkowsky, S. Keiding, M. van Exter, Ch. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006–2014 (1990).
[CrossRef]

M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
[CrossRef]

Grischkowsky, D.

S. E. Ralph, D. Grischkowsky, “Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection,” Appl. Phys. Lett. 59, 1972–1974 (1992).
[CrossRef]

H. Harde, D. Grischkowsky, “Coherent transients excited by subpicosecond pulses of terahertz radiation,” J. Opt. Soc. Am. 8, 1642–1651 (1991).
[CrossRef]

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

N. Katzenellenbogen, D. Grischkowsky, “Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface,” Appl. Phys. Lett. 58, 222–224 (1991).
[CrossRef]

D. Grischkowsky, S. Keiding, M. van Exter, Ch. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006–2014 (1990).
[CrossRef]

M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
[CrossRef]

D. Grischkowsky, N. Katzenellenbogen, “Femtosecond pulses of terahertz radiation: Physics and applications,” in Picosecond Electronics and Optoelectronics, T. C. L. G. Sollner, J. Shah, eds. Vol. 9 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1991) pp. 9–14.

Gupta, S.

S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
[CrossRef]

Hangyo, M.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Harde, H.

H. Harde, D. Grischkowsky, “Coherent transients excited by subpicosecond pulses of terahertz radiation,” J. Opt. Soc. Am. 8, 1642–1651 (1991).
[CrossRef]

Harima, H.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Hayakawa, S.

Kanamoto, K.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Katzenellenbogen, N.

N. Katzenellenbogen, D. Grischkowsky, “Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface,” Appl. Phys. Lett. 58, 222–224 (1991).
[CrossRef]

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

D. Grischkowsky, N. Katzenellenbogen, “Femtosecond pulses of terahertz radiation: Physics and applications,” in Picosecond Electronics and Optoelectronics, T. C. L. G. Sollner, J. Shah, eds. Vol. 9 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1991) pp. 9–14.

Keiding, S.

Lange, A. E.

Look, D. C.

D. C. Look, “Molecular beam epitaxial GaAs grown at low temperature,” Thin Solid Films 231, 61–73 (1993).
[CrossRef]

Lutz, C. R.

A. P. DeFonzo, C. R. Lutz, “Optoelectronic transmission and reception of ultrafast electrical pulses,” Appl. Phys. Lett. 51, 212–214 (1987).
[CrossRef]

Matsumoto, T.

Matsuo, H.

Melloch, M. R.

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

Mitsuishi, A.

Morse, J. D.

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

Mourou, G. A.

S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
[CrossRef]

Murakami, H.

Nakashima, S.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Nuss, M. C.

P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
[CrossRef]

Otsuka, N.

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

Ralph, S. E.

S. E. Ralph, D. Grischkowsky, “Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection,” Appl. Phys. Lett. 59, 1972–1974 (1992).
[CrossRef]

Richards, P. L.

Sakai, K.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

S. Sato, S. Hayakawa, T. Matsumoto, H. Matsuo, H. Murakami, K. Sakai, A. E. Lange, P. L. Richards, “Submillimeter wave low pass filters made of glass beads,” Appl. Opt. 28, 4478–4481 (1989).
[CrossRef] [PubMed]

Sato, S.

Smith, P. R.

P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
[CrossRef]

D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
[CrossRef]

Tani, M.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Taylor, A. J.

Tokuda, Y.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Tsukada, N.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

van Exter, M.

D. Grischkowsky, S. Keiding, M. van Exter, Ch. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006–2014 (1990).
[CrossRef]

M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
[CrossRef]

Warren, A. C.

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

Whitaker, J. F.

S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
[CrossRef]

Woodall, J. M.

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

Xi-Cheng,

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

Yamada, Y.

Yoshinaga, H.

Young, S. M.

Appl. Opt.

Appl. Phys. Lett.

M. van Exter, Ch. Fattinger, D. Grischkowsky, “High-brightness terahertz beams characterized with an ultrafast detector,” Appl. Phys. Lett. 55, 337–339 (1989).
[CrossRef]

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, N. Otsuka, “Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers,” Appl. Phys. Lett. 58, 1512–1514 (1991).
[CrossRef]

N. Katzenellenbogen, D. Grischkowsky, “Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface,” Appl. Phys. Lett. 58, 222–224 (1991).
[CrossRef]

S. E. Ralph, D. Grischkowsky, “Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection,” Appl. Phys. Lett. 59, 1972–1974 (1992).
[CrossRef]

D. H. Auston, K. P. Cheung, P. R. Smith, “Picosecond photoconducting Hertzian dipoles,” Appl. Phys. Lett. 45, 284–286 (1984).
[CrossRef]

A. P. DeFonzo, C. R. Lutz, “Optoelectronic transmission and reception of ultrafast electrical pulses,” Appl. Phys. Lett. 51, 212–214 (1987).
[CrossRef]

IEEE J. Quantum Electron.

P. R. Smith, D. H. Auston, M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron. 24, 255–260 (1988).
[CrossRef]

S. Gupta, J. F. Whitaker, G. A. Mourou, “Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures,” IEEE J. Quantum Electron. 28, 2464–2472 (1992).
[CrossRef]

J. T. Darrow, Xi-Cheng, D. H. Auston, J. D. Morse, “Saturation properties of large-aperture photoconducting antennas,” IEEE J. Quantum Electron. 28, 1607–1616 (1992).
[CrossRef]

J. Opt. Soc. Am.

Y. Yamada, A. Mitsuishi, H. Yoshinaga, “Transmission filters in the far-infrared region,” J. Opt. Soc. Am. 52, 17–19 (1962).
[CrossRef]

H. Harde, D. Grischkowsky, “Coherent transients excited by subpicosecond pulses of terahertz radiation,” J. Opt. Soc. Am. 8, 1642–1651 (1991).
[CrossRef]

J. Opt. Soc. Am. B

Jpn. J. Appl. Phys.

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33, 4807–4811 (1994).
[CrossRef]

Opt. Lett.

Thin Solid Films

D. C. Look, “Molecular beam epitaxial GaAs grown at low temperature,” Thin Solid Films 231, 61–73 (1993).
[CrossRef]

Other

D. Grischkowsky, N. Katzenellenbogen, “Femtosecond pulses of terahertz radiation: Physics and applications,” in Picosecond Electronics and Optoelectronics, T. C. L. G. Sollner, J. Shah, eds. Vol. 9 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1991) pp. 9–14.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (8)

Fig. 1
Fig. 1

Schematic view of (a) the photoconductive dipole antenna, (b) the bow-tie antenna, and (c) the photoconductive strip line.

Fig. 2
Fig. 2

Experimental setup for the generation and detection of THz radiation by photoconductive antennas.

Fig. 3
Fig. 3

(a) THz radiation pulse generated by the dipole I antenna on LT-GaAs and detected with the dipole III antenna on LT-GaAs. The vertical axis indicates the dc signal current detected by the photoconductive detector. (b) Fourier-transformed amplitude spectrum of Fig. 3(a).

Fig. 4
Fig. 4

(a) THz radiation pulses generated by the same types of dipole antennas (dipole II) fabricated on LT-GaAs (solid curve) and SI-GaAs (dashed curve) under the same conditions. (b) Fourier-transformed amplitude spectrum of Fig. 4(a)

Fig. 5
Fig. 5

(a) THz radiation pulse generated by the bow-tie antenna on LT-GaAs and detected with the dipole III antenna on LT-GaAs. The vertical axis indicates the dc signal current detected by the photoconductive detector. (b) Fourier-transformed amplitude spectrum of Fig. 5(a).

Fig. 6
Fig. 6

(a) THz radiation pulse generated by the biased strip line on LT-GaAs and detected with the dipole III antenna on LT-GaAs. The vertical axis indicates the dc signal current detected by the photoconductive detector. (b) Fourier-transformed amplitude spectrum of Fig. 6(a).

Fig. 7
Fig. 7

I - V curves measured for 5-µm gaps of LT-GaAs and SI-GaAs.

Fig. 8
Fig. 8

Pump-power dependencies of the radiation power for dipole I on LT-GaAs (open circles), bow tie on LT-GaAs (crosses), strip line on LT-GaAs (open triangles), and dipole I on SI-GaAs (open squares). The vertical axis represents the square root of the power P, and the data were arbitrarily normalized. The solid curve is the theoretical curve fitted to the data for dipole I on LT-GaAs.

Tables (2)

Tables Icon

Table 1 Dimensions of the Photoconductive Antennas

Tables Icon

Table 2 Radiation Powers of Photoconductive Antennas Measured by an InSb Hot-Electron Bolometer

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

Er, t=le4πc2rittsin θ,
νr=cλr=c2lee1/2=c2le1+d/21/2,
ErF/F01+F/F0,

Metrics