Infrared ellipsometry investigation of SiO _x N _y thin films on silicon

Abstract

The dielectric function $\tilde{\mathrm{\varepsilon }}$( $\tilde{\mathrm{\varepsilon }}$ = ɛ₁ + iɛ₂) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm⁻¹. The phase-separation model is unable to reproduce the experimental data. The dependence of $\tilde{\mathrm{\varepsilon }}$ on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO_{4− j}N_j (j = 0–4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen.

© 1996 Optical Society of America

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