Abstract

Angular dependencies of the scattered light intensity were measured on Si wafers that have different crystallographic orientations by using a He–Ne laser (λ = 632.8 nm, 80 μm spot diameter). During the experiment the Si wafer was fixed relative to the incident beam. Regular patterns were found in the azimuthal-angle-resolved scattering curves. Such patterns seem to be caused by the faceted shallow atomic structures of the surface.

© 1995 Optical Society of America

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