Abstract

We develop a downstream localized plasma-etching process that permits in situ monitoring of light throughput in a semiconductor-clad channel waveguide as the semiconductor thickness is trimmed. Hydrogenated amorphous silicon films are deposited on ion-exchanged channel waveguides by plasma-enhanced chemical vapor deposition. We then employ the localized plasma-etching process to maximize accurately the extinction ratio between TE and TM polarizations propagating in the clad waveguide. We achieve polarization extinction ratios of greater than 30 dB for both TE-pass and TM-pass polarizers.

© 1994 Optical Society of America

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References

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  1. R. F. Carson, T. E. Batchman, “Multimode phenomena in semiconductor-clad dielectric optical waveguide structures,” Appl. Opt. 29, 2769–2780 (1990).
    [CrossRef] [PubMed]
  2. D. L. Veasey, R. K. Hickernell, D. Larson, T. E. Batchman, “Waveguide polarizers with hydrogenated amorphous silicon claddings,” Opt. Lett. 16, 717–719 (1991).
    [CrossRef] [PubMed]
  3. R. J. Deri, E. C. M. Pennings, R. J. Hawkins, “Quenching of resonantly enhanced absorption by multimode interference in vertically coupled waveguide photodetectors,” Opt. Lett. 17, 667–669 (1992).
    [CrossRef] [PubMed]
  4. K. Kasper, P. P. Deimel, “Enhanced polarization-dependent coupling between an optical waveguide and a laterally coupled photodetector,” J. Appl. Phys. 70, 13–16 (1991).
    [CrossRef]
  5. D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.
  6. D. R. Larson, D. L. Veasey, “Localized plasma etching for device optimization,” J. Vac. Sci. Technol. B 10, 27–29 (1992).
    [CrossRef]
  7. R. B. Smith, G. L. Mitchell, “Calculation of complex propagating modes in arbitrary plane-layered, complex dielectric structures,” Rep. PB-277-152 (National Technical Information Service, Springfield, Va., 1972).

1992

1991

D. L. Veasey, R. K. Hickernell, D. Larson, T. E. Batchman, “Waveguide polarizers with hydrogenated amorphous silicon claddings,” Opt. Lett. 16, 717–719 (1991).
[CrossRef] [PubMed]

K. Kasper, P. P. Deimel, “Enhanced polarization-dependent coupling between an optical waveguide and a laterally coupled photodetector,” J. Appl. Phys. 70, 13–16 (1991).
[CrossRef]

1990

Batchman, T. E.

D. L. Veasey, R. K. Hickernell, D. Larson, T. E. Batchman, “Waveguide polarizers with hydrogenated amorphous silicon claddings,” Opt. Lett. 16, 717–719 (1991).
[CrossRef] [PubMed]

R. F. Carson, T. E. Batchman, “Multimode phenomena in semiconductor-clad dielectric optical waveguide structures,” Appl. Opt. 29, 2769–2780 (1990).
[CrossRef] [PubMed]

D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.

Carson, R. F.

Deimel, P. P.

K. Kasper, P. P. Deimel, “Enhanced polarization-dependent coupling between an optical waveguide and a laterally coupled photodetector,” J. Appl. Phys. 70, 13–16 (1991).
[CrossRef]

Deri, R. J.

Hawkins, R. J.

Hickernell, R. K.

Kasper, K.

K. Kasper, P. P. Deimel, “Enhanced polarization-dependent coupling between an optical waveguide and a laterally coupled photodetector,” J. Appl. Phys. 70, 13–16 (1991).
[CrossRef]

Larson, D.

Larson, D. R.

D. R. Larson, D. L. Veasey, “Localized plasma etching for device optimization,” J. Vac. Sci. Technol. B 10, 27–29 (1992).
[CrossRef]

D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.

Mitchell, G. L.

R. B. Smith, G. L. Mitchell, “Calculation of complex propagating modes in arbitrary plane-layered, complex dielectric structures,” Rep. PB-277-152 (National Technical Information Service, Springfield, Va., 1972).

Pennings, E. C. M.

Phelan, R. J.

D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.

Smith, R. B.

R. B. Smith, G. L. Mitchell, “Calculation of complex propagating modes in arbitrary plane-layered, complex dielectric structures,” Rep. PB-277-152 (National Technical Information Service, Springfield, Va., 1972).

Veasey, D. L.

D. R. Larson, D. L. Veasey, “Localized plasma etching for device optimization,” J. Vac. Sci. Technol. B 10, 27–29 (1992).
[CrossRef]

D. L. Veasey, R. K. Hickernell, D. Larson, T. E. Batchman, “Waveguide polarizers with hydrogenated amorphous silicon claddings,” Opt. Lett. 16, 717–719 (1991).
[CrossRef] [PubMed]

D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.

Appl. Opt.

J. Appl. Phys.

K. Kasper, P. P. Deimel, “Enhanced polarization-dependent coupling between an optical waveguide and a laterally coupled photodetector,” J. Appl. Phys. 70, 13–16 (1991).
[CrossRef]

J. Vac. Sci. Technol. B

D. R. Larson, D. L. Veasey, “Localized plasma etching for device optimization,” J. Vac. Sci. Technol. B 10, 27–29 (1992).
[CrossRef]

Opt. Lett.

Other

R. B. Smith, G. L. Mitchell, “Calculation of complex propagating modes in arbitrary plane-layered, complex dielectric structures,” Rep. PB-277-152 (National Technical Information Service, Springfield, Va., 1972).

D. L. Veasey, D. R. Larson, R. J. Phelan, T. E. Batchman, “Semiconductor claddings on glass waveguides for polarizers and detectors,” in Annual Meeting, Vol. 15 of 1990 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1990), p. 1.

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Figures (4)

Fig. 1
Fig. 1

Schematic diagram of the localized plasma-etching process chamber and experimental setup with a magnified section view of the waveguide cladding region.

Fig. 2
Fig. 2

Experimental measurement of throughput signal versus time of etch for TE and TM polarizations.

Fig. 3
Fig. 3

Theoretical calculation of attenuation for an α-Si:H cladding with a complex refractive index of 3.82–j0.03 at a wavelength of 670 nm. The calculation was performed by using a matrix method for planar waveguide geometries.

Fig. 4
Fig. 4

TM/TE ratio obtained from the data of Fig. 2, showing that 30-dB polarization extinction ratios can be obtained for both TE-pass and TM-pass waveguide polarizers.

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