Abstract

Langmuir–Blodgett films of tetra-neopentoxy phthalocyanine zinc (TNPPcZn) were prepared. Static optical recording behavior was tested in the Langmuir-Blodgett films of TNPPcZn. The reflectivity contrast was more than 100% in a writing and erasing cycle experiment. This is the first time to our knowledge that writing and erasing experimental data have been obtained in TNPPcZn film.

© 1994 Optical Society of America

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References

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  1. P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
    [CrossRef]
  2. A. Bloom, W. J. Burke, “Ablative optical recording medium,” U.S. patent4,241,355 (1980).
  3. K. Tanikawa, “Optical information recording medium,” U.S. patent4,458,004 (1984).
  4. K. Y. Law, G. E. Johnson, J. W. P. Lin, “Ablative infrared sensitive devices containing soluble naphthalocyanine dyes,” U.S. patent4,492,750 (1985).
  5. D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).
  6. T. Luo, W. Zheng, F. Gan, “Structure change of Langmuir–Blodgett film of tetra-neopentoxy phthalocyanine zinc during heat treatment,” Opt. Mater. (to be published).

1981 (1)

P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
[CrossRef]

Bloom, A.

A. Bloom, W. J. Burke, “Ablative optical recording medium,” U.S. patent4,241,355 (1980).

Bont, R.

P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
[CrossRef]

Burke, W. J.

A. Bloom, W. J. Burke, “Ablative optical recording medium,” U.S. patent4,241,355 (1980).

Chiang, K.

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

Gan, F.

T. Luo, W. Zheng, F. Gan, “Structure change of Langmuir–Blodgett film of tetra-neopentoxy phthalocyanine zinc during heat treatment,” Opt. Mater. (to be published).

Goldberg, H. A.

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

Johnson, G. E.

K. Y. Law, G. E. Johnson, J. W. P. Lin, “Ablative infrared sensitive devices containing soluble naphthalocyanine dyes,” U.S. patent4,492,750 (1985).

Kivits, P.

P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
[CrossRef]

Kohn, R. S.

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

Law, K. Y.

K. Y. Law, G. E. Johnson, J. W. P. Lin, “Ablative infrared sensitive devices containing soluble naphthalocyanine dyes,” U.S. patent4,492,750 (1985).

Lin, J. W. P.

K. Y. Law, G. E. Johnson, J. W. P. Lin, “Ablative infrared sensitive devices containing soluble naphthalocyanine dyes,” U.S. patent4,492,750 (1985).

Luo, T.

T. Luo, W. Zheng, F. Gan, “Structure change of Langmuir–Blodgett film of tetra-neopentoxy phthalocyanine zinc during heat treatment,” Opt. Mater. (to be published).

Nikiles, D. E.

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

Onorato, F. J.

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

Tanikawa, K.

K. Tanikawa, “Optical information recording medium,” U.S. patent4,458,004 (1984).

Veen, J. V.

P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
[CrossRef]

Zheng, W.

T. Luo, W. Zheng, F. Gan, “Structure change of Langmuir–Blodgett film of tetra-neopentoxy phthalocyanine zinc during heat treatment,” Opt. Mater. (to be published).

Appl. Phys. A (1)

P. Kivits, R. Bont, J. V. Veen, “Vanadyl phthalocyanine: an organic material for optical data recording,” Appl. Phys. A 26, 101–105 (1981).
[CrossRef]

Other (5)

A. Bloom, W. J. Burke, “Ablative optical recording medium,” U.S. patent4,241,355 (1980).

K. Tanikawa, “Optical information recording medium,” U.S. patent4,458,004 (1984).

K. Y. Law, G. E. Johnson, J. W. P. Lin, “Ablative infrared sensitive devices containing soluble naphthalocyanine dyes,” U.S. patent4,492,750 (1985).

D. E. Nikiles, K. Chiang, H. A. Goldberg, R. S. Kohn, F. J. Onorato, “Naphthalocyanine chromophores for worm-type optical data storage media,” in Storage and Retrieval Systems and Applications, D. H. Davies, H. D. Shieh, eds., Proc. Soc. Photo-Opt. Instrum. Eng.1248, 65–73 (1990).

T. Luo, W. Zheng, F. Gan, “Structure change of Langmuir–Blodgett film of tetra-neopentoxy phthalocyanine zinc during heat treatment,” Opt. Mater. (to be published).

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Figures (7)

Fig. 1
Fig. 1

Structure of TNPPcZn.

Fig. 2
Fig. 2

Reflection spectra of the LB film of TNPPcZn deposited on an Al layer treated at different temperatures.

Fig. 3
Fig. 3

Dependence of reflectivity contrast on the writing energy (91.0-nm-thick film).

Fig. 4
Fig. 4

Dependence of reflectivity contrast on the writing energy (20.0 nm thick film).

Fig. 5
Fig. 5

Laser-writing bit (8000×) on a 43.7-nm-thick TNPPcZn LB film (15 mW, 500 ns).

Fig. 6
Fig. 6

Readout times dependence of reflectance of recording bit.

Fig. 7
Fig. 7

Writing and erasing properties of the TNPPcZn LB film, writing (17 mW, 350 ns) and erasing (11.3 mW, 2 μs).

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