Abstract

We have fabricated and tested an UV radiation detector by using a metal-oxide-semiconductor capacitor in the deep depletion mode with a semitransparent chromium electrode deposited on an oxidized silicon wafer. The quantum efficiency of the device is sensitive to the metal-layer thickness, since it absorbs part of the beam energy. Efficiency values of the order of 25–40% are obtained between 2 and 6 eV with a 10-nm chromium electrode. A model of the device efficiency is given, including effects of optical multiple reflection, electron–hole creation, and collecting yield.

© 1994 Optical Society of America

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