Abstract

Simple expressions are derived to evaluate the lasing condition and power characteristics of unstable-resonator semiconductor lasers (URSL’s). The gain–loss characteristics of several quantum-well materials are summarized and found to be important for URSL design considerations. To optimize URSL performance, the cavity length needs to approach an optimum value, which varies from ~ 300 μm for an InGaAs/GaAs graded-index separate-confinement-heterostructure single-quantum-well (GRINSCH-SQW) to ~ 1000 μm for GaInP/AlGaInP GRINSCH-SQW materials. A set of high-power (1-W, double-mirror, pulsed) 660-nm wavelength GaInP/AlGaInP URSL’s with magnification of 2.5 were fabricated using focused-ion-beam micromachining technology. The brightness of a 300 μm × 1500 μm URSL approaches 320 MW cm−2 Sr−1 at a pump current of 3000 mA.

© 1993 Optical Society of America

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