Abstract

We determine the quality of single films of various oxides, which are deposited on thermally oxidized silicon wafers by reactive low-voltage ion plating (RLVIP), by measuring their optical waveguide losses. We use a prism coupler for inserting the radiation of a wavelength-selectable He–Ne laser into the waveguide and a CCD camera for imaging the light scattered from the surface of the films. The waveguide losses of the RLVIP films are typically of the order of 1 to 10 dB/cm. Some data obtained for TiO2 layers on thermally grown SiO2 and RLVIP SiO2 seem to confirm the presence of an absorbing boundary layer between RLVIP SiO2 and TiO2 that has been found in SiO2–TiO2 multilayers. The waveguide measurements also reveal unusual index gradients in thick (∼10 μm) single layers of Al2O3 derived from multimode effective index calculations.

© 1993 Optical Society of America

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