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Simulation of thin-film growth

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Abstract

A two-dimensional simulation model of thin-film deposition, which involves the effect of the incident kinetic energy of atoms and the mobility of the substrate temperature, is developed. Lennard–Jones potential and nuclear scattering are used to characterize the atom–atom interaction. The effect of substrate temperature on the relaxation of depositing particles is also considered. Some simulation results are presented and discussed in detail.

© 1993 Optical Society of America

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