Abstract

The propagation of errors in the model parameters is compared for cases that analyze a simple separation by ion implantation of oxygen structure by using reflectometry and ellipsometry. Both methods give comparable values for the layer thicknesses. Both the radius of convergence and the values of uncertainty tend to be larger with reflectometry than with ellipsometry.

© 1992 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. E. W. Palik, ed., Handbook of Optical Constants of Solids (Academic, Orlando, Fla., 1985).
  2. D. A. G. Bruggeman, “Calculation of the various physical constants of heterogeneous constants,” Ann. Phys. Ser. 5 24, 636–664 (1935).
    [CrossRef]
  3. R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).
  4. J. F. Marchiando, “Semiconductor measurement technology: a software program for aiding the analysis of ellipsometric measurements, simple spectroscopic models,” NIST Spec. Publ. 400–84 (National Institute of Standards and Technology, Washington, D.C., 1989).

1935

D. A. G. Bruggeman, “Calculation of the various physical constants of heterogeneous constants,” Ann. Phys. Ser. 5 24, 636–664 (1935).
[CrossRef]

Azzam, R. M. A.

R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).

Bashara, N. M.

R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).

Bruggeman, D. A. G.

D. A. G. Bruggeman, “Calculation of the various physical constants of heterogeneous constants,” Ann. Phys. Ser. 5 24, 636–664 (1935).
[CrossRef]

Marchiando, J. F.

J. F. Marchiando, “Semiconductor measurement technology: a software program for aiding the analysis of ellipsometric measurements, simple spectroscopic models,” NIST Spec. Publ. 400–84 (National Institute of Standards and Technology, Washington, D.C., 1989).

Ann. Phys. Ser. 5

D. A. G. Bruggeman, “Calculation of the various physical constants of heterogeneous constants,” Ann. Phys. Ser. 5 24, 636–664 (1935).
[CrossRef]

Other

R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).

J. F. Marchiando, “Semiconductor measurement technology: a software program for aiding the analysis of ellipsometric measurements, simple spectroscopic models,” NIST Spec. Publ. 400–84 (National Institute of Standards and Technology, Washington, D.C., 1989).

E. W. Palik, ed., Handbook of Optical Constants of Solids (Academic, Orlando, Fla., 1985).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (2)

Fig. 1
Fig. 1

Profile of the rms residual as a function of the top-layer thickness for reflectometry. The thickness of the buried a-SiO2 layer is 200 nm. The radius of convergence, indicated by the arrows, is nearly 28 nm.

Fig. 2
Fig. 2

Profile of the rms residual as a function of the top-layer thickness for ellipsometry. The thickness of the buried a-SiO2 layer is 200 nm. The radius of convergence, indicated by the arrows, is nearly 7 nm.

Tables (1)

Tables Icon

Table I Results of Calculations of the Seven Cases of Modeled Silicona

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

n m - Si = α n c - Si , k m - Si = β k c - Si ,
0 = i = 1 N f i ( i m - Si i + 2 m - Si )
i = 1 N f i = 1 ,

Metrics