Abstract

A method is proposed in which the responsivity (A/lm) for the photometric quantity of a silicon photodiode, which is combined with a V(λ) filter of a known spectral transmittance, can be directly self-calibrated by measuring the surface reflectance and the recombination losses of the photodiode for white light. The derived equation for this method assumes approximations that can cause systematic errors. A computer simulation was made to quantify these errors, and an accuracy of better than 0.2% was predicted. Although experimental validation is necessary, this method is promising as a new, practical method for high-accuracy photometric standards.

© 1992 Optical Society of America

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. E. F. Zalewski, J. Geist, “Silicon photodiode absolute spectral response self-calibration,” Appl. Opt. 19, 1214–1216 (1980).
    [CrossRef] [PubMed]
  2. J. Geist, E. Liang, A. R. Schaefer, “Complete collection of minority carriers from the inversion layer in induced junction diodes,” J. Appl. Phys. 52(7), 4879–4881 (1981).
    [CrossRef]
  3. R. L. Booker, J. Geist, “Induced junction (inversion layer) photodiode self-calibration,” Appl. Opt. 23, 1940–1945 (1984).
    [CrossRef] [PubMed]
  4. L. Gardner, W. J. Brown, “Silicon radiometry compared with the Australian radiometric scale,” Appl. Opt. 26, 2431–2435 (1987).
    [CrossRef] [PubMed]
  5. R. J. Bruening, “Spectral irradiance scales based on filtered absolute silicon photodetectors,” Appl. Opt. 26, 1051–1057 (1987).
    [CrossRef] [PubMed]
  6. M. Yoshida, H. Nishiyama, K. Yoshie, “Measurement of luminous intensity by the self-calibration technique,” J. Illum. Eng. Inst. Jpn. 71, 618–621 (1987).
  7. G. Eppeldauer, “Long-term changes of silicon photodiodes and their use for photometric standardization,” Appl. Opt. 29, 2289–2294 (1990).
    [CrossRef] [PubMed]
  8. Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).
  9. J. Geist, E. F. Zalewski, A. R. Schaefer, “Spectral response self-calibration and interpolation of silicon photodiodes,” Appl. Opt. 19, 3795–3799 (1980).
    [CrossRef] [PubMed]
  10. T. Huen, “Reflectance of thinly oxidized silicon at normal incidence,” Appl. Opt. 18, 1927–1932 (1979).
    [CrossRef] [PubMed]
  11. A. R. Schaefer, J. Geist, “Spatial uniformity of quantum efficiency of a silicon photovoltaic detector,” Appl. Opt. 18, 1933–1936 (1979).
    [CrossRef] [PubMed]

1991 (1)

Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).

1990 (1)

1987 (3)

1984 (1)

1981 (1)

J. Geist, E. Liang, A. R. Schaefer, “Complete collection of minority carriers from the inversion layer in induced junction diodes,” J. Appl. Phys. 52(7), 4879–4881 (1981).
[CrossRef]

1980 (2)

1979 (2)

Booker, R. L.

Brown, W. J.

Bruening, R. J.

Eppeldauer, G.

Gardner, L.

Geist, J.

Huen, T.

Liang, E.

J. Geist, E. Liang, A. R. Schaefer, “Complete collection of minority carriers from the inversion layer in induced junction diodes,” J. Appl. Phys. 52(7), 4879–4881 (1981).
[CrossRef]

Nishiyama, H.

Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).

M. Yoshida, H. Nishiyama, K. Yoshie, “Measurement of luminous intensity by the self-calibration technique,” J. Illum. Eng. Inst. Jpn. 71, 618–621 (1987).

Ohno, Y.

Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).

Schaefer, A. R.

Suzuki, K.

Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).

Yoshida, M.

M. Yoshida, H. Nishiyama, K. Yoshie, “Measurement of luminous intensity by the self-calibration technique,” J. Illum. Eng. Inst. Jpn. 71, 618–621 (1987).

Yoshie, K.

M. Yoshida, H. Nishiyama, K. Yoshie, “Measurement of luminous intensity by the self-calibration technique,” J. Illum. Eng. Inst. Jpn. 71, 618–621 (1987).

Zalewski, E. F.

Appl. Opt. (8)

J. Appl. Phys. (1)

J. Geist, E. Liang, A. R. Schaefer, “Complete collection of minority carriers from the inversion layer in induced junction diodes,” J. Appl. Phys. 52(7), 4879–4881 (1981).
[CrossRef]

J. Illum. Eng. Inst. Jpn. (2)

M. Yoshida, H. Nishiyama, K. Yoshie, “Measurement of luminous intensity by the self-calibration technique,” J. Illum. Eng. Inst. Jpn. 71, 618–621 (1987).

Y. Ohno, K. Suzuki, H. Nishiyama, “Determination of the photometric quantities based on the silicon photodiode absolute responsivity measurement and its accuracy,” J. Illum. Eng. Inst. Jpn. 75, 571–576 (1991).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Metrics