Abstract

We use a backdiffracted beam from a grating to establish accurately ellipsometric angles of incidence in configurations where samples cannot be accessed directly.

© 1992 Optical Society of America

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References

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  1. See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
    [CrossRef]
  2. E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
    [CrossRef]
  3. M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1975), p. 403.

1991 (1)

See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
[CrossRef]

1990 (1)

E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
[CrossRef]

Aspnes, E.

E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
[CrossRef]

Born, M.

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1975), p. 403.

Gregory, S.

E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
[CrossRef]

Quinn, W. E.

E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
[CrossRef]

Snyder, P. G.

See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
[CrossRef]

Wolf, E.

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1975), p. 403.

Woollam, J. A.

See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
[CrossRef]

Yao, H.

See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
[CrossRef]

Appl. Phys. Lett. (1)

E. Aspnes, W. E. Quinn, S. Gregory, "Optical control of growth of Alx Ga1−xAs by organometallic molecular beam epitaxy,"Appl. Phys. Lett. 57, 2707–2709 (1990).
[CrossRef]

J. Appl. Phys. (1)

See, e.g., H. Yao, P. G. Snyder, J. A. Woollam, “Temperature dependence of optical properties of GaAs,” J. Appl. Phys. 70, 3261–3267 (1991).
[CrossRef]

Other (1)

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1975), p. 403.

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Figures (1)

Fig. 1
Fig. 1

Schematic of the grating method of determining ϕi, here shown with the intention of collimating the incident and second-order beam backdiffracted from the grating. Viewports are indicated schematically to represent typical constraints that are encountered in applications to growth and processing.

Equations (3)

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ϕ i = ϕ 0 ,
d sin ϕ i d sin ϕ 1 = λ ,
d sin ϕ i + d sin ϕ 2 = 2 λ ,

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