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Nonlinear refractive index of IV–IV compound semiconductors

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Abstract

An Eg−4 scaling law is used to estimate the intensity-dependent refractive index n2 of the new binary zinc blende semiconductors GeC, β-SiC, SiGe, SnC, SiSn, and GeSn from known n2 values for Si and Ge.

© 1992 Optical Society of America

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