Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 &lt; λ &lt; 2.2 μm

J. W. Sulhoff; J. L. Zyskind; C. A. Burrus; J. C. DeWinter; M. A. Pollack; J. C. Centanni

doi:10.1364/AO.31.003398

Applied Optics
Vol. 31,
Issue 18,
pp. 3398-3400
(1992)
•https://doi.org/10.1364/AO.31.003398

Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 < λ < 2.2 μm

J. W. Sulhoff, J. L. Zyskind, C. A. Burrus, J. C. DeWinter, M. A. Pollack, and J. C. Centanni

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J. W. Sulhoff, J. L. Zyskind, C. A. Burrus, J. C. DeWinter, M. A. Pollack, and J. C. Centanni, "Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 < λ < 2.2 μm," Appl. Opt. 31, 3398-3400 (1992)

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Abstract

A group of 126 experimental, packaged, backilluminated, 1.75–2.2-μm wavelength, GaInAsSb mesa (~85-μm diameter) photodetectors have been assembled and evaluated. Average room-temperature properties were peak quantum efficiency, 86%; zero-bias capacitance, 3.9 pF; dark current at −0.5-V bias, 7.4 μA.

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Applied Optics