Abstract

A correlation between the spectral output of 1.3 μm InGaAsP semiconductor diode lasers and the distribution along the length and width of the active region of strain and scattering centers is reported. The strain and scattering center distributions in the active region were obtained by measuring and analyzing the spatially resolved and polarization resolved electroluminescence along the active region of the lasers. Measurements were made on gain-guided, planar buried heterostructure, and arrowhead buried crescent lasers. The results suggest that the material properties of the laser structure affect the longitudinal mode spectrum.

© 1991 Optical Society of America

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References

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  1. M. Yamada, Y. Suematsu, “Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-Band Relaxation,” in Proceedings, Tenth Conference on Solid State Devices (Tokyo, 1970); Jap. J. Appl. Phys. 18 Supplement 18-1, 347–354 (1979).
  2. R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
    [Crossref]
  3. M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
    [Crossref]
  4. M. Yamada, Y. Suematsu, “Analysis of Gain Suppression in Undoped Injection Lasers,” J. Appl. Phys. 52, 2653–2664 (1981).
    [Crossref]
  5. K. Petermann, “Calculated Spontaneous Emission Factor for Double-Heterostructure Injection Lasers with Gain-Induced Waveguiding,” IEEE J. Quantum Electron. QE-15, 566–570 (1979).
    [Crossref]
  6. A. Yariv, S. Margalit, “On Spontaneous Emission into Guided Modes With Curved Wavefronts,” IEEE J. Quantum Electron. QE-18, 1831–1832 (1982).
    [Crossref]
  7. E. Patzak, “Spontaneous Emission Factor of Narrow-Stripe Gain-Guided Diode Lasers,” Electron. Lett. 18, 278–279 (1982).
    [Crossref]
  8. D. Marcuse, “Quantum Mechanical Explanation of Spontaneous Emission K-Factor,” Electron. Lett. 18, 920–922 (1982).
    [Crossref]
  9. T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
    [Crossref]
  10. G. P. Agrawal, “Heuristic Approach to Spontaneous Emission Factor of Gain-Guided Lasers,” J. Opt. Soc. Am. B 1, 406–408 (1984).
    [Crossref]
  11. J. C. Dyment, “Hermite-Gaussian Mode Patterns in GaAs Junction Lasers,” Appl. Phys. Lett. 10, 84–86 (1967).
    [Crossref]
  12. I. Mito et al., “InGaAsP Double-Channel-Planar-Buried Heterostructure Laser Diode (DC-PBH LD) With Effective Current Confinement,” IEEE/OSA J. Lightwave Technol. LT-1, 195–201 (1983).
    [Crossref]
  13. E. Oomura et al., “InGaAsP/InP Buried Crescent Laser Diode Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-20, 866–873 (1984).
    [Crossref]
  14. H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
    [Crossref]
  15. C. S. Adams, D. T. Cassidy, “Effects of Stress on Threshold, Wavelength and Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” J. Appl. Phys. 64, 6631–6638 (1988).
    [Crossref]
  16. D. T. Cassidy, C. S. Adams, “Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” IEEE J. Quantum Electron. QE-25, 1156–1160 (1989).
    [Crossref]
  17. L. A. Coldren, T. L. Koch, “Analysis and Design of Coupled-Cavity Lasers—Part 1: Threshold Gain Analysis and Design Guidelines,” IEEE J. Quantum Electron. QE-20, 659–670 (1984).
    [Crossref]
  18. F. H. Peters, D. T. Cassidy, “Model of the Spectral Output of Gain-Guided and Index-Guided Semiconductor Diode Lasers,” J. Opt. Soc. Am. B 8, 99–105 (1991).
    [Crossref]
  19. F. H. Peters, D. T. Cassidy, “Spatially-Resolved and Polarization-Resolved Electroluminescence of 1.3-μm InGaAsP Semiconductor Diode Lasers,” Conference on Lasers and Electro-Optics, 1989 Technical Digest Series, Vol. 11 (Optical Society of America, Washington, DC, 1989), p. 298.
  20. F. H. Peters, D. T. Cassidy, “Spatially- and Polarization-Resolved Electroluminescence of 1.3 μm InGaAsP Semiconductor Diode Lasers,” Appl. Opt. 28, 3744–3750 (1989).
    [Crossref] [PubMed]

1991 (1)

1989 (2)

F. H. Peters, D. T. Cassidy, “Spatially- and Polarization-Resolved Electroluminescence of 1.3 μm InGaAsP Semiconductor Diode Lasers,” Appl. Opt. 28, 3744–3750 (1989).
[Crossref] [PubMed]

D. T. Cassidy, C. S. Adams, “Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” IEEE J. Quantum Electron. QE-25, 1156–1160 (1989).
[Crossref]

1988 (1)

C. S. Adams, D. T. Cassidy, “Effects of Stress on Threshold, Wavelength and Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” J. Appl. Phys. 64, 6631–6638 (1988).
[Crossref]

1984 (3)

L. A. Coldren, T. L. Koch, “Analysis and Design of Coupled-Cavity Lasers—Part 1: Threshold Gain Analysis and Design Guidelines,” IEEE J. Quantum Electron. QE-20, 659–670 (1984).
[Crossref]

G. P. Agrawal, “Heuristic Approach to Spontaneous Emission Factor of Gain-Guided Lasers,” J. Opt. Soc. Am. B 1, 406–408 (1984).
[Crossref]

E. Oomura et al., “InGaAsP/InP Buried Crescent Laser Diode Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-20, 866–873 (1984).
[Crossref]

1983 (1)

I. Mito et al., “InGaAsP Double-Channel-Planar-Buried Heterostructure Laser Diode (DC-PBH LD) With Effective Current Confinement,” IEEE/OSA J. Lightwave Technol. LT-1, 195–201 (1983).
[Crossref]

1982 (6)

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[Crossref]

A. Yariv, S. Margalit, “On Spontaneous Emission into Guided Modes With Curved Wavefronts,” IEEE J. Quantum Electron. QE-18, 1831–1832 (1982).
[Crossref]

E. Patzak, “Spontaneous Emission Factor of Narrow-Stripe Gain-Guided Diode Lasers,” Electron. Lett. 18, 278–279 (1982).
[Crossref]

D. Marcuse, “Quantum Mechanical Explanation of Spontaneous Emission K-Factor,” Electron. Lett. 18, 920–922 (1982).
[Crossref]

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

1981 (1)

M. Yamada, Y. Suematsu, “Analysis of Gain Suppression in Undoped Injection Lasers,” J. Appl. Phys. 52, 2653–2664 (1981).
[Crossref]

1979 (1)

K. Petermann, “Calculated Spontaneous Emission Factor for Double-Heterostructure Injection Lasers with Gain-Induced Waveguiding,” IEEE J. Quantum Electron. QE-15, 566–570 (1979).
[Crossref]

1978 (1)

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

1967 (1)

J. C. Dyment, “Hermite-Gaussian Mode Patterns in GaAs Junction Lasers,” Appl. Phys. Lett. 10, 84–86 (1967).
[Crossref]

Adams, C. S.

D. T. Cassidy, C. S. Adams, “Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” IEEE J. Quantum Electron. QE-25, 1156–1160 (1989).
[Crossref]

C. S. Adams, D. T. Cassidy, “Effects of Stress on Threshold, Wavelength and Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” J. Appl. Phys. 64, 6631–6638 (1988).
[Crossref]

Agrawal, G. P.

Aiki, K.

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

Burrus, C. A.

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

Cassidy, D. T.

F. H. Peters, D. T. Cassidy, “Model of the Spectral Output of Gain-Guided and Index-Guided Semiconductor Diode Lasers,” J. Opt. Soc. Am. B 8, 99–105 (1991).
[Crossref]

F. H. Peters, D. T. Cassidy, “Spatially- and Polarization-Resolved Electroluminescence of 1.3 μm InGaAsP Semiconductor Diode Lasers,” Appl. Opt. 28, 3744–3750 (1989).
[Crossref] [PubMed]

D. T. Cassidy, C. S. Adams, “Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” IEEE J. Quantum Electron. QE-25, 1156–1160 (1989).
[Crossref]

C. S. Adams, D. T. Cassidy, “Effects of Stress on Threshold, Wavelength and Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” J. Appl. Phys. 64, 6631–6638 (1988).
[Crossref]

F. H. Peters, D. T. Cassidy, “Spatially-Resolved and Polarization-Resolved Electroluminescence of 1.3-μm InGaAsP Semiconductor Diode Lasers,” Conference on Lasers and Electro-Optics, 1989 Technical Digest Series, Vol. 11 (Optical Society of America, Washington, DC, 1989), p. 298.

Chinone, N.

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

Coldren, L. A.

L. A. Coldren, T. L. Koch, “Analysis and Design of Coupled-Cavity Lasers—Part 1: Threshold Gain Analysis and Design Guidelines,” IEEE J. Quantum Electron. QE-20, 659–670 (1984).
[Crossref]

Dentai, A. G.

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

Dyment, J. C.

J. C. Dyment, “Hermite-Gaussian Mode Patterns in GaAs Junction Lasers,” Appl. Phys. Lett. 10, 84–86 (1967).
[Crossref]

Henry, C. H.

R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[Crossref]

Hori, K.-I.

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

Imai, H.

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

Ishikawa, H.

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

Ito, R.

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

Kazarinov, R. F.

R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[Crossref]

Koch, T. L.

L. A. Coldren, T. L. Koch, “Analysis and Design of Coupled-Cavity Lasers—Part 1: Threshold Gain Analysis and Design Guidelines,” IEEE J. Quantum Electron. QE-20, 659–670 (1984).
[Crossref]

Lee, T. P.

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

Logan, R. A.

R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[Crossref]

Marcuse, D.

D. Marcuse, “Quantum Mechanical Explanation of Spontaneous Emission K-Factor,” Electron. Lett. 18, 920–922 (1982).
[Crossref]

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

Margalit, S.

A. Yariv, S. Margalit, “On Spontaneous Emission into Guided Modes With Curved Wavefronts,” IEEE J. Quantum Electron. QE-18, 1831–1832 (1982).
[Crossref]

Mito, I.

I. Mito et al., “InGaAsP Double-Channel-Planar-Buried Heterostructure Laser Diode (DC-PBH LD) With Effective Current Confinement,” IEEE/OSA J. Lightwave Technol. LT-1, 195–201 (1983).
[Crossref]

Nakamura, M.

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

Nelson, R. J.

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

Oomura, E.

E. Oomura et al., “InGaAsP/InP Buried Crescent Laser Diode Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-20, 866–873 (1984).
[Crossref]

Patzak, E.

E. Patzak, “Spontaneous Emission Factor of Narrow-Stripe Gain-Guided Diode Lasers,” Electron. Lett. 18, 278–279 (1982).
[Crossref]

Petermann, K.

K. Petermann, “Calculated Spontaneous Emission Factor for Double-Heterostructure Injection Lasers with Gain-Induced Waveguiding,” IEEE J. Quantum Electron. QE-15, 566–570 (1979).
[Crossref]

Peters, F. H.

F. H. Peters, D. T. Cassidy, “Model of the Spectral Output of Gain-Guided and Index-Guided Semiconductor Diode Lasers,” J. Opt. Soc. Am. B 8, 99–105 (1991).
[Crossref]

F. H. Peters, D. T. Cassidy, “Spatially- and Polarization-Resolved Electroluminescence of 1.3 μm InGaAsP Semiconductor Diode Lasers,” Appl. Opt. 28, 3744–3750 (1989).
[Crossref] [PubMed]

F. H. Peters, D. T. Cassidy, “Spatially-Resolved and Polarization-Resolved Electroluminescence of 1.3-μm InGaAsP Semiconductor Diode Lasers,” Conference on Lasers and Electro-Optics, 1989 Technical Digest Series, Vol. 11 (Optical Society of America, Washington, DC, 1989), p. 298.

Suematsu, Y.

M. Yamada, Y. Suematsu, “Analysis of Gain Suppression in Undoped Injection Lasers,” J. Appl. Phys. 52, 2653–2664 (1981).
[Crossref]

M. Yamada, Y. Suematsu, “Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-Band Relaxation,” in Proceedings, Tenth Conference on Solid State Devices (Tokyo, 1970); Jap. J. Appl. Phys. 18 Supplement 18-1, 347–354 (1979).

Takahei, K.

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

Tanahashi, T.

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

Umeda, J.

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

Yamada, M.

M. Yamada, Y. Suematsu, “Analysis of Gain Suppression in Undoped Injection Lasers,” J. Appl. Phys. 52, 2653–2664 (1981).
[Crossref]

M. Yamada, Y. Suematsu, “Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-Band Relaxation,” in Proceedings, Tenth Conference on Solid State Devices (Tokyo, 1970); Jap. J. Appl. Phys. 18 Supplement 18-1, 347–354 (1979).

Yariv, A.

A. Yariv, S. Margalit, “On Spontaneous Emission into Guided Modes With Curved Wavefronts,” IEEE J. Quantum Electron. QE-18, 1831–1832 (1982).
[Crossref]

Appl. Opt. (1)

Appl. Phys. Lett. (1)

J. C. Dyment, “Hermite-Gaussian Mode Patterns in GaAs Junction Lasers,” Appl. Phys. Lett. 10, 84–86 (1967).
[Crossref]

Electron. Lett. (3)

E. Patzak, “Spontaneous Emission Factor of Narrow-Stripe Gain-Guided Diode Lasers,” Electron. Lett. 18, 278–279 (1982).
[Crossref]

D. Marcuse, “Quantum Mechanical Explanation of Spontaneous Emission K-Factor,” Electron. Lett. 18, 920–922 (1982).
[Crossref]

T. P. Lee, C. A. Burrus, D. Marcuse, A. G. Dentai, R. J. Nelson, “Measurement of Beam Parameters of Index-Guided and Gain-Guided Single-Frequency InGaAsP Injection Lasers,” Electron. Lett. 18, 902–904 (1982).
[Crossref]

IEEE J. Quantum Electron. (6)

K. Petermann, “Calculated Spontaneous Emission Factor for Double-Heterostructure Injection Lasers with Gain-Induced Waveguiding,” IEEE J. Quantum Electron. QE-15, 566–570 (1979).
[Crossref]

A. Yariv, S. Margalit, “On Spontaneous Emission into Guided Modes With Curved Wavefronts,” IEEE J. Quantum Electron. QE-18, 1831–1832 (1982).
[Crossref]

E. Oomura et al., “InGaAsP/InP Buried Crescent Laser Diode Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-20, 866–873 (1984).
[Crossref]

H. Ishikawa, H. Imai, T. Tanahashi, K.-I. Hori, K. Takahei, “V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 μm Wavelength,” IEEE J. Quantum Electron. QE-18, 1704–1711 (1982).
[Crossref]

D. T. Cassidy, C. S. Adams, “Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” IEEE J. Quantum Electron. QE-25, 1156–1160 (1989).
[Crossref]

L. A. Coldren, T. L. Koch, “Analysis and Design of Coupled-Cavity Lasers—Part 1: Threshold Gain Analysis and Design Guidelines,” IEEE J. Quantum Electron. QE-20, 659–670 (1984).
[Crossref]

IEEE/OSA J. Lightwave Technol. (1)

I. Mito et al., “InGaAsP Double-Channel-Planar-Buried Heterostructure Laser Diode (DC-PBH LD) With Effective Current Confinement,” IEEE/OSA J. Lightwave Technol. LT-1, 195–201 (1983).
[Crossref]

J. Appl. Phys. (4)

C. S. Adams, D. T. Cassidy, “Effects of Stress on Threshold, Wavelength and Polarization of the Output of InGaAsP Semiconductor Diode Lasers,” J. Appl. Phys. 64, 6631–6638 (1988).
[Crossref]

R. F. Kazarinov, C. H. Henry, R. A. Logan, “Longitudinal Mode Self-Stabilization in Semiconductor Lasers,” J. Appl. Phys. 53, 4631–4644 (1982).
[Crossref]

M. Nakamura, K. Aiki, N. Chinone, R. Ito, J. Umeda, “Longitudinal-Mode Behaviours of Mode-Stabilized Alx-Ga1−xAs Injection Lasers,” J. Appl. Phys. 49, 4644–4648 (1978).
[Crossref]

M. Yamada, Y. Suematsu, “Analysis of Gain Suppression in Undoped Injection Lasers,” J. Appl. Phys. 52, 2653–2664 (1981).
[Crossref]

J. Opt. Soc. Am. B (2)

Other (2)

F. H. Peters, D. T. Cassidy, “Spatially-Resolved and Polarization-Resolved Electroluminescence of 1.3-μm InGaAsP Semiconductor Diode Lasers,” Conference on Lasers and Electro-Optics, 1989 Technical Digest Series, Vol. 11 (Optical Society of America, Washington, DC, 1989), p. 298.

M. Yamada, Y. Suematsu, “Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-Band Relaxation,” in Proceedings, Tenth Conference on Solid State Devices (Tokyo, 1970); Jap. J. Appl. Phys. 18 Supplement 18-1, 347–354 (1979).

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Figures (7)

Fig. 1
Fig. 1

Degree of polarization (ρ) distribution along the active region of a PBH laser (laser F) for (a) above threshold operation and (b) below threshold operation.

Fig. 2
Fig. 2

Distribution of ρ along the active region of an ABC laser (laser 1) with facet effects removed for (a) above threshold operation and (b) below threshold operation. The mean of the distribution is shown as a horizontal line and the standard deviation as the tic marks in the upper left-hand corner.

Fig. 3
Fig. 3

Distribution of ρ along the active region of a gain-guided laser (laser g) for (a) above threshold operation and (b) below threshold operation. The mean of the distribution is shown as a horizontal line and the standard deviation as the tic marks in the upper left-hand corner.

Fig. 4
Fig. 4

Standard deviation vs mean of below threshold degree of polarization (ρ) measurements for gain-guided lasers (lowercase), PBH lasers (uppercase), and ABC lasers (numbers).

Fig. 5
Fig. 5

Standard deviation vs mean of above threshold degree of polarization (ρ) measurements for gain-guided lasers (lowercase), PBH lasers (uppercase), and ABC lasers (numbers).

Fig. 6
Fig. 6

Experimentally measured longitudinal mode spectrum of gain-guided lasers a and g, ABC laser 1, and PBH laser B.

Fig. 7
Fig. 7

Experimentally measured longitudinal mode spectrum of PBH lasers E, F, J, and K.

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