Abstract

We have derived the photodiode self-calibration formula for calculating the internal quantum efficiency of silicon photodiodes from the results of one, two, or three independent self-calibration experiments and from the results of the oxide bias and reverse bias experiments in conjunction with a calculation of the effect of Auger recombination. We show that the formula published elsewhere for these three effects is not correct.

© 1991 Optical Society of America

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References

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  1. E. F. Zalewski, J. Geist, “Silicon Photodiode Absolute Spectral Response Self-Calibration,” Appl. Opt. 19, 1214–1216 (1980).
    [CrossRef] [PubMed]
  2. J. Geist, “Silicon Photodiode Self-Calibration,” in Theory and Practice of Radiation Thermometry, D. P. DeWitt, G. D. Nutter, Eds. (Wiley, New York, 1988), Chap. 14.
    [CrossRef]
  3. “Determination of the Spectral Responsivity of Optical Radiation Detectors,” Commission Internationale De L’Éiclairage (Paris, 1984).
  4. H. J. Hovel, “Solar Cells,” in Semiconductors and Semimetals, R. K. Willardson, A. C. Beers, Eds. (Academic, New York, 1975), pp. 15–33.
  5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 800–805.
  6. Reference to a commercial product is included for completeness of exposition, and constitutes neither an endorsement by NIST nor representation that the product referenced is the best available for the purpose.
  7. PC-1D is available from Iowa State University Research Foundation (ISURF), Ames, IA 50011, copyright 1985.
  8. J. Geist, H. Baltes, “High Accuracy Modeling of Photodiode Quantum Efficiency,” Appl. Opt. 28, 3929–3939 (1989).
    [CrossRef] [PubMed]

1989 (1)

1980 (1)

Baltes, H.

Geist, J.

Hovel, H. J.

H. J. Hovel, “Solar Cells,” in Semiconductors and Semimetals, R. K. Willardson, A. C. Beers, Eds. (Academic, New York, 1975), pp. 15–33.

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 800–805.

Zalewski, E. F.

Appl. Opt. (2)

Other (6)

J. Geist, “Silicon Photodiode Self-Calibration,” in Theory and Practice of Radiation Thermometry, D. P. DeWitt, G. D. Nutter, Eds. (Wiley, New York, 1988), Chap. 14.
[CrossRef]

“Determination of the Spectral Responsivity of Optical Radiation Detectors,” Commission Internationale De L’Éiclairage (Paris, 1984).

H. J. Hovel, “Solar Cells,” in Semiconductors and Semimetals, R. K. Willardson, A. C. Beers, Eds. (Academic, New York, 1975), pp. 15–33.

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 800–805.

Reference to a commercial product is included for completeness of exposition, and constitutes neither an endorsement by NIST nor representation that the product referenced is the best available for the purpose.

PC-1D is available from Iowa State University Research Foundation (ISURF), Ames, IA 50011, copyright 1985.

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Tables (1)

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Table I Photocurrent Calculated by PC-1D for Different Combinations of Surface Recombination Velocity S, Bulk Recombination Rate R, and Auger Recombination Rate Cross Section A

Equations (19)

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η = ε O ε R 1 ( 1 ε O ) ( 1 ε R ) ,
η = ε O ε R ε A 1 ( 1 ε O ) ( 1 ε R ) ( 1 ε A ) ,
J T = J 1 + J 2 + J 3 ,
η = J T J 100 ,
η = [ J 1 J 1 , max ] [ J 1 , max J 100 ] + [ J 2 J 2 , max ] [ J 2 , max J 100 ] + [ J 3 J 3 , max ] [ J 3 , max J 100 ] ,
η = γ 1 β 1 + γ 2 β 2 + γ 3 β 3 .
0 β i 1 ,
ε 1 = γ 1 β 1 + γ 2 β 2 + γ 3 β 3 γ 1 + γ 2 β 2 + γ 3 β 3 ,
ε 2 = γ 1 β 1 + γ 2 β 2 + γ 3 β 3 γ 1 β 1 + γ 2 + γ 3 β 3 ,
ε 3 = γ 1 β 1 + γ 2 β 2 + γ 3 β 3 γ 1 β 1 + γ 2 β 2 + γ 3 .
1 ε 1 + 1 ε 2 + 1 ε 3 = 2 ( β 1 γ 1 + β 2 γ 2 + β 3 γ 3 ) + γ 1 + γ 2 + γ 3 ( β 1 γ 1 + β 2 γ 2 + β 3 γ 3 ) .
1 η = 1 ε 1 + 1 ε 2 + 1 ε 3 2 ,
η = ε 1 ε 2 ε 3 1 ( 1 ε 1 ) ( 1 ε 2 ) ( 1 ε 1 ) ( 1 ε 3 ) ( 1 ε 2 ) ( 1 ε 3 ) + 2 ( 1 ε 1 ) ( 1 ε 2 ) ( 1 ε 3 ) .
η 1 = β O γ O + β R γ R ,
η 2 = β O γ O + γ R ,
η 3 = γ O + β R γ R ,
η 4 = γ O + γ R .
η 1 + η 4 = η 2 + η 3 .
η = ε O ε R ε A 1 ( 1 ε O ) ( 1 ε R ) ,

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