Abstract

Thin vanadium oxide films were made by vacuum evaporation followed by the annealing posttreatment in the presence of air. The thickness increased by a factor as large as ~2.3 on oxidation. Electron diffractograms indicated a bcc → monoclinic transformation during the annealing, and electron micrographs showed pronounced grain growth. Temperature-dependent electrical conductivity as well as spectral transmittance was measured vs annealing time. At an initial thickness of 0.12 μm, it took a few hours to establish VO2 films with a well defined semiconductor–metal transition and concomitant thermochromic switching at ~57°C.

© 1991 Optical Society of America

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