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Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 1.5-μm wavelength

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Abstract

Good optical-quality SiON layers deposited upon a SiO2 buffer layer placed upon silicon wafers have been obtained by using plasma-enhanced chemical vapor deposition from SiH4, NH3, and N2O. Optical planar waveguides with a thickness of 5 μm and a refractive index of 1.470 have been deposited and investigated in the wavelength region of 1.3–1.6 μm. Three absorption bands at 1.40, 1.48, and 1.54 μm have been detected and interpreted as Si–OH, N–H, and Si–H vibrational modes, respectively. Absorption losses of 3.8 dB/cm at 1.4 μm and 3.2 dB/cm at 1.51 μm have been measured. A mild annealing at ∼800°C completely removes the band at 1.40 μm, whereas strong reduction of absorption at 1.51 μm requires 3 h of annealing at 1100°C. As a result, propagation losses of 0.36 to 0.54 dB/cm have been measured at 1.54-μm wavelength.

© 1991 Optical Society of America

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