Abstract

In optoelectronic neural processors weights are set optically and neural states electrically. Reυersing this arrangement allows weights to be set by adjusting photodetector sensitiυity.

© 1991 Optical Society of America

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References

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  1. A. Agranat, C. F. Neugebauer, A. Yariv, “Parallel Optoelectronic Realization of Neural Networks Models Using CID Technology,” Appl. Opt. 27, 4354–4355 (1988).
    [CrossRef] [PubMed]
  2. E. A. Rietman, R. C. Frye, C. C. Wong, C. D. Kornfeld, “Amorphous Silicon Photoconductive Arrays for Artificial Neural Networks,” Appl. Opt. 28, 3474–3478 (1989).
    [CrossRef] [PubMed]
  3. H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).
  4. R. I. MacDonald, D. K. W. Lam “Broadband Matrix Switches: Electro-Optic or Optoelectronic?,” Opt. Quantum Electron. 18, 273–277 (1986).
    [CrossRef]
  5. S. R. Forrest, G. L. Tangonan, V. Jones, “A Simple 8 × 8 Optoelectronic Crossbar Switch,” IEEE/OSA Lightwave Technol. LT-7, 607–614 (1989).
    [CrossRef]
  6. M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).
  7. R. I. MacDonald, “Fully Orthogonal Optical-Code Multiplex for Broadcasting,” Opt. Lett. 13, 539–541 (1988).
    [CrossRef] [PubMed]
  8. A. Von Lehmen, E. G. Paek, P. F. Liao, A. Marrakchi, J. S. Patel, “Influence of Interconnection Weight Discretization and Noise in an Optoelectronic Neural Network,” Opt. Lett. 14, 928–930 (1989).
    [CrossRef] [PubMed]
  9. D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
    [CrossRef]

1989

1988

1986

R. I. MacDonald, D. K. W. Lam “Broadband Matrix Switches: Electro-Optic or Optoelectronic?,” Opt. Quantum Electron. 18, 273–277 (1986).
[CrossRef]

1980

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

Agranat, A.

Auston, D. H.

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

Bean, J. C.

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

Forrest, S. R.

S. R. Forrest, G. L. Tangonan, V. Jones, “A Simple 8 × 8 Optoelectronic Crossbar Switch,” IEEE/OSA Lightwave Technol. LT-7, 607–614 (1989).
[CrossRef]

Frye, R. C.

Gouin, F.

M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).

Himeno, T.

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

Johnson, A. M.

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

Jones, V.

S. R. Forrest, G. L. Tangonan, V. Jones, “A Simple 8 × 8 Optoelectronic Crossbar Switch,” IEEE/OSA Lightwave Technol. LT-7, 607–614 (1989).
[CrossRef]

Kanamori, K.

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

Kornfeld, C. D.

Lam, D. K. W.

R. I. MacDonald, D. K. W. Lam “Broadband Matrix Switches: Electro-Optic or Optoelectronic?,” Opt. Quantum Electron. 18, 273–277 (1986).
[CrossRef]

Liao, P. F.

MacDonald, R. I.

R. I. MacDonald, “Fully Orthogonal Optical-Code Multiplex for Broadcasting,” Opt. Lett. 13, 539–541 (1988).
[CrossRef] [PubMed]

R. I. MacDonald, D. K. W. Lam “Broadband Matrix Switches: Electro-Optic or Optoelectronic?,” Opt. Quantum Electron. 18, 273–277 (1986).
[CrossRef]

M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).

Marrakchi, A.

Neugebauer, C. F.

Noad, J.

M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).

Paek, E. G.

Pak, K.

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

Patel, J. S.

Rietman, E. A.

Smith, P. R.

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

Takano, Y.

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

Tangonan, G. L.

S. R. Forrest, G. L. Tangonan, V. Jones, “A Simple 8 × 8 Optoelectronic Crossbar Switch,” IEEE/OSA Lightwave Technol. LT-7, 607–614 (1989).
[CrossRef]

Veilleux, M. C.

M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).

Von Lehmen, A.

Wong, C. C.

Yariv, A.

Yonezu, H.

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

Appl. Opt.

Appl. Phys. Lett.

D. H. Auston, A. M. Johnson, P. R. Smith, J. C. Bean, “Picosecond Optoelectronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors,” Appl. Phys. Lett. 37, 371–373 (1980).
[CrossRef]

IEEE/OSA Lightwave Technol.

S. R. Forrest, G. L. Tangonan, V. Jones, “A Simple 8 × 8 Optoelectronic Crossbar Switch,” IEEE/OSA Lightwave Technol. LT-7, 607–614 (1989).
[CrossRef]

Opt. Lett.

Opt. Quantum Electron.

R. I. MacDonald, D. K. W. Lam “Broadband Matrix Switches: Electro-Optic or Optoelectronic?,” Opt. Quantum Electron. 18, 273–277 (1986).
[CrossRef]

Other

M. C. Veilleux, R. I. MacDonald, F. Gouin, J. Noad, “High-Isolation Optoelectronic Switch Matrix,” in Technical Digest, International Topical Meeting on Photonic Switching, Kobe, Japan (1990).

H. Yonezu, T. Himeno, K. Kanamori, K. Pak, Y. Takano, “Optoelectronic Synaptic Connection Circuit with Variable Analog and Nonvolatile Weights,” in Conference Record, International Topical Meeting on Optical Computing, Kobe, Japan (Japan Society for Applied Physics, Apr.1990).

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Figures (4)

Fig. 1
Fig. 1

Optoelectronic neural network with optically controlled weight matrix.

Fig. 2
Fig. 2

Optoelectronic neural network with electronically controlled weight matrix.

Fig. 3
Fig. 3

Optoelectronic neural network with the electronic control applied optically.

Fig. 4
Fig. 4

(a) Responsivity vs control power for a GaAs photoconductor controlled by a Si PIN photodiode. Signal frequency, 1 MHz; 0.5 mW incident on the photoconductor. (b) Experimental arrangement for the above data.

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