Abstract

The loss caused by internal reflection from a plane surface is 97.3% for a radiative–ecombination light source in a semiconductor material, such as Si or GaAs, with an index of refraction of 3.56 at the radiating wavelength. Efficient light transfer between such a light source and a photoreceiver with a similarly high-refractive index may be accomplished by a light pipe with a comparably high refractive index.

© 1964 Optical Society of America

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