Abstract

We investigate scaling with the cross-sectional area of energy and speed for optical devices and of optical design, speed, and thermal dissipation for device arrays. Theory and experiments clearly point to lower energy and faster speed for smaller devices and to simpler optical design, smaller propagation time delays, and higher thermal dissipation capability for smaller array sizes. We conclude that the development of high speed digital optical processors will depend on small devices interconnected by microoptic systems.

© 1990 Optical Society of America

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  1. H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
    [CrossRef]
  2. D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
    [CrossRef]
  3. J. L. Jewell et al., “3-pJ, 82-MHz Optical Logic Gates in a Room-Temperature GaAs-AlGaAs Multiple-Quantum-Well Etalon,” Appl. Phys. Lett. 46, 918–920 (1985).
    [CrossRef]
  4. S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.
  5. A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
    [CrossRef]
  6. J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
    [CrossRef]
  7. J. L. Jewell et al., “Transverse Modes, Waveguide Dispersion and 30 ps Recovery in Submicron GaAs/AlAs Microresonators,” Appl. Phys. Lett. 55, 22–24 (1989).
    [CrossRef]
  8. J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
    [CrossRef]
  9. J. L. Jewell et al., “Vertical Cavity Single Quantum Well Laser,” Appl. Phys. Lett. 55, 424–426 (1989).
    [CrossRef]
  10. J. L. Jewell et al., “Low Threshold Electrically-Pumped Vertical-Cavity Surface-Emitting Microlasers,” Electron. Lett. 25, 1123 (1989).
    [CrossRef]
  11. Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
    [CrossRef]
  12. J. L. Jewell, S. L. McCall, “Microoptic Systems: Essential for Optical Computing,” in Technical Digest, Topical Meeting on Optical Computing (Optical Society of America, Washington, DC, 1989), paper TuB4.
  13. F. W. Ostermayer, P. A. Kohl, R. H. Burton, “Photoelectrochemical Etching of Integral Lenses on InGaAsP/InP Light-Emitting Diodes,” Appl. Phys. Lett.43, 642–644 (1983).
    [CrossRef]
  14. Z. D. Popovic, R. A. Sprague, G. A. Neville Connell, “Technique for Monolithic Fabrication of Microlens Arrays,” Appl. Opt. 27, 1281–1284 (1988).
    [CrossRef] [PubMed]
  15. Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
    [CrossRef]
  16. T. Shiono, K. Setsune, O. Yamazaki, K. Wasa, “Rectangular-Apertured Micro-Fresnel Lens Arrays Fabricated by Electron-Beam Lithography,” Appl. Opt. 26, 587–591 (1987).
    [CrossRef] [PubMed]
  17. K. Iga, Y. Kokubun, M. Oikawa, Fundamentals of Microoptics (Academic, New York, 1984); K. Iga, Proc. IEEE813, Proceedings of the 14th Congress of the International Commission for Optics, Quebec, Canada, Aug. (1987).
  18. Technical Digest, Second Microoptics Conference/Eighth Topical Meeting on Gradient-Index Optical Imaging Systems (The Japan Society of Applied Physics, Tokyo, 1989).

1989 (5)

J. L. Jewell et al., “Vertical Cavity Single Quantum Well Laser,” Appl. Phys. Lett. 55, 424–426 (1989).
[CrossRef]

J. L. Jewell et al., “Low Threshold Electrically-Pumped Vertical-Cavity Surface-Emitting Microlasers,” Electron. Lett. 25, 1123 (1989).
[CrossRef]

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell et al., “Transverse Modes, Waveguide Dispersion and 30 ps Recovery in Submicron GaAs/AlAs Microresonators,” Appl. Phys. Lett. 55, 22–24 (1989).
[CrossRef]

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

1988 (2)

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

Z. D. Popovic, R. A. Sprague, G. A. Neville Connell, “Technique for Monolithic Fabrication of Microlens Arrays,” Appl. Opt. 27, 1281–1284 (1988).
[CrossRef] [PubMed]

1987 (2)

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

T. Shiono, K. Setsune, O. Yamazaki, K. Wasa, “Rectangular-Apertured Micro-Fresnel Lens Arrays Fabricated by Electron-Beam Lithography,” Appl. Opt. 26, 587–591 (1987).
[CrossRef] [PubMed]

1985 (1)

J. L. Jewell et al., “3-pJ, 82-MHz Optical Logic Gates in a Room-Temperature GaAs-AlGaAs Multiple-Quantum-Well Etalon,” Appl. Phys. Lett. 46, 918–920 (1985).
[CrossRef]

1979 (2)

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
[CrossRef]

Burton, R. H.

F. W. Ostermayer, P. A. Kohl, R. H. Burton, “Photoelectrochemical Etching of Integral Lenses on InGaAsP/InP Light-Emitting Diodes,” Appl. Phys. Lett.43, 642–644 (1983).
[CrossRef]

Diadiuk, V.

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

Duffy, J. F.

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

English, J. H.

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

Florez, L. T.

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

Gibbs, H. M.

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

Gossard, A. C.

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

Harbison, J. P.

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

Iga, K.

K. Iga, Y. Kokubun, M. Oikawa, Fundamentals of Microoptics (Academic, New York, 1984); K. Iga, Proc. IEEE813, Proceedings of the 14th Congress of the International Commission for Optics, Quebec, Canada, Aug. (1987).

Jewell, J. L.

J. L. Jewell et al., “Transverse Modes, Waveguide Dispersion and 30 ps Recovery in Submicron GaAs/AlAs Microresonators,” Appl. Phys. Lett. 55, 22–24 (1989).
[CrossRef]

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell et al., “Vertical Cavity Single Quantum Well Laser,” Appl. Phys. Lett. 55, 424–426 (1989).
[CrossRef]

J. L. Jewell et al., “Low Threshold Electrically-Pumped Vertical-Cavity Surface-Emitting Microlasers,” Electron. Lett. 25, 1123 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

J. L. Jewell et al., “3-pJ, 82-MHz Optical Logic Gates in a Room-Temperature GaAs-AlGaAs Multiple-Quantum-Well Etalon,” Appl. Phys. Lett. 46, 918–920 (1985).
[CrossRef]

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

J. L. Jewell, S. L. McCall, “Microoptic Systems: Essential for Optical Computing,” in Technical Digest, Topical Meeting on Optical Computing (Optical Society of America, Washington, DC, 1989), paper TuB4.

Johnston, A.

D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
[CrossRef]

Kohl, P. A.

F. W. Ostermayer, P. A. Kohl, R. H. Burton, “Photoelectrochemical Etching of Integral Lenses on InGaAsP/InP Light-Emitting Diodes,” Appl. Phys. Lett.43, 642–644 (1983).
[CrossRef]

Kokubun, Y.

K. Iga, Y. Kokubun, M. Oikawa, Fundamentals of Microoptics (Academic, New York, 1984); K. Iga, Proc. IEEE813, Proceedings of the 14th Congress of the International Commission for Optics, Quebec, Canada, Aug. (1987).

Lee, Y. H.

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

Liau, Z. L.

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

McCall, S. L.

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

J. L. Jewell, S. L. McCall, “Microoptic Systems: Essential for Optical Computing,” in Technical Digest, Topical Meeting on Optical Computing (Optical Society of America, Washington, DC, 1989), paper TuB4.

Miller, D. A. B.

D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
[CrossRef]

Mull, D. E.

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

Neville Connell, G. A.

Oikawa, M.

K. Iga, Y. Kokubun, M. Oikawa, Fundamentals of Microoptics (Academic, New York, 1984); K. Iga, Proc. IEEE813, Proceedings of the 14th Congress of the International Commission for Optics, Quebec, Canada, Aug. (1987).

Ostermayer, F. W.

F. W. Ostermayer, P. A. Kohl, R. H. Burton, “Photoelectrochemical Etching of Integral Lenses on InGaAsP/InP Light-Emitting Diodes,” Appl. Phys. Lett.43, 642–644 (1983).
[CrossRef]

Passner, A.

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

Popovic, Z. D.

Scherer, A.

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

Setsune, K.

Shiono, T.

Smith, S. D.

D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
[CrossRef]

Sprague, R. A.

Venkatesan, T. N. C.

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

Walpole, J. N.

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

Wasa, K.

Wiegmann, W.

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

Yamazaki, O.

Appl. Opt. (2)

Appl. Phys. Lett. (8)

Z. L. Liau, V. Diadiuk, J. N. Walpole, D. E. Mull, “Gallium Phosphide Microlenses by Mass Transport,” Appl. Phys. Lett. 55, 97–99 (1989).
[CrossRef]

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, W. Wiegmann, “Optical Bistability in Semiconductors,” Appl. Phys. Lett. 35, 451–453 (1979).
[CrossRef]

D. A. B. Miller, S. D. Smith, A. Johnston, “Optical Bistability and Signal Amplification in a Semiconductor Crystal: Applications of New Low-Power Nonlinear Effects in InSb,” Appl. Phys. Lett. 35, 658–660 (1979).
[CrossRef]

J. L. Jewell et al., “3-pJ, 82-MHz Optical Logic Gates in a Room-Temperature GaAs-AlGaAs Multiple-Quantum-Well Etalon,” Appl. Phys. Lett. 46, 918–920 (1985).
[CrossRef]

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, J. H. English, “GaAs-AlAs Monolithic Microresonator Arrays,” Appl. Phys. Lett. 51, 94–96 (1987).
[CrossRef]

J. L. Jewell et al., “Transverse Modes, Waveguide Dispersion and 30 ps Recovery in Submicron GaAs/AlAs Microresonators,” Appl. Phys. Lett. 55, 22–24 (1989).
[CrossRef]

J. L. Jewell, Y. H. Lee, S. L. McCall, J. P. Harbison, L. T. Florez, “High-Finesse (Al,Ga)As Interference Filters Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 53, 640–642 (1988).
[CrossRef]

J. L. Jewell et al., “Vertical Cavity Single Quantum Well Laser,” Appl. Phys. Lett. 55, 424–426 (1989).
[CrossRef]

Electron. Lett. (2)

J. L. Jewell et al., “Low Threshold Electrically-Pumped Vertical-Cavity Surface-Emitting Microlasers,” Electron. Lett. 25, 1123 (1989).
[CrossRef]

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, “Room-Temperature Continuous-Wave Vertical Cavity Single Quantum Well Microlaser Diodes,” Electron. Lett. 25, 1377 (1989).
[CrossRef]

Other (6)

J. L. Jewell, S. L. McCall, “Microoptic Systems: Essential for Optical Computing,” in Technical Digest, Topical Meeting on Optical Computing (Optical Society of America, Washington, DC, 1989), paper TuB4.

F. W. Ostermayer, P. A. Kohl, R. H. Burton, “Photoelectrochemical Etching of Integral Lenses on InGaAsP/InP Light-Emitting Diodes,” Appl. Phys. Lett.43, 642–644 (1983).
[CrossRef]

S. L. McCall, A. C. Gossard, J. H. English, J. L. Jewell, J. F. Duffy, “Operation of a GaAs-AlAs Optical Logic Gate Fabricated Completely by Molecular Beam Epitaxy,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1986), paper FK3.

A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, L. T. Florez, “Fabrication of Microlasers and Microresonator Optical Switches,” Appl. Phys. Lett.55, to be published (1989).
[CrossRef]

K. Iga, Y. Kokubun, M. Oikawa, Fundamentals of Microoptics (Academic, New York, 1984); K. Iga, Proc. IEEE813, Proceedings of the 14th Congress of the International Commission for Optics, Quebec, Canada, Aug. (1987).

Technical Digest, Second Microoptics Conference/Eighth Topical Meeting on Gradient-Index Optical Imaging Systems (The Japan Society of Applied Physics, Tokyo, 1989).

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Figures (4)

Fig. 1
Fig. 1

Scanning electron micrograph of an ~1-μm diam microresonator showing the mirror and spacer regions.

Fig. 2
Fig. 2

(Top) response of a 0.5-μm diam device to 3-pJ incident controlling pulses. The left side is the output with no input (controlling pulses) present, and the right side is the output with input present. (Bottom) Same as top but with the probe pulses delayed by 30 ps.

Fig. 3
Fig. 3

Microoptic imaging interconnect.

Fig. 4
Fig. 4

Portion of an InP lenslet array.

Tables (1)

Tables Icon

Table I Approximate Scaling Behavior of Various Quantities Under the Assumptions Given In the Text

Metrics