Abstract

A microwave-powered ultraviolet source capable of covering an area as large as a 150-mm Si wafer is developed. Fifteen low pressure mercury discharge lamps are arrayed in a flat microwave cavity. The Hg 254-nm irradiance on the surface 1 cm from the lamps is 120 mW/cm2 at a microwave power of 1200 W. This UV source is used for photoresist removal. Low pressure cadmium lamps, which have the Cd 229-nm irradiance of 13.9 mW/cm2 at 1 cm for a 500-W input, are also investigated.

© 1990 Optical Society of America

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References

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  1. D. A. Bolon, C. O. Kunz, “Ultraviolet Depolymerization of Photoresist Polymers,” Polymer Eng. Sci. 12, 109–111 (1972).
    [CrossRef]
  2. D. A. Bolon, “Method for Removing Photoresist from Substrate,” U.S. Patent3,890,176 (17June1975).
  3. C. H. Brekel, P. J. Severin, “Control of the Deposition of Silicon Nitride Layers by 2537 Å Radiation,” J. Electrochem. Soc. 119, 372–376 (1972).
    [CrossRef]
  4. J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).
  5. G. Brandli, “A New Source of Intense Short-Wave Ultraviolet Radiation,” Brown Boveri Rev. 5, 202–205 (1975).
  6. P. G. Wilkinson, Y. Tanaka, “New Xenon-Light Source for the Vacuum Ultraviolet,” J. Opt. Soc. Am. 45, 344–349 (1955).
    [CrossRef]
  7. D. M. Spero, B. J. Eastlund, M. G. Ury, “Apparatus and Method for Generating Radiation,” U.S. Patent3,872,349 (18Mar.1975); D. M. Spero, B. J. Eastlund, M. G. Ury, “Method and Apparatus for Generating Electromagnetic Radiation,” U.S. Patent3,911,318 (7Oct.1975).
  8. M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).
  9. J. F. Waymouth, Electric Discharge Lamps (MIT Press, Cambridge, MA, 1971), p. 34.

1982 (1)

M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).

1980 (1)

J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).

1975 (1)

G. Brandli, “A New Source of Intense Short-Wave Ultraviolet Radiation,” Brown Boveri Rev. 5, 202–205 (1975).

1972 (2)

D. A. Bolon, C. O. Kunz, “Ultraviolet Depolymerization of Photoresist Polymers,” Polymer Eng. Sci. 12, 109–111 (1972).
[CrossRef]

C. H. Brekel, P. J. Severin, “Control of the Deposition of Silicon Nitride Layers by 2537 Å Radiation,” J. Electrochem. Soc. 119, 372–376 (1972).
[CrossRef]

1955 (1)

Bolon, D. A.

D. A. Bolon, C. O. Kunz, “Ultraviolet Depolymerization of Photoresist Polymers,” Polymer Eng. Sci. 12, 109–111 (1972).
[CrossRef]

D. A. Bolon, “Method for Removing Photoresist from Substrate,” U.S. Patent3,890,176 (17June1975).

Brandli, G.

G. Brandli, “A New Source of Intense Short-Wave Ultraviolet Radiation,” Brown Boveri Rev. 5, 202–205 (1975).

Brekel, C. H.

C. H. Brekel, P. J. Severin, “Control of the Deposition of Silicon Nitride Layers by 2537 Å Radiation,” J. Electrochem. Soc. 119, 372–376 (1972).
[CrossRef]

Eastlund, B. J.

D. M. Spero, B. J. Eastlund, M. G. Ury, “Apparatus and Method for Generating Radiation,” U.S. Patent3,872,349 (18Mar.1975); D. M. Spero, B. J. Eastlund, M. G. Ury, “Method and Apparatus for Generating Electromagnetic Radiation,” U.S. Patent3,911,318 (7Oct.1975).

Gebhart, F. L.

J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).

Hall, T. C.

J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).

Kunz, C. O.

D. A. Bolon, C. O. Kunz, “Ultraviolet Depolymerization of Photoresist Polymers,” Polymer Eng. Sci. 12, 109–111 (1972).
[CrossRef]

Matthews, J. C.

M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).

Peters, J. W.

J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).

Severin, P. J.

C. H. Brekel, P. J. Severin, “Control of the Deposition of Silicon Nitride Layers by 2537 Å Radiation,” J. Electrochem. Soc. 119, 372–376 (1972).
[CrossRef]

Spero, D. M.

D. M. Spero, B. J. Eastlund, M. G. Ury, “Apparatus and Method for Generating Radiation,” U.S. Patent3,872,349 (18Mar.1975); D. M. Spero, B. J. Eastlund, M. G. Ury, “Method and Apparatus for Generating Electromagnetic Radiation,” U.S. Patent3,911,318 (7Oct.1975).

Tanaka, Y.

Ury, M. G.

M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).

D. M. Spero, B. J. Eastlund, M. G. Ury, “Apparatus and Method for Generating Radiation,” U.S. Patent3,872,349 (18Mar.1975); D. M. Spero, B. J. Eastlund, M. G. Ury, “Method and Apparatus for Generating Electromagnetic Radiation,” U.S. Patent3,911,318 (7Oct.1975).

Waymouth, J. F.

J. F. Waymouth, Electric Discharge Lamps (MIT Press, Cambridge, MA, 1971), p. 34.

Wilkinson, P. G.

Wood, C. H.

M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).

Brown Boveri Rev. (1)

G. Brandli, “A New Source of Intense Short-Wave Ultraviolet Radiation,” Brown Boveri Rev. 5, 202–205 (1975).

J. Electrochem. Soc. (1)

C. H. Brekel, P. J. Severin, “Control of the Deposition of Silicon Nitride Layers by 2537 Å Radiation,” J. Electrochem. Soc. 119, 372–376 (1972).
[CrossRef]

J. Opt. Soc. Am. (1)

Polymer Eng. Sci. (1)

D. A. Bolon, C. O. Kunz, “Ultraviolet Depolymerization of Photoresist Polymers,” Polymer Eng. Sci. 12, 109–111 (1972).
[CrossRef]

Proc. Soc. Photo-Opt. Instrum. Eng. (1)

M. G. Ury, J. C. Matthews, C. H. Wood, “New Deep Ultraviolet Source for Microlithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 334, 241–246 (1982).

Solid State Technol. (1)

J. W. Peters, F. L. Gebhart, T. C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technol. 23, 121–126 (1980).

Other (3)

D. A. Bolon, “Method for Removing Photoresist from Substrate,” U.S. Patent3,890,176 (17June1975).

J. F. Waymouth, Electric Discharge Lamps (MIT Press, Cambridge, MA, 1971), p. 34.

D. M. Spero, B. J. Eastlund, M. G. Ury, “Apparatus and Method for Generating Radiation,” U.S. Patent3,872,349 (18Mar.1975); D. M. Spero, B. J. Eastlund, M. G. Ury, “Method and Apparatus for Generating Electromagnetic Radiation,” U.S. Patent3,911,318 (7Oct.1975).

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Figures (6)

Fig. 1
Fig. 1

Block diagram of the UV source apparatus.

Fig. 2
Fig. 2

Microwave cavity and lamps of a flat microwave-powered ultraviolet source. The thickness of the cavity where three tuning stabs are located is 55 mm and that of the other part is 20 mm.

Fig. 3
Fig. 3

Hg 254-nm irradiance on the surface 20 cm from the lamps. Here the power is incident microwave power minus reflected power.

Fig. 4
Fig. 4

Intensity distribution for Hg 254 nm along the lamp radius. This is measured at the center of the lamp which is set closest to the slit in Fig. 2.

Fig. 5
Fig. 5

Radial distribution of Hg 254-nm intensity at the center of the 20-mm diameter and 50-mm long lamp set in a 100- × 230- × 40-mm microwave cavity.

Fig. 6
Fig. 6

Cd 229-nm irradiance on the surface 20 cm from the lamps.

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