Abstract

Preparation, measurement, and calculation methods are discussed for the determination of the complex index of refraction, the layer thickness, and induced volume changes of thin layers (due to a phase change, for example). The principle of the calculation is fitting a curve in the reflectance–transmittance plane measured on a range of layer thicknesses, instead of fitting the reflectance and transmittance as a function of independently measured layer thicknesses. This general method is applied to thin films of GaSb and InSb, in which a laser-induced amorphous-to-crystalline transition can be used in optical recording. The information essential for optical recording applications is measured quickly by making use of a stepwise prepared layer thickness distribution, while the complex refractive index and the layer thicknesses can also be calculated unambiguously.

© 1989 Optical Society of America

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  1. D. J. Gravesteijn, H. F. J. J. van Tongeren, M. M. Sens, T. C. J. M. Bertens, C. J. van de Poel, “Phase-Change Optical Data Storage in GaSb,” Appl. Opt. 26, 4772–4776 (1988).
    [CrossRef]
  2. J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
    [CrossRef]
  3. W. E. Case, “Algebraic Method for Extracting Thin-Film Optical Parameters from Spectrophotometer Measurements,” Appl. Opt. 22, 1832–1836 (1983).
    [CrossRef] [PubMed]
  4. M. Chang, U. J. Gibson, “Optical Constant Determinations of Thin Films by a Random Search Method,” Appl. Opt. 24,504–507 (1985).
    [CrossRef] [PubMed]
  5. C. J. van de Poel, “Rapid Crystallization of Thin Solid Films,” J. Mater. Res. 3, 126–132 (1988).
    [CrossRef]
  6. L. Vriens, W. Rippens, “Optical Constants of Absorbing Thin Solid Films on a Substrate,” Appl. Opt. 22, 4105–4110 (1983).
    [CrossRef] [PubMed]
  7. H. Hora, “Stresses in Silicon Crystals from Ion-Implanted Amorphous Regions,” Appl. Phys. A 32, 217–221 (1983).
    [CrossRef]
  8. M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1980).
  9. M. Mansuripur, “Distribution of Light at and Near the Focus of High-Numerical-Aperture Objectives,” J. Opt. Soc. Am. A 3, 2086–2093 (1986).
    [CrossRef]
  10. J. Stuke, G. Zimmer, “Optical Properties of Amorphous 3–5 Compounds,” Phys. Status Solidi B 49, 513–523 (1972).
    [CrossRef]
  11. D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983).
    [CrossRef]
  12. The value reported in Ref. 1 for na of a-GaSb at λ0 = 780 nm equals 4.6 − 1.2i instead of the printed value 4.6 − 0.2i: a printing error.
  13. Private communications to C. J. van de Poel, see Ref. 5.
  14. G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

1988 (2)

1986 (1)

1985 (1)

1983 (4)

W. E. Case, “Algebraic Method for Extracting Thin-Film Optical Parameters from Spectrophotometer Measurements,” Appl. Opt. 22, 1832–1836 (1983).
[CrossRef] [PubMed]

L. Vriens, W. Rippens, “Optical Constants of Absorbing Thin Solid Films on a Substrate,” Appl. Opt. 22, 4105–4110 (1983).
[CrossRef] [PubMed]

H. Hora, “Stresses in Silicon Crystals from Ion-Implanted Amorphous Regions,” Appl. Phys. A 32, 217–221 (1983).
[CrossRef]

D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983).
[CrossRef]

1976 (1)

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
[CrossRef]

1972 (1)

J. Stuke, G. Zimmer, “Optical Properties of Amorphous 3–5 Compounds,” Phys. Status Solidi B 49, 513–523 (1972).
[CrossRef]

Aspnes, D. E.

D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983).
[CrossRef]

Bertens, T. C. J. M.

Born, M.

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1980).

Bouwhuis, G.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

Braat, J.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

Case, W. E.

Chang, M.

Fillard, J. P.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
[CrossRef]

Gasiot, J.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
[CrossRef]

Gibson, U. J.

Gravesteijn, D. J.

Hora, H.

H. Hora, “Stresses in Silicon Crystals from Ion-Implanted Amorphous Regions,” Appl. Phys. A 32, 217–221 (1983).
[CrossRef]

Huijser, A.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

Manifacier, J. C.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
[CrossRef]

Mansuripur, M.

Pasman, J.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

Rippens, W.

Schouhamer Immink, K.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

Sens, M. M.

Studna, A. A.

D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983).
[CrossRef]

Stuke, J.

J. Stuke, G. Zimmer, “Optical Properties of Amorphous 3–5 Compounds,” Phys. Status Solidi B 49, 513–523 (1972).
[CrossRef]

van de Poel, C. J.

van Rosmalen, G.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

van Tongeren, H. F. J. J.

Vriens, L.

Wolf, E.

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1980).

Zimmer, G.

J. Stuke, G. Zimmer, “Optical Properties of Amorphous 3–5 Compounds,” Phys. Status Solidi B 49, 513–523 (1972).
[CrossRef]

Appl. Opt. (4)

Appl. Phys. A (1)

H. Hora, “Stresses in Silicon Crystals from Ion-Implanted Amorphous Regions,” Appl. Phys. A 32, 217–221 (1983).
[CrossRef]

J. Mater. Res. (1)

C. J. van de Poel, “Rapid Crystallization of Thin Solid Films,” J. Mater. Res. 3, 126–132 (1988).
[CrossRef]

J. Opt. Soc. Am. A (1)

J. Phys. E. (1)

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976).
[CrossRef]

Phys. Rev. B (1)

D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983).
[CrossRef]

Phys. Status Solidi B (1)

J. Stuke, G. Zimmer, “Optical Properties of Amorphous 3–5 Compounds,” Phys. Status Solidi B 49, 513–523 (1972).
[CrossRef]

Other (4)

M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1980).

The value reported in Ref. 1 for na of a-GaSb at λ0 = 780 nm equals 4.6 − 1.2i instead of the printed value 4.6 − 0.2i: a printing error.

Private communications to C. J. van de Poel, see Ref. 5.

G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

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