Abstract

A spatial light modulator with a thin (1-μm) amorphous silicon (PIN) photoconductor has been demonstrated with a threshold sensitivity of <3 μw/cm2. A novel compound electrode design greatly increases the efficiency allowing the use of a photoconductive layer thin enough to achieve good transmission. The performance characteristics are reported and compared to the predictions of a theoretical model of the device.

© 1988 Optical Society of America

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