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  1. R. W. Tkach, A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE/OSA J. Lightwave Technol. LT-4, 1655 (1986).
    [CrossRef]
  2. T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
    [CrossRef]
  3. H. Kressel, J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, (Academic, New York, 1977), p. 269.
  4. G. Eisenstein, L. W. Stulz, “High Quality Antireflection Coatings on Laser Facets by Sputtered Silicon Nitride,” Appl. Opt. 23, 161 (1983).
    [CrossRef]
  5. B. W. Hakki, T. L. Paoli, “Gain Spectra in GaAs Double-Heterostructure Injection Lasers,” J. Appl. Phys. 6, 1299 (1975).
    [CrossRef]
  6. J. C. Simon, “Polarization Characteristics of Very Low Reflectivity Coatings for Semiconductor Laser Amplifiers,” in Technical Digest, Twelfth European Conference on Optical Communication, Barcelona (1986), p. 249.
  7. T. Ikegami, “Reflectivity of Mode at Facet and Oscillation Mode in Double-Heterostructure Injection Lasers,” IEEE J. Quantum Electron. QE-8, 470 (1972).
    [CrossRef]

1986 (1)

R. W. Tkach, A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE/OSA J. Lightwave Technol. LT-4, 1655 (1986).
[CrossRef]

1985 (1)

T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
[CrossRef]

1983 (1)

1975 (1)

B. W. Hakki, T. L. Paoli, “Gain Spectra in GaAs Double-Heterostructure Injection Lasers,” J. Appl. Phys. 6, 1299 (1975).
[CrossRef]

1972 (1)

T. Ikegami, “Reflectivity of Mode at Facet and Oscillation Mode in Double-Heterostructure Injection Lasers,” IEEE J. Quantum Electron. QE-8, 470 (1972).
[CrossRef]

Butler, J. K.

H. Kressel, J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, (Academic, New York, 1977), p. 269.

Chraplyvy, A. R.

R. W. Tkach, A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE/OSA J. Lightwave Technol. LT-4, 1655 (1986).
[CrossRef]

Eisenstein, G.

Hakki, B. W.

B. W. Hakki, T. L. Paoli, “Gain Spectra in GaAs Double-Heterostructure Injection Lasers,” J. Appl. Phys. 6, 1299 (1975).
[CrossRef]

Ikegami, T.

T. Ikegami, “Reflectivity of Mode at Facet and Oscillation Mode in Double-Heterostructure Injection Lasers,” IEEE J. Quantum Electron. QE-8, 470 (1972).
[CrossRef]

Kressel, H.

H. Kressel, J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, (Academic, New York, 1977), p. 269.

Mikami, O.

T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
[CrossRef]

Mukai, T.

T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
[CrossRef]

Paoli, T. L.

B. W. Hakki, T. L. Paoli, “Gain Spectra in GaAs Double-Heterostructure Injection Lasers,” J. Appl. Phys. 6, 1299 (1975).
[CrossRef]

Saitoh, T.

T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
[CrossRef]

Simon, J. C.

J. C. Simon, “Polarization Characteristics of Very Low Reflectivity Coatings for Semiconductor Laser Amplifiers,” in Technical Digest, Twelfth European Conference on Optical Communication, Barcelona (1986), p. 249.

Stulz, L. W.

Tkach, R. W.

R. W. Tkach, A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE/OSA J. Lightwave Technol. LT-4, 1655 (1986).
[CrossRef]

Appl. Opt. (1)

IEEE J. Quantum Electron. (1)

T. Ikegami, “Reflectivity of Mode at Facet and Oscillation Mode in Double-Heterostructure Injection Lasers,” IEEE J. Quantum Electron. QE-8, 470 (1972).
[CrossRef]

IEEE/OSA J. Lightwave Technol. (2)

R. W. Tkach, A. R. Chraplyvy, “Regimes of Feedback Effects in 1.5-μm Distributed Feedback Lasers,” IEEE/OSA J. Lightwave Technol. LT-4, 1655 (1986).
[CrossRef]

T. Saitoh, T. Mukai, O. Mikami, “Theoretical Analysis and Fabrication of Antireflection Coatings on Laser-Diode Facets,” IEEE/OSA J. Lightwave Technol. LT-3, 288 (1985).
[CrossRef]

J. Appl. Phys. (1)

B. W. Hakki, T. L. Paoli, “Gain Spectra in GaAs Double-Heterostructure Injection Lasers,” J. Appl. Phys. 6, 1299 (1975).
[CrossRef]

Other (2)

J. C. Simon, “Polarization Characteristics of Very Low Reflectivity Coatings for Semiconductor Laser Amplifiers,” in Technical Digest, Twelfth European Conference on Optical Communication, Barcelona (1986), p. 249.

H. Kressel, J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, (Academic, New York, 1977), p. 269.

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Figures (3)

Fig. 1
Fig. 1

Experimental setup for monitoring laser facet reflectivity.

Fig. 2
Fig. 2

Dependence of optical output power on coating thickness.

Fig. 3
Fig. 3

Continuous wave lasing characteristics at the points indicated in Fig. 2.

Tables (1)

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Table I Physical Properties of the Buried Heterostructure Lasers Used in this Work

Equations (1)

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J t h = β 1 { α + ( 2 L ) 1 ln ( [ R 1 R 2 ] 1 ) } ,

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