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  1. H. A. Haus, C. V. Shank, “Antisymmetric Taper of Distributed Feedback Lasers,” IEEE J. Quantum Electron. QE-12, 532 (1976).
    [CrossRef]
  2. K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
    [CrossRef]
  3. K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
    [CrossRef]
  4. F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
    [CrossRef]
  5. K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
    [CrossRef]
  6. H. Moritz, “Optical Single Layer Lift-Off Process,” IEEE Trans. Electron Devices ED-32, 672 (1985).
    [CrossRef]
  7. H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
    [CrossRef]
  8. B. D. Cantos, R. D. Remba, “An Improved Technique for 1/4 Micrometer Gate Length GaAs MESFET Fabrication by Optical Lithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 773, 61 (1987).

1987 (1)

B. D. Cantos, R. D. Remba, “An Improved Technique for 1/4 Micrometer Gate Length GaAs MESFET Fabrication by Optical Lithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 773, 61 (1987).

1985 (2)

H. Moritz, “Optical Single Layer Lift-Off Process,” IEEE Trans. Electron Devices ED-32, 672 (1985).
[CrossRef]

H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
[CrossRef]

1984 (4)

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

1976 (1)

H. A. Haus, C. V. Shank, “Antisymmetric Taper of Distributed Feedback Lasers,” IEEE J. Quantum Electron. QE-12, 532 (1976).
[CrossRef]

Akiba, S.

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

Arden, W.

H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
[CrossRef]

Cantos, B. D.

B. D. Cantos, R. D. Remba, “An Improved Technique for 1/4 Micrometer Gate Length GaAs MESFET Fabrication by Optical Lithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 773, 61 (1987).

Eda, N.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

Furuya, K.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

Haus, H. A.

H. A. Haus, C. V. Shank, “Antisymmetric Taper of Distributed Feedback Lasers,” IEEE J. Quantum Electron. QE-12, 532 (1976).
[CrossRef]

Klose, H.

H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
[CrossRef]

Kojima, K.

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

Koyama, F.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

Matsushima, Y.

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

Moritz, H.

H. Moritz, “Optical Single Layer Lift-Off Process,” IEEE Trans. Electron Devices ED-32, 672 (1985).
[CrossRef]

Remba, R. D.

B. D. Cantos, R. D. Remba, “An Improved Technique for 1/4 Micrometer Gate Length GaAs MESFET Fabrication by Optical Lithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 773, 61 (1987).

Sakai, K.

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

Sekartedjo, K.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

Shank, C. V.

H. A. Haus, C. V. Shank, “Antisymmetric Taper of Distributed Feedback Lasers,” IEEE J. Quantum Electron. QE-12, 532 (1976).
[CrossRef]

Sigush, R.

H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
[CrossRef]

Suematsu, Y.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

Tanbun-ek, T.

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

Utaka, K.

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

Electron. Lett. (4)

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “Analysis of Quarter-Wave-Shifted DFB Laser,” Electron. Lett. 20, 326 (1984).
[CrossRef]

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-ek, “1.5 μm Phase-Shifted DFB Lasers for Single-Mode Operation,” Electron. Lett. 20, 80 (1984).
[CrossRef]

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, “1.5 μm Phase Adjusted Active Distributed Reflector Laser for Complete Dynamic Single-Mode Operation,” Electron. Lett. 20, 391 (1984).
[CrossRef]

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, “λ/4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists,” Electron. Lett. 20, 1008 (1984).
[CrossRef]

IEEE J. Quantum Electron. (1)

H. A. Haus, C. V. Shank, “Antisymmetric Taper of Distributed Feedback Lasers,” IEEE J. Quantum Electron. QE-12, 532 (1976).
[CrossRef]

IEEE Trans. Electron Devices (2)

H. Moritz, “Optical Single Layer Lift-Off Process,” IEEE Trans. Electron Devices ED-32, 672 (1985).
[CrossRef]

H. Klose, R. Sigush, W. Arden, “Image Reversal of Positive Photoresist: Characterization and Modeling,” IEEE Trans. Electron Devices ED-32, 1654 (1985).
[CrossRef]

Proc. Soc. Photo-Opt. Instrum. Eng. (1)

B. D. Cantos, R. D. Remba, “An Improved Technique for 1/4 Micrometer Gate Length GaAs MESFET Fabrication by Optical Lithography,” Proc. Soc. Photo-Opt. Instrum. Eng. 773, 61 (1987).

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Figures (4)

Fig. 1
Fig. 1

Photochemical reaction sequence of the photoactive compound in Novolac photoresist. With exposure to ultraviolet light, the diazide (A) converts to indene carboxylic acid (B) which can be either developed away or converted to indene (C). The indene is insoluble in developer and is not photoactive.

Fig. 2
Fig. 2

Processing sequence of the area selective image reversal.

Fig. 3
Fig. 3

Scanning electron micrograph showing a 0.25-μm period phase-shifted grating etched in GaAs with HBr:Br2:H2O. Scale bar at bottom margin is 1 μm.

Fig. 4
Fig. 4

Photomicrograph showing photoresist with a 0.7-μm period phase-shifted grating.

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