Abstract

Stoichiometric amorphous films of InSb or GaSb are found to have very short (<15 ns) crystallization times when heated to temperatures close to their melting point. They can be used for write-once amorphous to crystalline optical recording. By adding Te to InSb the crystallization time can be tuned so that erasable crystalline to amorphous optical recording is feasible with a 1-μm sized circular erase spot. Carrier-to-noise ratios of more than 50 dB are achievable at compact disk (CD) recording conditions. The erasable medium allows for CD-type run-length-limited encoding at user bit densities of <0.6 μm/bit.

© 1988 Optical Society of America

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References

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  1. M. Takenaga et al., “New Optical Erasable Medium Using TeOx Thin Films,” Proc. Soc. Photo-Opt. Instrum. Eng. 369, 181 (1983).
  2. M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
    [CrossRef]
  3. C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
    [CrossRef]
  4. N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).
  5. M. Takenaga et al., “TeOx Thin Films for an Optical Disc Memory,” J. Appl. Phys. 54, 5376 (1983).
    [CrossRef]
  6. See, e.g., J. W. Christian, “Phase Transformations,” in Physical Metallurgy, R. W. Cahn, Ed. (North-Holland, Amsterdam, 1970), pp. 479–486.
  7. D. R. Uhlmann, “Kinetic Treatment of Glass Formation,” J. Non-Cryst. Solids 7, 337 (1972).
    [CrossRef]
  8. J. Schneider, Conservatoire des Arts et Metiers, Paris, France; private communication.
  9. H. van Tongeren, M. Sens, “Write-Once Phase Change Recording in GaSb,” in Technical Digest of Topical Meeting on Optical Data Storage (Optical Society of America, Washington, DC, 1987), pp. 50–53.
  10. J. P. J. Heemskerk, K. Schouhamer Immink, “Compact Disc: System Aspects and Modulation,” Philips Tech. Rev. 40, 157 (1982).

1986 (2)

M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
[CrossRef]

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

1985 (1)

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

1983 (2)

M. Takenaga et al., “TeOx Thin Films for an Optical Disc Memory,” J. Appl. Phys. 54, 5376 (1983).
[CrossRef]

M. Takenaga et al., “New Optical Erasable Medium Using TeOx Thin Films,” Proc. Soc. Photo-Opt. Instrum. Eng. 369, 181 (1983).

1982 (1)

J. P. J. Heemskerk, K. Schouhamer Immink, “Compact Disc: System Aspects and Modulation,” Philips Tech. Rev. 40, 157 (1982).

1972 (1)

D. R. Uhlmann, “Kinetic Treatment of Glass Formation,” J. Non-Cryst. Solids 7, 337 (1972).
[CrossRef]

Barton, R. W.

M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
[CrossRef]

Chen, M.

M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
[CrossRef]

Christian, J. W.

See, e.g., J. W. Christian, “Phase Transformations,” in Physical Metallurgy, R. W. Cahn, Ed. (North-Holland, Amsterdam, 1970), pp. 479–486.

Goto, Y.

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Gravesteijn, D. J.

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

Heemskerk, J. P. J.

J. P. J. Heemskerk, K. Schouhamer Immink, “Compact Disc: System Aspects and Modulation,” Philips Tech. Rev. 40, 157 (1982).

Itoh, K.

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Koshino, N.

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Maeda, M.

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Ogawa, S.

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Rippens, W. G. V. M.

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

Rubin, K. A.

M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
[CrossRef]

Schneider, J.

J. Schneider, Conservatoire des Arts et Metiers, Paris, France; private communication.

Schouhamer Immink, K.

J. P. J. Heemskerk, K. Schouhamer Immink, “Compact Disc: System Aspects and Modulation,” Philips Tech. Rev. 40, 157 (1982).

Sens, M.

H. van Tongeren, M. Sens, “Write-Once Phase Change Recording in GaSb,” in Technical Digest of Topical Meeting on Optical Data Storage (Optical Society of America, Washington, DC, 1987), pp. 50–53.

Stockx, H. T. L. P.

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

Takenaga, M.

M. Takenaga et al., “TeOx Thin Films for an Optical Disc Memory,” J. Appl. Phys. 54, 5376 (1983).
[CrossRef]

M. Takenaga et al., “New Optical Erasable Medium Using TeOx Thin Films,” Proc. Soc. Photo-Opt. Instrum. Eng. 369, 181 (1983).

Uhlmann, D. R.

D. R. Uhlmann, “Kinetic Treatment of Glass Formation,” J. Non-Cryst. Solids 7, 337 (1972).
[CrossRef]

van der Poel, C. T.

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

van Tongeren, H.

H. van Tongeren, M. Sens, “Write-Once Phase Change Recording in GaSb,” in Technical Digest of Topical Meeting on Optical Data Storage (Optical Society of America, Washington, DC, 1987), pp. 50–53.

van Uijen, C. M. J.

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

Appl. Phys. Lett. (1)

M. Chen, K. A. Rubin, R. W. Barton, “Compound Materials for Reversible Phase-Change Optical Data Storage,” Appl. Phys. Lett. 49, 502 (1986).
[CrossRef]

J. Appl. Phys. (2)

C. T. van der Poel, D. J. Gravesteijn, W. G. V. M. Rippens, H. T. L. P. Stockx, C. M. J. van Uijen, “Phase Change Optical Recording in TeSeSb Alloys,” J. Appl. Phys. 59, 1819 (1986).
[CrossRef]

M. Takenaga et al., “TeOx Thin Films for an Optical Disc Memory,” J. Appl. Phys. 54, 5376 (1983).
[CrossRef]

J. Non-Cryst. Solids (1)

D. R. Uhlmann, “Kinetic Treatment of Glass Formation,” J. Non-Cryst. Solids 7, 337 (1972).
[CrossRef]

Philips Tech. Rev. (1)

J. P. J. Heemskerk, K. Schouhamer Immink, “Compact Disc: System Aspects and Modulation,” Philips Tech. Rev. 40, 157 (1982).

Proc. Soc. Photo-Opt. Instrum. Eng. (2)

M. Takenaga et al., “New Optical Erasable Medium Using TeOx Thin Films,” Proc. Soc. Photo-Opt. Instrum. Eng. 369, 181 (1983).

N. Koshino, M. Maeda, Y. Goto, K. Itoh, S. Ogawa, “Selenium Alloy Film for New Erasable Optical Disk Media,” Proc. Soc. Photo-Opt. Instrum. Eng. 529, 40 (1985).

Other (3)

See, e.g., J. W. Christian, “Phase Transformations,” in Physical Metallurgy, R. W. Cahn, Ed. (North-Holland, Amsterdam, 1970), pp. 479–486.

J. Schneider, Conservatoire des Arts et Metiers, Paris, France; private communication.

H. van Tongeren, M. Sens, “Write-Once Phase Change Recording in GaSb,” in Technical Digest of Topical Meeting on Optical Data Storage (Optical Society of America, Washington, DC, 1987), pp. 50–53.

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Figures (4)

Fig. 1
Fig. 1

Calculated temperature dépende nee of the crystallization of written amorphous spots in Te. The lower curve is for 1-μm growth from crystallites at the edges, the higher curve is calculated for homogeneous nucleation followed by 3-D growth.

Fig. 2
Fig. 2

CNR in 10-kHz bandwidth as a function of energy for a 100-nm thick crystallized InSbTe alloy layer. The recording wavelength was 752 nm and N.A. = 0.50. Pulse duration is 60 ns, pulse frequency is 750 kHz, and the linear velocity is 1.4 m/s. Precrystallization was done by increasing the read power to 4.2 mW during one revolution.

Fig. 3
Fig. 3

CNR remaining after erasure during one revolution with the circular write beam as a function of the erase power. Write energy was 0.6 nJ with a pulse duration of 60 ns. The other experimental conditions were identical to those in Fig. 2.

Fig. 4
Fig. 4

Eye pattern for an EFM-type code observed in a 100-nm thick InSbTe alloy layer at 1.2 m/s. Precrystallization was done by increasing the read power to 4.2 mW during one revolution.

Equations (2)

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Δ G = Δ H m T Δ S m Δ H m ( 1 T / T m ) ,
u = f s k T 3 π a 0 2 η { 1 exp [ Δ H m k T ( 1 T / T m ) ] } ,

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