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  1. K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
    [CrossRef]
  2. H. Kawaguchi, “Optical Input and Output Characteristics for Bistable Semiconductor Laser,” Appl. Phys. Lett. 41(8), (15Oct.1982).
    [CrossRef]
  3. N. Ogasawara, R. Ito, “Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifier,” Jpn. J. Appl. Phys. 25, L739 (1986).
    [CrossRef]
  4. Y. Mori, J. Shibata, T. Kajiwara, “Polarization-Resolved Output Characteristics of Optical Polarization Bistability in a Semiconductor Laser,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1987), paper MB5.
  5. T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
    [CrossRef]
  6. T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

1987 (1)

T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
[CrossRef]

1986 (2)

T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

N. Ogasawara, R. Ito, “Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifier,” Jpn. J. Appl. Phys. 25, L739 (1986).
[CrossRef]

1982 (2)

K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
[CrossRef]

H. Kawaguchi, “Optical Input and Output Characteristics for Bistable Semiconductor Laser,” Appl. Phys. Lett. 41(8), (15Oct.1982).
[CrossRef]

Harder, X. X.

K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
[CrossRef]

Inoue, K.

T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
[CrossRef]

Ito, R.

N. Ogasawara, R. Ito, “Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifier,” Jpn. J. Appl. Phys. 25, L739 (1986).
[CrossRef]

Kajiwara, T.

Y. Mori, J. Shibata, T. Kajiwara, “Polarization-Resolved Output Characteristics of Optical Polarization Bistability in a Semiconductor Laser,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1987), paper MB5.

Kawaguchi, H.

H. Kawaguchi, “Optical Input and Output Characteristics for Bistable Semiconductor Laser,” Appl. Phys. Lett. 41(8), (15Oct.1982).
[CrossRef]

Lau, K. Y.

K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
[CrossRef]

Mikami, O.

T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

Mori, Y.

Y. Mori, J. Shibata, T. Kajiwara, “Polarization-Resolved Output Characteristics of Optical Polarization Bistability in a Semiconductor Laser,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1987), paper MB5.

Mukai, T.

T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
[CrossRef]

T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

Ogasawara, N.

N. Ogasawara, R. Ito, “Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifier,” Jpn. J. Appl. Phys. 25, L739 (1986).
[CrossRef]

Saitoh, T.

T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
[CrossRef]

T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

Shibata, J.

Y. Mori, J. Shibata, T. Kajiwara, “Polarization-Resolved Output Characteristics of Optical Polarization Bistability in a Semiconductor Laser,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1987), paper MB5.

Yariv, A.

K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
[CrossRef]

Appl. Phys. Lett. (3)

K. Y. Lau, X. X. Harder, A. Yariv, “Dynamical Switching Characteristics of a Bistable Injection Laser,” Appl. Phys. Lett. 40(3), (1Feb.1982).
[CrossRef]

H. Kawaguchi, “Optical Input and Output Characteristics for Bistable Semiconductor Laser,” Appl. Phys. Lett. 41(8), (15Oct.1982).
[CrossRef]

T. Mukai, K. Inoue, T. Saitoh, “Homogeneous Gain Saturation in 1.5 μm InGaAsP Traveling-Wave Semiconductor Laser Amplifier,” Appl. Phys. Lett. 51(6), 10 (Aug.1987).
[CrossRef]

Jpn. J. Appl. Phys. (1)

N. Ogasawara, R. Ito, “Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifier,” Jpn. J. Appl. Phys. 25, L739 (1986).
[CrossRef]

Trans. IECE Jpn. (1)

T. Mukai, T. Saitoh, O. Mikami, “1.5 μm InGaAsP Fabry-Perot Cavity Type Semiconductor Laser Amplifier,” Trans. IECE Jpn. J69-C, No. 4, 421 (1986) (in Japanese).

Other (1)

Y. Mori, J. Shibata, T. Kajiwara, “Polarization-Resolved Output Characteristics of Optical Polarization Bistability in a Semiconductor Laser,” in Technical Digest, Conference on Lasers and Electro-Optics (Optical Society of America, Washington, DC, 1987), paper MB5.

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Figures (4)

Fig. 1
Fig. 1

Controlled signal gain by control light for input signal light powers. Upper curve represents the signal gain without control light. Lower curve represents the signal gain with −20 dBm of control light.

Fig. 2
Fig. 2

Experimental setup. A lock-in-amplifier and a chopper were used in the input–output characteristics measurement. The signal output was detected by a Ge photodiode. A sampling oscilloscope and a pattern generator were used in the high-speed inverter switching experiment. The switched signal and/or modulated control output was detected by a Ge avalanche photodiode followed by an electrical amplifier with dc to a 3-GHz bandwidth. The control input was previously observed without the SLA.

Fig. 3
Fig. 3

Input–output characteristics for signal light. Solid curves represent the calculation results. Circles and triangles represent the experimental data with −30 and −20 dBm of input control power, respectively.

Fig. 4
Fig. 4

High-speed inverter switching experiment. Upper trace represents the previous observation of control input. Middle and lower traces represent control and signal outputs. Control light was modulated with an 800-Mbit/s pulse pattern of (1 0 0 0 1 0 1 0).

Equations (1)

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g = g 0 / ( 1 + I / I s ) ,

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