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  1. P. J. Martin, R. P. Netterfield, “Optical Films Produced by Ion-Based Processes,” Prog. Opt. 23, Chap. 3 (1986).
    [CrossRef]
  2. K.-H. Muller, “Monte Carlo Calculation for Structural Modifications in Ion-Assisted Thin Films Deposition Due to Thermal Spikes,” J. Vac. Sci. Technol. A 4, 184 (1986).
    [CrossRef]
  3. K.-H. Muller, “Model for Ion-Assisted Thin Films Densification,” J. Appl. Phys. 59, 2803 (1986).
    [CrossRef]
  4. J. D. Targove, J. P. Lehan, L. J. Lingg, H. A. Macleod, J. A. Leavitt, L. C. Mclntyre, “Ion-Assisted Deposition of Lanthanum Fluoride Thin Films,” Appl. Opt. 26, 3733 (1987).
    [CrossRef] [PubMed]
  5. J. D. Targove, L. J. Lingg, J. P. Lehan, H. A. Macleod, “Effect of Oxygen Incorporation on the Structure of Ion-Beam-Assisted LaF3 Thin Films,” Appl. Opt. 27, 213 (1988).
    [CrossRef] [PubMed]
  6. J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
    [CrossRef]
  7. H. A. Macleod, “Structure-Related Optical Properties of Thin Films,” J. Vac. Sci. Technol. A 4, 418 (1986).
    [CrossRef]
  8. S. Ogura, “Some Features of the Behaviour of Optical Thin Films,” Ph.D. Thesis, Newcastle on Tyne Polytechnic (1975).
  9. F. Seitz, J. S. Koehler, “Displacement of Atoms during Irradiation,” Solid State Phys. 2, 307 (1956).
  10. K. Kinosita, M. Nishibori, “Porosity of MgF2 Films—Evaluation Based on Changes in Refractive Index due to Adsorption of Vapors,” J. Vac. Sci. Technol. 6, 730 (1969).
    [CrossRef]

1988 (1)

1987 (1)

1986 (4)

H. A. Macleod, “Structure-Related Optical Properties of Thin Films,” J. Vac. Sci. Technol. A 4, 418 (1986).
[CrossRef]

P. J. Martin, R. P. Netterfield, “Optical Films Produced by Ion-Based Processes,” Prog. Opt. 23, Chap. 3 (1986).
[CrossRef]

K.-H. Muller, “Monte Carlo Calculation for Structural Modifications in Ion-Assisted Thin Films Deposition Due to Thermal Spikes,” J. Vac. Sci. Technol. A 4, 184 (1986).
[CrossRef]

K.-H. Muller, “Model for Ion-Assisted Thin Films Densification,” J. Appl. Phys. 59, 2803 (1986).
[CrossRef]

1976 (1)

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
[CrossRef]

1969 (1)

K. Kinosita, M. Nishibori, “Porosity of MgF2 Films—Evaluation Based on Changes in Refractive Index due to Adsorption of Vapors,” J. Vac. Sci. Technol. 6, 730 (1969).
[CrossRef]

1956 (1)

F. Seitz, J. S. Koehler, “Displacement of Atoms during Irradiation,” Solid State Phys. 2, 307 (1956).

Fillard, J. P.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
[CrossRef]

Gasiot, J.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
[CrossRef]

Kinosita, K.

K. Kinosita, M. Nishibori, “Porosity of MgF2 Films—Evaluation Based on Changes in Refractive Index due to Adsorption of Vapors,” J. Vac. Sci. Technol. 6, 730 (1969).
[CrossRef]

Koehler, J. S.

F. Seitz, J. S. Koehler, “Displacement of Atoms during Irradiation,” Solid State Phys. 2, 307 (1956).

Leavitt, J. A.

Lehan, J. P.

Lingg, L. J.

Macleod, H. A.

Manifacier, J. C.

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
[CrossRef]

Martin, P. J.

P. J. Martin, R. P. Netterfield, “Optical Films Produced by Ion-Based Processes,” Prog. Opt. 23, Chap. 3 (1986).
[CrossRef]

Mclntyre, L. C.

Muller, K.-H.

K.-H. Muller, “Model for Ion-Assisted Thin Films Densification,” J. Appl. Phys. 59, 2803 (1986).
[CrossRef]

K.-H. Muller, “Monte Carlo Calculation for Structural Modifications in Ion-Assisted Thin Films Deposition Due to Thermal Spikes,” J. Vac. Sci. Technol. A 4, 184 (1986).
[CrossRef]

Netterfield, R. P.

P. J. Martin, R. P. Netterfield, “Optical Films Produced by Ion-Based Processes,” Prog. Opt. 23, Chap. 3 (1986).
[CrossRef]

Nishibori, M.

K. Kinosita, M. Nishibori, “Porosity of MgF2 Films—Evaluation Based on Changes in Refractive Index due to Adsorption of Vapors,” J. Vac. Sci. Technol. 6, 730 (1969).
[CrossRef]

Ogura, S.

S. Ogura, “Some Features of the Behaviour of Optical Thin Films,” Ph.D. Thesis, Newcastle on Tyne Polytechnic (1975).

Seitz, F.

F. Seitz, J. S. Koehler, “Displacement of Atoms during Irradiation,” Solid State Phys. 2, 307 (1956).

Targove, J. D.

Appl. Opt. (2)

J. Appl. Phys. (1)

K.-H. Muller, “Model for Ion-Assisted Thin Films Densification,” J. Appl. Phys. 59, 2803 (1986).
[CrossRef]

J. Phys. E (1)

J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n,k and the Thickness of a Weakly Absorbing Thin Film,” J. Phys. E 9, 1002 (1976).
[CrossRef]

J. Vac. Sci. Technol. (1)

K. Kinosita, M. Nishibori, “Porosity of MgF2 Films—Evaluation Based on Changes in Refractive Index due to Adsorption of Vapors,” J. Vac. Sci. Technol. 6, 730 (1969).
[CrossRef]

J. Vac. Sci. Technol. A (2)

K.-H. Muller, “Monte Carlo Calculation for Structural Modifications in Ion-Assisted Thin Films Deposition Due to Thermal Spikes,” J. Vac. Sci. Technol. A 4, 184 (1986).
[CrossRef]

H. A. Macleod, “Structure-Related Optical Properties of Thin Films,” J. Vac. Sci. Technol. A 4, 418 (1986).
[CrossRef]

Prog. Opt. (1)

P. J. Martin, R. P. Netterfield, “Optical Films Produced by Ion-Based Processes,” Prog. Opt. 23, Chap. 3 (1986).
[CrossRef]

Solid State Phys. (1)

F. Seitz, J. S. Koehler, “Displacement of Atoms during Irradiation,” Solid State Phys. 2, 307 (1956).

Other (1)

S. Ogura, “Some Features of the Behaviour of Optical Thin Films,” Ph.D. Thesis, Newcastle on Tyne Polytechnic (1975).

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Figures (3)

Fig. 1
Fig. 1

Refractive index at 350 nm of LaF3 films bombarded with neon, argon, and krypton ions as a function of ion current density.

Fig. 2
Fig. 2

Refractive index of LaF3 thin films bombarded with 60 μA/cm2 of 500-eV neon, argon, or krypton ions.

Fig. 3
Fig. 3

Refractive index at 350 nm of LaF3 films bombarded with neon, argon, and krypton ions as a function of the total momentum transfer rate ptot in units of (μA/cm2)(amu · eV)1/2.

Tables (1)

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Table I Deposition Parameters and Refractive Indices for IAD LaF3 Films

Equations (5)

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p max = 2 m γ E ,
γ = 4 m M ( m + M ) 2 .
γ x = 0.25 ( γ x - La + 3 γ x - F ) ,
p tot = p max J = J 2 m γ E ,
n = n [ P ( p tot ) ] p tot .

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