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  1. W. J. Choyke, W. D. Partlow, E. P. Supertzi, F. J. Venskytis, G. B. Brandt, “Silicon-Carbide Diffraction Grating for the Vacuum Ultraviolet: Feasibility,” Appl. Opt. 16, 2013 (1977).
    [CrossRef] [PubMed]
  2. W. D. Partlow, H. Herzig, “Influence of Plasma Excitation Frequency on the Properties of a-SiC:H Produced in a Glow Discharge Plasma,” in Proceedings, MRS Conference, Symposium F: Materials Issues in Applications of Amorphous Silicon Technology, San Francisco (1985).
  3. W. D. Partlow, “Develop Techniques for Applying Silicon Carbide Coatings,” Final Report, NASA contract NAS5-27679.
  4. D. L. Windt, B. Bach, “Ion Beam Deposited Silicon Carbide on Glass Optics and Replica Gratings,” Appl. Opt. 23, 3047 (1984).
    [CrossRef] [PubMed]
  5. J. B. Kortright, D. L. Windt, “Amorphous Silicon Carbide Coatings for Extreme Ultraviolet Optics,” Appl. Opt. 27, 2841 (1988).
    [CrossRef] [PubMed]
  6. A. P. Bradford, G. Hass, J. F. Osantowski, A. R. Toft, “Preparation of Mirror Coatings for the Vacuum Ultraviolet in the 2-m Evaporator,” Appl. Opt. 8, 1183 (1969).
    [CrossRef] [PubMed]
  7. J. F. Osantowski, “Reflectance and Optical Constants for Cer-Vit from 250 to 1050 Å,” J. Opt. Soc. Am. 64, 834 (1974).
    [CrossRef]

1988 (1)

1984 (1)

1977 (1)

1974 (1)

1969 (1)

Bach, B.

Bradford, A. P.

Brandt, G. B.

Choyke, W. J.

Hass, G.

Herzig, H.

W. D. Partlow, H. Herzig, “Influence of Plasma Excitation Frequency on the Properties of a-SiC:H Produced in a Glow Discharge Plasma,” in Proceedings, MRS Conference, Symposium F: Materials Issues in Applications of Amorphous Silicon Technology, San Francisco (1985).

Kortright, J. B.

Osantowski, J. F.

Partlow, W. D.

W. J. Choyke, W. D. Partlow, E. P. Supertzi, F. J. Venskytis, G. B. Brandt, “Silicon-Carbide Diffraction Grating for the Vacuum Ultraviolet: Feasibility,” Appl. Opt. 16, 2013 (1977).
[CrossRef] [PubMed]

W. D. Partlow, “Develop Techniques for Applying Silicon Carbide Coatings,” Final Report, NASA contract NAS5-27679.

W. D. Partlow, H. Herzig, “Influence of Plasma Excitation Frequency on the Properties of a-SiC:H Produced in a Glow Discharge Plasma,” in Proceedings, MRS Conference, Symposium F: Materials Issues in Applications of Amorphous Silicon Technology, San Francisco (1985).

Supertzi, E. P.

Toft, A. R.

Venskytis, F. J.

Windt, D. L.

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Figures (1)

Fig. 1
Fig. 1

Measured normal incidence reflectance of ion beam deposited SiC, ●. The measured reflectance for polished CVD SiC, ▲, and measured reflectance for Si, ■, are shown for comparison.

Tables (1)

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Table I Normal Incidence Reflectance of Ion Beam Deposited SiC Films

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