Abstract
The distribution of optical signals to a monolithic array of GaAs photoconductors by means of ion-exchanged glass optical waveguides is demonstrated. In this hybrid technique both optical and electronic interconnections of semiconductor elements are achieved through the use of a metallic interconnect layer deposited on the surface of a glass substrate which has a mating waveguide pattern. The low optical loss, ease of fabrication, and low material cost of diffused glass waveguides with such layers permit relatively large optoelectronic circuit boards to be made, in which numerous semiconductor active optoelectronic devices can be included. The device reported here serves as the signal distribution and cross-point switching section of an optoelectronic switch matrix.
© 1987 Optical Society of America
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