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Detection of traces in semiconductor materials by two-color laser-enhanced ionization spectroscopy in flames

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Abstract

In this paper we demonstrate that two-color laser-enhanced ionization (LEI) spectroscopy in flames can be used for detecting impurities at a sub-ppm level in GaAs. Six elements were investigated (Co,Cr,Fe,In,Mn,Ni), and the content could be determined for three of them (Cr,Fe,Ni), while only an upper limit below ppm could be given for the other three. The analysis was performed on the bulk material which was dissolved in acid and further diluted. In the diluted solution, the detection limits were of the same order as in pure water solutions. Spectral interferences have been corrected for by using a background correction method, which is performed without scanning the lasers. Furthermore, we discuss the applicability of LEI in flame and graphite furnace to samples with various impurity elements, matrices, and total amounts of sample available for analysis.

© 1987 Optical Society of America

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