Abstract

A nonlinear electroabsorption cell that has possible practical applications in the development of artificial neural networks is described. The properties of the cell are based on cross modulation of light in semi-insulating GaAs in the presence of an electric field. The electroabsorption cell has memory capability and similar nonlinear input–output characteristics to the neuron. The cell can be incorporated in an artificial neural network consisting of parallel interconnects and feedback.

© 1987 Optical Society of America

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