Abstract

We have developed an optical integrated circuit waveguide technology based on conventional Si processing. We demonstrate waveguide losses of <0.3 dB/cm in the 1.3–1.6-μm wavelength range. We use a high refractive-index core of Si3N4 surrounded by SiO2 cladding layers, which provides a highly confined optical mode adequate for butt coupling to channel substrate buried heterostructure lasers. We report the first IR transmission experiments in these waveguides and find two absorption peaks associated with H in SiO2 and Si3N4 layers at 1.40 and 1.52 μm, respectively. The peak absorptions are 2.2 and 1.2 dB/cm, respectively, and these peaks can be largely removed by annealing at 1100–1200°C.

© 1987 Optical Society of America

Full Article  |  PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Figures (7)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription