Abstract

We have developed an optical integrated circuit waveguide technology based on conventional Si processing. We demonstrate waveguide losses of <0.3 dB/cm in the 1.3–1.6-μm wavelength range. We use a high refractive-index core of Si3N4 surrounded by SiO2 cladding layers, which provides a highly confined optical mode adequate for butt coupling to channel substrate buried heterostructure lasers. We report the first IR transmission experiments in these waveguides and find two absorption peaks associated with H in SiO2 and Si3N4 layers at 1.40 and 1.52 μm, respectively. The peak absorptions are 2.2 and 1.2 dB/cm, respectively, and these peaks can be largely removed by annealing at 1100–1200°C.

© 1987 Optical Society of America

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