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  1. M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).
  2. M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).
  3. E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

1982 (2)

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

1981 (1)

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

Becker, M. F.

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

Bordelon, M.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

Jhee, Y. K.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

Sheng, D. Y.

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

Soileau, M.

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

Van Stryland, E.

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

Walser, R. M.

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

Williams, W.

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

Woodall, M.

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

Fourteenth Annual Symposium: Optical Materials for High Power Lasers (1)

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon During Multi-Pulse Laser Induced Damage,” in Fourteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 699 (1982).

Proc. Soc. Photo-Opt. Instrum. (1)

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces, Picosecond Lasers and Applications,” Proc. Soc. Photo-Opt. Instrum. 322, 93 (1982).

Thirteenth Annual Symposium: Optical Materials for High Power Lasers (1)

E. Van Stryland, M. Woodall, W. Williams, M. Soileau, “Two and Three-Photon Absorption in Semiconductors with Subsequent Absorption by Photogenerated Carriers,” in Thirteenth Annual Symposium: Optical Materials for High Power Lasers, Natl. Bur. Stand. U.S. Spec. Publ. 638 (1981).

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Figures (3)

Fig. 1
Fig. 1

Typical charge emission signal from copper.

Fig. 2
Fig. 2

Inverse of the transmission vs incident fluence for Si.

Fig. 3
Fig. 3

Negative charge emission vs fluence for copper.

Tables (1)

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Table I Single-Pulse Damage Threshold for all the Samples which were Tested

Equations (1)

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1 T = e α L ( 1 R ) 2 { 1 + β [ ( 1 R ) ( 1 exp α L ) ] α I 0 } .

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