Optical properties of aluminum oxynitrides deposited by laser-assisted CVD

Hulya Demiryont; L. R. Thompson; G. J. Collins

doi:10.1364/AO.25.001311

Applied Optics
Vol. 25,
Issue 8,
pp. 1311-1318
(1986)
•https://doi.org/10.1364/AO.25.001311

Optical properties of aluminum oxynitrides deposited by laser-assisted CVD

Hulya Demiryont, L. R. Thompson, and G. J. Collins

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Hulya Demiryont, L. R. Thompson, and G. J. Collins, "Optical properties of aluminum oxynitrides deposited by laser-assisted CVD," Appl. Opt. 25, 1311-1318 (1986)

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Abstract

Composition-dependent optical properties of (Al₂O₃)₁₋_c−(AlN)_c films deposited by the laser-assisted chemical vapor deposition (L-CVD) technique are investigated. Three distinct substrate temperature regions give rise to three distinct film compositions from A1₂O₃, through oxynitride composites, and ultimately to A1N. Optical parameters of the films deposited on fused quartz substrates are deduced from spectrophotometric transmittance characteristics in the spectral region ranging from 0.18 to 3.5 μm. The optical energy gap of the films is determined from optical absorption spectra. Fourier transfer infrared spectra (4400–400 cm⁻¹) are used to characterize the chemical composition of the films.

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Feedstock gases	Trimethyl aluminum (TMAl) Ammonia (NH₃)
Laser	Excimer laser operating at ArF^x transition (193 nm)
Laser	Avg absorbed power, 0.5 W
Pressure	Background ∼10⁻⁶ Torr
Pressure	Working: 3.0 Torr
NH₃/TMAl flow rate ratio	50/0.01
Substrates	Fused quartz, Corning 7059 glass Si wafers
Substrate temperature	∼30–500°C

Label	T_s (°C)	n (0.4 μm < λ)	c
128	100	1.666	0
127	150	1.700	0.07
125	200	1.774	0.24
119	250	1.756	0.20
126	300	1.808	0.32
146	300	1.725	0.13
114	350	1.842	0.40
106	400	1.968	0.67
107	400	1.916	0.55
108	400	1.848	0.40
116	420	1.950	0.66
137	450	1.998	0.785
133	450	2.08	1.0
129	475	2.08	1.0
113	490	2.07	1.0

Material	Ref.active index λ = 0.3 μm	Energy gap and impurity gap states	Remarks	References
Al₂O₃	1.666	E_g = 6.7 eV	L-CVD T_s = 100°C	This study
		E_im = 5.1 eV
	1.67		e beam T_s = 40°C	26
	1.67		e beam T_s = 300°C	26
	1.55		Anodic oxidation	18
AlN	2.08	E_g = 6.0 eV	L-CVD T_s = 450°C	This study
		E_im = 4.6 eV		5
	2.16	E_g = 5.9−4.8 eV	sc; E_g decreases with increasing nitrogen
		E_im = 2.8 eV
	1.99	5.9 eV	pc, pyrolysis	5
			T_s = 800–1100°C

Observed peak locations		Substrate temperature dependence of peak intensities	Identification	Literature values (in cm⁻¹)	References
in (cm⁻¹)	in (μm)	Substrate temperature dependence of peak intensities	Identification	Literature values (in cm⁻¹)	References
∼3450	2.9	Decreases with increasing T_s	${(OH)}_{x}^{- 1}$	∼3450	39
∼1640	6.1	Decreases with increasing T_s	${(OH)}_{x}^{- 1}$	∼1640	39
460	21.78	Peak intensity decreases with increasing T_s	Al₂O₃ molecules	459	37,38
∼1180	8.45	Becomes dominant with increasing T_s	AlN molecules	1183	39
680	14.7			1057	39
				714	39
				700	37
				675	40

Feedstock gases	Trimethyl aluminum (TMAl) Ammonia (NH₃)
Laser	Excimer laser operating at ArF^x transition (193 nm)
Laser	Avg absorbed power, 0.5 W
Pressure	Background ∼10⁻⁶ Torr
Pressure	Working: 3.0 Torr
NH₃/TMAl flow rate ratio	50/0.01
Substrates	Fused quartz, Corning 7059 glass Si wafers
Substrate temperature	∼30–500°C

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Applied Optics