Abstract

This study focused on the multipulse laser damage and the subdamage threshold ion emission of GaAs. The initial goals were to determine the pulse-dependent damage threshold and to correlate ion emission with surface damage. A Q-switched Nd:YAG laser was used to irradiate the 〈100〉 GaAs samples. Using values of N from 1 to 100, we obtained accumulation curves based on 50% damage probability. Corresponding damage threshold fluences were 0.4–0.8 J/cm2 for N > 1 and 1.5 J/cm2 for N = 1. We observed large site-to-site fluctuations in ion emission and found the onset of emission at 0.2 J/cm2 for all cases. Once surface damage occurred, ion emission increased greatly. The observed behavior supports a surface cleaning model for the ion emission which precedes surface damage. Measurements of linear and nonlinear free carrier absorption were made, but no anomalous absorption was observed.

© 1986 Optical Society of America

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References

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  1. H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967).
    [CrossRef]
  2. M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
    [CrossRef]
  3. S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.
  4. S. R. Foltyn, “Spotsize Effects in Laser Damage Testing,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).
  5. C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
    [CrossRef]
  6. A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).
  7. J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
    [CrossRef]
  8. J. L. Smith, “Surface Damage of GaAs from 0.694 and 1.06 mm Laser Radiation,” J. Appl. Phys. 43, 3399 (1972).
    [CrossRef]
  9. P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982).
    [CrossRef]
  10. E. W. Van Stryland, M. A. Woodall, H. Vanherzeele, M. J. Soileau, “Energy Band-Gap Dependence of Two-Photon Absorption,” Opt. Lett. 10, 490 (1985).
    [CrossRef] [PubMed]
  11. T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
    [CrossRef]
  12. R. K. Willardson, A. C. Beer, Semiconductors and Semimetals: Optical Properties of III-V Compounds, Vol. 3, (Academic, New York, 1967), p. 409.
  13. D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
    [CrossRef]
  14. A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).
  15. K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.
  16. J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981).
    [CrossRef]
  17. D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

1986 (1)

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

1985 (1)

1984 (1)

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

1983 (4)

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

S. R. Foltyn, “Spotsize Effects in Laser Damage Testing,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
[CrossRef]

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

1982 (1)

P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982).
[CrossRef]

1981 (1)

J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981).
[CrossRef]

1980 (1)

J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
[CrossRef]

1972 (1)

J. L. Smith, “Surface Damage of GaAs from 0.694 and 1.06 mm Laser Radiation,” J. Appl. Phys. 43, 3399 (1972).
[CrossRef]

1969 (1)

A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).

1967 (1)

H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967).
[CrossRef]

Bartoli, F. J.

J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
[CrossRef]

Bass, M.

C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
[CrossRef]

Baumgart, H.

K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.

Becker, M. F.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

Beer, A. C.

R. K. Willardson, A. C. Beer, Semiconductors and Semimetals: Optical Properties of III-V Compounds, Vol. 3, (Academic, New York, 1967), p. 409.

Boggess, T. F.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Bohnert, K. M.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Bordelon, M.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

Boyd, I. W.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Chemla, D. S.

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

Compaan, A. D.

J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981).
[CrossRef]

Crosthwait, D. L.

D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

Dannefaer, S.

S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.

Fauchet, P. M.

P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982).
[CrossRef]

Foltyn, S. R.

S. R. Foltyn, “Spotsize Effects in Laser Damage Testing,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Gossard, A. C.

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

Grasyuk, A. Z.

A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).

Hogg, B.

S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.

Jhee, Y. K.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

Kerr, D.

S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.

Kim, D. M.

D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

Koumvakalis, N.

C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
[CrossRef]

Kressel, H.

H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967).
[CrossRef]

Kruer, M. R.

J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
[CrossRef]

Lee, C. S.

C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
[CrossRef]

Manenkov, A. A.

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Mansour, K.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Matyushin, G. A.

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Merkle, K. L.

K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.

Meyer, J. R.

J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
[CrossRef]

Mierop, H.

H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967).
[CrossRef]

Miller, D. A. B.

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

Moss, S. C.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Nechitailo, V. S.

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Phillipp, F.

K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.

Prokhorov, A. M.

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Shah, R. R.

D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

Siegman, A. E.

P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982).
[CrossRef]

Smirl, A. L.

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

Smith, J. L.

J. L. Smith, “Surface Damage of GaAs from 0.694 and 1.06 mm Laser Radiation,” J. Appl. Phys. 43, 3399 (1972).
[CrossRef]

Smith, P. W.

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

Soileau, M. J.

Tsaprilov, A. S.

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

Uebbing, R. H.

K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.

Van Stryland, E. W.

van Vechten, J. A.

J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981).
[CrossRef]

Vanherzeele, H.

Von der Linde, D.

D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

Walser, R. M.

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

Wiegmann, W.

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

Willardson, R. K.

R. K. Willardson, A. C. Beer, Semiconductors and Semimetals: Optical Properties of III-V Compounds, Vol. 3, (Academic, New York, 1967), p. 409.

Woodall, M. A.

Zubarev, I. G.

A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).

Appl. Phys. Lett. (1)

P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982).
[CrossRef]

Fourteenth ASTM Laser Damage Symposium (3)

A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985).
[CrossRef]

S. R. Foltyn, “Spotsize Effects in Laser Damage Testing,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).

IEEE J. Quantum Electron. (1)

T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986).
[CrossRef]

IEEE J. Quantum. Electron. (1)

D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984).
[CrossRef]

J. Appl. Phys. (4)

H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967).
[CrossRef]

C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983).
[CrossRef]

J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980).
[CrossRef]

J. L. Smith, “Surface Damage of GaAs from 0.694 and 1.06 mm Laser Radiation,” J. Appl. Phys. 43, 3399 (1972).
[CrossRef]

Opt. Lett. (1)

Solid State Commun. (1)

J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981).
[CrossRef]

Sov. Phys. Semicond. (1)

A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).

Other (4)

K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.

R. K. Willardson, A. C. Beer, Semiconductors and Semimetals: Optical Properties of III-V Compounds, Vol. 3, (Academic, New York, 1967), p. 409.

D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.

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Figures (10)

Fig. 1
Fig. 1

Experimental setup.

Fig. 2
Fig. 2

Charged particle emission vs position on wafer for a constant laser fluence of 0.63 J/cm2.

Fig. 3
Fig. 3

Damage and emission probabilities vs fluence for N = 1.

Fig. 4
Fig. 4

Damage and emission probabilities vs fluence for N = 10.

Fig. 5
Fig. 5

Damage and emission probabilities vs fluence for N = 100.

Fig. 6
Fig. 6

Number of pulses required to reach 50% damage probability vs fluence. The line was hand drawn to aid the viewer.

Fig. 7
Fig. 7

Pulse-by-pulse charged particle emission for N = 30 at an average fluence of 0.46 J/cm2.

Fig. 8
Fig. 8

SEM micrograph of damage due to three pulses at an average fluence of 0.51 J/cm2.

Fig. 9
Fig. 9

SEM micrograph of damage due to thirty pulses at an average fluence of 0.38 J/cm2.

Fig. 10
Fig. 10

Inverse transmission vs intensity for a GaAs wafer polished on both sides. The solid line represents a least-squares linear fit to the data.

Tables (1)

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Table I Onset of Charge Emission and 50% Damage Threshold Fluence for N-on-1 Experiments

Equations (8)

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T 0 = ( 1 - R ) 2 exp ( - α 0 L ) ,
d N / d t = α 0 I / h f + β 0 I 2 / 2 h f - N / t c ,
d I / d z = - α 0 I - β 0 I 2 - σ N I ,
N = t c α 0 I / h f .
I < I c = h f σ t c 1 ( 1 - R ) [ 1 - exp ( - α 0 L ) ] .
T - 1 = [ ( 1 - R ) 2 exp ( - α 0 L ) ] - 1 + ln 2 2 π ( σ t c ) [ 1 - exp ( - α 0 L ) ] h f ( 1 - R ) [ exp ( - α 0 L ) ] ( E π w 0 2 t p ) ,
Δ T = ( d I / d x ) surf t p / C v ρ ,
Δ T = [ α 0 + ( 1 - R ) σ t c α 0 I 0 / h f ] ( 1 - R ) I 0 t p / C v ρ ,

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